• 한국전기전자재료학회논문지
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• 제34권5호
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• pp.314-320
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• 2021

Controlling ambient humid condition through high performance humidity sensors has become important for various fields, including industrial process, food storage, and the preservation of historic remains. Although aerosol deposited humidity sensors using ceramic BaTiO₃ (BT) material have been widely studied because of their longtime stability, there remain critical disadvantages, such as low sensitivity, low linearity, and slow response/recovery time in case of the sensors fabricated at room temperature. To achieve superior humidity sensing properties even at room temperature condition, BT-Cu composite films utilizing aerosol deposition (AD) process have been proposed based on the percolation theory. The BT-Cu composite films showed gradually improved sensing properties until the Cu concentration reached 15 wt% in the composite film. However, the excessive Cu (above 30 wt%) containing BT-Cu composite films showed a rapid decrease of the sensing properties. The results of observed surface morphology of the AD fabricated composite films, to figure out the metal filler effect, showed correlation between surface topography as well as size and the amount of open pores according to the metal filler content. Overall, it is very important not only dielectric constant of the humidity sensing films but also microstructures, because they affect either the variation range of capacitance by ambient humidity or adsorption/desorption of ambient humidity onto/from the humidity sensing films.

• 한국응용과학기술학회지
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• 제21권1호
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• pp.89-96
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• 2004

The effect of La promoter on the carbon deposition and catalytic activity in the synthesis gas production with supported Ni catalysts was investigated. Active component was Ni and support was $CeO_2$ and the promoter used was La. The reaction was carried out in a fixed bed reactor at 1 atm and $650{\sim}800^{\circ}C$. The catalysts were prepared by two methods, the impregnation method and urea method. The catalysts prepared by the urea method showed 10 times higher surface area than those of prepared by the impregnation method. By the introduction of La promoter in the catalyst system, carbon deposition was remarkably reduced from 16% to 2%. It appears that the promoter facilitates the formation of a stable fluoride-type phase, which reduces the carbon deposition. The best catalytic activity and CO and $H_2$ selectivities were obtained with 2.5wt% $Ni/Ce(La)O_x$ catalyst at $750^{\circ}C$, giving 90% methane conversion, 93 and.80% of CO and $H_2$ selectivities, respectively.

• 한국재료학회지
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• 제22권8호
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• pp.409-415
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• 2012

$TiO_2$ thin films for high energy density capacitors were prepared by r.f. magnetron sputtering at room temperature. Flexible PET (Polyethylene terephtalate) substrate was used to maintain the structure of the commercial film capacitors. The effects of deposition pressure on the crystallization and electrical properties of $TiO_2$ films were investigated. The crystal structure of $TiO_2$ films deposited on PET substrate at room temperature was unrelated to deposition pressure and showed an amorphous structure unlike that of films on Si substrate. The grain size and surface roughness of films decreased with increasing deposition pressure due to the difference of mean free path. X-ray photoelectron spectroscopy (XPS) analysis revealed the formation of chemically stable $TiO_2$ films. The dielectric constant of $TiO_2$ films was significantly changed with deposition pressure. $TiO_2$ films deposited at low pressure showed high dissipation factor due to the surface microstructure. The dielectric constant and dissipation factor of films deposited at 70 mTorr were found to be 100~120 and 0.83 at 1 kHz, respectively. The temperature dependence of the capacitance of $TiO_2$ films showed the properties of class I ceramic capacitors. $TiO_2$ films deposited at 10~30 mTorr showed dielectric breakdown at applied voltage of 7 V. However, the films of 500~300 nm thickness deposited at 50 and 70 mTorr showed a leakage current of ${\sim}10^{-8}{\sim}10^{-9}$ A at 100 V.

• 한국산학기술학회논문지
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• 제9권4호
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• pp.892-898
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• 2008

3차원 쾌속 조형법은 컴퓨터에 저장되어있는 객체 데이터를 이용하여 시제품을 제작하는 기술로써, 기존의 나무나 클레이, 혹은 주조 제작방식과는 달리 원하는 위치에 요구되는 재료를 직접 적층함으로써 원형제품을 제작함을 특징으로 한다. 스테레오리쏘그래피, 용융 점착법, 선택적 레이저 소결법, 판상 제작법 등의 다양한 3차원 쾌속 조형법이 개발되었으나, 그 중에서 잉크젯을 통한 3차원 쾌속 조형법은 잉크화된 조형재료를 통해 구조적으로 기능이 가능한 원형제품의 제작이 가능하다는 특징이 있다. 그러나, 기능성 원형제품의 제작을 위해서는 잉크의 고농도화가 요구되며, 이로 인해 잉크 점도가 상승되어 젯팅 신뢰성이 저하되는 문제점이 있었다. 본 논문에서는 3차원 쾌속 조형법을 위한 최적 젯팅조건을 도출하기 위해 슬러리 타입 세라믹 상변화 잉크의 음파 전달속도 측정과 음파 전달속도가 젯팅에 미치는 영향을 고찰하도록 한다.

• 한국결정성장학회지
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• 제24권6호
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• pp.242-245
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• 2014

탄화규소의 화학기상증착 중에 두께 균일성을 향상시키기 위하여 평행하게 회전하는 3단 서셉터를 포함하는 CVD 장치에 대하여 전산유체역학(CFD) 시뮬레이션을 수행하였다. 실제 증착 실험에서는 단 간의 두께 균일성은 상당히 만족스러웠으나 같은 단 위에서는 위치에 따라 두께가 균일하지 못한 3C-SiC 상이 얻어지는 것을 확인하였다. 불균일의 원인으로는 서셉터의 회전 속도에 따른 영향으로 판단되었다. CFD 결과로부터 단 간의 균일성을 향상시키기 위해서는 120도 분기 노즐을 주입구에 설치하는 것이 바람직할 것으로 판단되었으며 단 내의 균일도 향상은 회전 속도를 줄임으로써 가능할 것으로 생각된다. 이렇게 제작된 탄화규소가 증착된 흑연 부품은 고경도, 내산화성 및 분진 억제 특성을 갖고 있어서 반도체용 부품으로 사용될 수 있다.

• 한국세라믹학회지
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• 제33권5호
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• pp.572-582
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• 1996

전류밀도, 70mA/cm2와 전류인가시간, 5초, 10초 조건의 양극반응으로 다공성 실리콘을 제작하여 800~110$0^{\circ}C$에서 열산화시킨 후 AI 전극을 증착시켜 만든 MOS(Metal Oxide Semiconductor) 구조의 C-V(Capacilance-Voltage) 특성을 조사하였다. 800, 90$0^{\circ}C$의 저온과 20~30분 이내의 단시간 산화에서는 산화막의 유전상수가 보통의 열산화막보다 크게 나타나고, 산화온도가 110$0^{\circ}C$의 고온과 60분 이상의 장시간 산화의 경우에는 3.9에 근접한 값을 갖는다. 이는 다공성 실리콘 산화막내에 존재하는 산화되지 않은 silicon들에 의한 효과와 표면적 증가에 의한 정전용량의 증가 효과가 복합적으로 작용하는 것이 그 원인이라 생각된다.

• 한국산학기술학회논문지
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• 제18권7호
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• pp.17-25
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• 2017

최근에 LED나 OLED와 같은 조명용 소자의 온도 상승에 따른 문제점을 개선하기 위하여 전기 도금 방법을 사용하여 제작한 두께가 두꺼운 금속 필름을 heat sink로 사용하고 있다. Cu 필름과 같은 두꺼운 금속 필름은 습식 방법인 전기 도금으로 제작하여 주로 소자의 방열판으로 사용되어 왔으나 건식의 증착 방법을 이용한 수 백 ${\mu}m$의 Cu 금속 필름에 대한 필요성이 요구되고 있다. 본 연구에서 설계 제작된 유도 가열 방식의 Cu 필름 증착 장비는 가열부가 세라믹 도가니 히터 부분과 세라믹 도가니 부분으로 분리된 이중 구조의 heating 방식을 채택하여 열 손실을 최소화 하고 보온 효과를 극대화시켰다. 또한 유도 가열 방식으로 초고속의 필름 증착 속도를 구현하였다. 그리고 열전도도가 높고 안정적인 두꺼운 Cu 필름 증착기술을 확보하고 최적화 하여 $1000{\AA}/s$의 증착율로 $100{\mu}m$의 필름을 증착 하였으며 ~2.0% 이내의 두께 균일도를 얻었다.

• The Korean Journal of Ceramics
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• 제6권2호
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• pp.129-133
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• 2000

Boron nitride films were synthesized with $N_2$ion flux of low energy, up to 100 eV, at different substrate temperatures of no heating, 200, 400, 500, and $800^{\circ}C$, respectively. Boron was supplied by e-beam evaporation at the rate of $1.5\AA$/sec. For all the conditions, hexagonal BN (h-BN) phase was mainly synthesized and high resolution transmission electron microscopy (HRTEM) showed that (002) planes of h-BN phase were aligned vertical to the Si substrate. The maximum alignment occurred around $400^{\circ}C$. In addition to major h-BN phase, transmission electron diffraction (TED) rings identified the formation of cubic BN (c-BN) phase. But HRTEM showed no distinct and continuous c-BN layer. These results suggest that c-BN phase may form in a scattered form even when h-BN phase is mainly synthesized under small momentum transfer by bombarding ions, which are not reconciled with the macro compressive stress model for the c-BN formation.

• 대한전기학회논문지:전기물성ㆍ응용부문C
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• 제54권9호
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• pp.397-402
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• 2005

The ($Sr_{1-x}Ca_x)TiO_3(SCT)$ thin films are deposited on Pt-coated electrode (Pt/TiN/SiO$_{2}$Si) using RF sputtering method with substitutional contents of Ca. The optimum conditions of RF power and Ar/O$_{2}$ ratio were 140(W) and 80/20, respectively. Deposition rate of SCT thin film was about $18.75{\AA}$/min. The dielectric constant was increased with increasing the substitutional contents of Ca, while it was decreased if the substitutional contents of Ca exceeded over $15[mol\%]$. The capacitance characteristics had a stable value within $\pm4[\%]$ in temperature ranges of $-80\~+90[^{\circ}C]$. All SCT thin films used in this study show the phenomena of dielectric relaxation with the increase of frequency, and the relaxation frequency is observed above 200[kHz].

• The Korean Journal of Ceramics
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• 제1권1호
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• pp.21-28
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• 1995

Electrical conductivity of $TiO_2$ thin films, deposited on $Al_2O_3$ substrates by metal organic chemical vapor deposition (MOCVD), was measured by four-point probe method in a temperature range from $800^{\circ}C$ to $1025^{\circ}C$ and an oxygen partial pressure range from $2.7{\times}10^{-5}$ atm to 1 atm. In the low oxygen partial pressure region n-type conduction was dominant, but in the high oxygen partial pressure region p-type conduction behavior appeared due to substitution of Ti ions by Al ions, which were diffused from the substrate during post deposition annealing process. Electrical conductivity of the film decreases in the n-type region and increases in the p-type region as the oxygen partial pressure increases. The transition points, which show the minimum conductivity, shifted to the higher oxygen partial pressure region as the measuring temperature increased, but it shifted to lower oxygen partial pressure region with an increase in the post annealing temperature. The results were also discussed with the possible defect models.