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Properties wRh Ca Substitutional Contents of $SrTiO_{3}$ Ceramic Thin Film  

Kim Jin-Sa (광운대 전기공학과)
Oh Yong-Cheol (광운대 전기공학과)
Cho Choon-Nam (광운대 전기공학과)
Shin Cheol-Gi (광운대 전기공학과)
Song Min-Jong (광주보건대학 의료정보공학과)
Choi Woon-Shik (대불대 전기공학과)
Park Min-Sun (광운대 교양학부)
Kim Chung-Hyeok (광운대 전기공학과)
Publication Information
The Transactions of the Korean Institute of Electrical Engineers C / v.54, no.9, 2005 , pp. 397-402 More about this Journal
Abstract
The ($Sr_{1-x}Ca_x)TiO_3(SCT)$ thin films are deposited on Pt-coated electrode (Pt/TiN/SiO$_{2}$Si) using RF sputtering method with substitutional contents of Ca. The optimum conditions of RF power and Ar/O$_{2}$ ratio were 140(W) and 80/20, respectively. Deposition rate of SCT thin film was about $18.75{\AA}$/min. The dielectric constant was increased with increasing the substitutional contents of Ca, while it was decreased if the substitutional contents of Ca exceeded over $15[mol\%]$. The capacitance characteristics had a stable value within $\pm4[\%]$ in temperature ranges of $-80\~+90[^{\circ}C]$. All SCT thin films used in this study show the phenomena of dielectric relaxation with the increase of frequency, and the relaxation frequency is observed above 200[kHz].
Keywords
Substitutional Contents; Deposition Rate; Dielectric Constant; Dielectric Relaxation;
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