• Journal of the Korean Vacuum Society
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• v.8 no.4B
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• pp.514-518
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• 1999

Gold (Au) is not supposed to react with sapphire(single crystalline ) under thermodynamic equillibrium, therefore, a strong adhesion between these two dissimilar materials is not expected. However, pull test showed that the gold film sputter-deposited onto annealed and pre-sputtered sapphire exhibited very strong adhesion even without post-deposition annealing. Strongly and weakly adhered samples as a result of the pull testing were selected to investigate the adhesion mechanisms with Auger electron spectroscopy. The Au/ interfaces were analyzed using a new technique that probes the interface on the film using Auger electron escape depth. It revealed that one or two monolayers of Au-Al-O compound formed at the Au/Sapphire interface when AES in the UHV chamber. It showed that metallic aluminum was detected on the surface of sapphire substrates after irradiating for 3 min. with 7keV Ar+ -ions. These results agree with TRIM calculations that yield preferential ion-beam etching. It is concluded that the formation of Au-Al-O compound, which is responsible for the strong metal-ceramic bonding, is due to ion-induced cleaning and reduction of the sapphire surface, and the kinetic energy of depositing gold atoms, molecules, and micro-particles as a driving force for the inter-facial reaction.

• Proceedings of the Korean Ceranic Society Conference
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• 1986.12a
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• pp.287-304
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• 1986

High quality monocrystalline $\beta$-SiC thin films were grown via two-step process of conversion of the Si(100) surface by reaction with $C_2H_4$ and the subsequent chemical vapor deposition (CVD) at $1360^{\circ}C$ and 1 atm total pressure. Four dopants, B and Al and p-type, and N and P for n-type, were also incorporated into monocrystalline $\beta$-SiC thin films during the CVD growth process. IR and Raman spectroscopies were used to evaluate the quality of the undoped $\beta$-SiC thin films and to investigate the effects of dopants on the structure of the doped $\beta$-SiC thin films. The changes in the shape of IR and Raman spectra of the doped thin films due to dopants were observed. But the XTEM micrographs except for the B-doped and annealed films showed the same density and distribution of stacking faults and dislocations as was seen in the undoped samples, The IR and Raman spectra of the B-doped and annealed films showed the broad and weak bands and one extra peak at the 850 $cm^{-1}$ respectively. The SAD pattern and XTEM micrograph of the B-doped and annealed film provided the evidence for twinning.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.11a
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• pp.37-37
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• 2008

에어로졸데포지션법을 이용하여 집적화 기판을 위한 $Al_2O_3$-PMMA 복합체 후막을 상온에서 구리 기판 위 에 제조하였다. XRD, FT-IR 분석을 통해 코팅된 막은 $Al_2O_3$와 PMMA의 혼합물로 존재함을 확인하였으며 성막 중 $Al_2O_3$. PMMA의 상호작용과 PMMA 파우더의 거동에 대한 분석을 통해 $Al_2O_3$-PMMA 복할체 후막의 성막 양상을 확인할 수 있었다. 또한 기판 거칠기에 따라 초기 계면의 양상이 달라질 수 있음을 확인하였고 이러한 초기 계면의 상태가 $Al_2O_3$-PMMA 복합체 후막의 제조에 있어 매우 중요함을 알 수 있었다. 본 연구에서는 에어로졸데포지션법을 이용한 $Al_2O_3$-PMMA 복합체 후막의 성막 양상을 통해 세라믹-폴리머 복합체의 제조에 있어서의 주요 변수들을 알아보고 $Al_2O_3$-PMMA 복합체 후막의 전기적인 특성을 확인하였다.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.25 no.4
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• pp.304-308
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• 2012

Transparent thin film transistors (TTFT) were fabricated using the rf magnetron sputtered ZnO-$SnO_2$ films as active layers. A ceramic target whose Zn atomic ratio to Sn is 2:1 was employed for the deposition of ZnO-$SnO_2$ films. To study the post-annealing effects on the properties of TTFT, ZnO-$SnO_2$ films were annealed at $200^{\circ}C$ or $400^{\circ}C$ for 5 min before In deposition for source and drain electrodes. Oxygen was added into chamber during sputtering to raise the resistivity of ZnO-$SnO_2$ films. The effects of oxygen addition on the properties of TTFT were also investigated. 100 nm $Si_3N_4$ film grown on 100 nm $SiO_2$ film was used as gate dielectrics. The mobility, $I_{on}/I_{off}$, interface state density etc. were obtained from the transfer characteristics of ZnO-$SnO_2$ TTFTs.

• Proceedings of the Korean Vacuum Society Conference
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• 2010.08a
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• pp.99-99
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• 2010

Recently, amorphous transparent oxide semiconductors (TOS) have been widely studied for many optoelectronic devices such as AM-OLED (active-matrix organic light emitting diodes). The TOS TFTs using a-IGZO channel layers exhibit a high electron mobility, a smooth surface, a uniform deposition at a large area, a high optical transparency, a low-temperature fabrication. In spite of many advantages of the sputtering process such as better step coverage, good uniformity over large area, small shadow effect and good adhesion, there are not enough researches about characteristics of a-IGZO thin films. In this study, therefore, we focused on the electrical properties of a-IGZO thin films as a channel layer of TFTs. TFTs with the a-IGZO channel layers and Y2O3 gate insulators were fabricated. Source and drain layers were deposited using ITO target. TFTs were deposited on unheated non-alkali glass substrates ($5cm{\times}5cm$) with a sintered ceramic IGZO disc (3 inch $\varnothing$, 5mm t), Y2O3 disc (3 inch $\varnothing$, 5mm t) and ITO disc (3 inch $\varnothing$, 5mm t) as a target by magnetron sputtering method. The O2 gas was used as the reactive gas. Deposition was carried out under various sputtering conditions to investigate the effect of sputtering process on the characteristics of a-IGZO thin films. Correlation between sputtering factors and electronic properties of the film will be discussed in detail.

• Transactions on Electrical and Electronic Materials
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• v.6 no.1
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• pp.10-13
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• 2005

$Sr_{0.6}Ba_{0.4}Nb_{2}O_{6}$, hereafter SBN60, thin films of 300 nm thickness were deposited using ion beam sputtering technique, in which sintered ceramic target of the same composition was utilized and the $Ar:O_{2}$ gas ratio was controlled during deposition onto $Pt(100)/TiO_{2}/SiO_{2}/Si$ substrate. Crystallization and orientation behavior as well as electrical properties of the films were examined after annealing treatment at $650{\sim}800{\cric}C$. It was found that the film orientation was dependent upon $Ar:O_{2}$ratio, in which strong (00l) orientation was developed when the gas ratio was about 1:4 at $4.3{\times}10^{-4}$ torr. Typical remanent polarization (2Pr), the coercive field (Ec) and the dielectric constant of Pt/SBN60/Pt thin film capacitor were approximately $10{\mu}C/cm^{2}$, 60 kV/cm, and 615, respectively.

• Journal of Powder Materials
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• v.1 no.1
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• pp.42-51
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• 1994

6061Al-SiCP metal matrix composite materials(MMCs) were fabricated by injecting SiCP particles directly into the atomized spray. The main attraction of this technique is the rapid fabrication of semi-finished, composite products in a combined atomization, particulate injection(10 $\mu\textrm{m}$, 40 $\mu\textrm{m}$, SiCP) and deposition operation. Conclusions obtained are as follows; The microstructure of the unreinforced spray formed 6061Al alloy consisted of relatively fine(50 $\mu\textrm{m}$) equiaxed grains. By comparision, the microstructure of the I/M materials was segregated and consisted of relatively coarse(150 $\mu\textrm{m}$) grains. The probability of clustering of SiCP particles in co-sprayed metal matrix composites increased it ceramic particle size(SiCP) was reduced and the volume fraction was held constant. Analysis of overspray powders collected from the spray atomization and deposition experiments indicated that morphology of powders were nearly spherical and degree of powders sphercity was deviated due to composite with SiCp particles. Interfacial bonding between matrix and ceramics was improved by heat treatment and addition of alloying elements(Mg). Maximum hardness values [Hv: 165 kg/mm2 for Al-10 $\mu\textrm{m}$ SiCp Hv--159 kg/mm2 for Al-40 $\mu\textrm{m}$SiCp] were obtained through the solution heat treatment at $530^{\circ}C$ for 2 hrs and aging at $178^{\circ}C$, and there by the resistance were improved.

• Journal of Sensor Science and Technology
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• v.27 no.1
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• pp.1-5
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• 2018

Two-dimensional (2D) niobate-based nanosheets have attracted attention as high-k dielectric materials. We synthesized strontiumsubstituted calcium niobate ($Ca_{0.8}Sr_{1.2}Nb_3O_{10}$) nanosheets by a two-step cation exchange process from $KCa_{0.8}Sr_{1.2}Nb_3O_{10}$ ceramic. The $K^+$ ions were exchanged with $H^+$ ions, and then H+ ions were exchanged with tetrabutylammonium ($TBA^+$) cations. The $Ca_{0.8}Sr_{1.2}Nb_3O_{10}$ nanosheets were then exfoliated, decreasing the electrostatic interaction between each niobate layer. Furthermore, $Ca_2Nb_3O_{10}$ nanosheets were synthesized in same process for comparison. Each exfoliated nanosheet shows a single-crystal phase and has a lateral size of over 100 nm. The nanosheets were deposited on a $Pt/Ti/SiO_2/Si$ substrate by the electrophoretic deposition (EPD) method at 40 V, followed by ultraviolet irradiation of the films in order to remove the remaining $TBA^+$ ions. The $Ca_{0.8}Sr_{1.2}Nb_3O_{10}$ thin film exhibited twice the dielectric permittivity (~60) and lower dielectric loss than $Ca_2Nb_3O_{10}$ thin films.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2005.05b
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• pp.106-109
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• 2005

The $(Sr_{1-x}Ca_x)TiO_3$(SCT) thin films are deposited on Pt-coated electrode (Pt/TiN/$SiO_2$/Si) using RF sputtering method with substitutional contents of Ca. The optimum conditions of RF power and Ar/$O_2$ ratio were 140[W] and 80/20, respectively. Deposition rate of SCT thin film was about 18.75[$\AA$/min]. The dielectric constant was increased with increasing the substitutional contents of Ca, while it was decreased if the substitutional contents of Ca exceeded over 15[mol%]. The capacitance characteristics had a stable value within ${\pm}4$[%] in temperature ranges of -80~+90[$^{\circ}C$].

• Journal of the Korean Society of Manufacturing Process Engineers
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• v.17 no.1
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• pp.16-22
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• 2018

Silicon carbide (SiC) is used in various semiconductor processes because it has superior thermal, mechanical, and electrical characteristics as well as higher chemical and corrosion resistance than existing materials. Due to these characteristics, various manufacturing technologies have been developed for SiC. A recent development among these technologies is Chemical Vapor Deposition SiC (CVD-SiC). Many studies have been carried out on the processing and manufacturing of CVD-SiC due to its different material characteristics compared to existing materials like RB-SiC or Sintered-SiC. CVD-SiC is physically stable and has excellent chemical and corrosion resistance. However, there is a problem with increasing the thickness, because it is manufactured through a deposition process. Additionally, due to its high strength and hardness, it is difficult to subject to machining.