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http://dx.doi.org/10.4313/JKEM.2012.25.4.304

The Effects of Oxygen Partial Pressure and Post-annealing on the Properties of ZnO-SnO2 Thin Film Transistors  

Ma, Tae-Young (Department of Electrical Engineering and ERI, Gyeongsang National University)
Publication Information
Journal of the Korean Institute of Electrical and Electronic Material Engineers / v.25, no.4, 2012 , pp. 304-308 More about this Journal
Abstract
Transparent thin film transistors (TTFT) were fabricated using the rf magnetron sputtered ZnO-$SnO_2$ films as active layers. A ceramic target whose Zn atomic ratio to Sn is 2:1 was employed for the deposition of ZnO-$SnO_2$ films. To study the post-annealing effects on the properties of TTFT, ZnO-$SnO_2$ films were annealed at $200^{\circ}C$ or $400^{\circ}C$ for 5 min before In deposition for source and drain electrodes. Oxygen was added into chamber during sputtering to raise the resistivity of ZnO-$SnO_2$ films. The effects of oxygen addition on the properties of TTFT were also investigated. 100 nm $Si_3N_4$ film grown on 100 nm $SiO_2$ film was used as gate dielectrics. The mobility, $I_{on}/I_{off}$, interface state density etc. were obtained from the transfer characteristics of ZnO-$SnO_2$ TTFTs.
Keywords
Transparent thin film transistors; ZnO-$SnO_2$ films; Rf magnetron sputtering; Mobility; Interface state density;
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