• Journal of Industrial Technology
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• v.32 no.A
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• pp.109-114
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• 2012

In this paper, We studied LED(Light Emitted Diode) sensor lights system using PIR(Pyroelectric Infrared Ray) sensor, CdS and MCU(Micro Controller Unit). And applied the valley fill circuit to improve the power factor. We designed the amplifier for each sensor and the LED driver for constant current which is the buck converter. Also, we proposed the algorithm of LED control by each sensors using MCU. Experimental results showed that power factor is 92% with valley fill circuit.

• Korean Journal of Materials Research
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• v.16 no.2
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• pp.129-136
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• 2006

In order to get basic information on the reference electrode material for the long life Al concentration sensor in zinc galvanizing melt, the workability and stability of fluorine potential cell with $CaF_2$ single crystal electrolyte were examined carefully at constant temperature for six kinds of reference materials (Zn, Sn, Cd, Bi, Pb, Al-Sn alloy + fluorides). Good workability and stability of the sensor were found in sensor with $Bi+BiF_3$ reference electrode. The Al sensor with $Bi+BiF_3$ reference electrode was assembled and was tested in Zn-Al melt with different Al concentration. The EMF was changed rapidly with the change of Al concentration and was stabilized in a short time. Thus the response of EMF was satisfactory for $CaF_2$ sensor. The correlationship between EMF from the sensor and logarithm of Al concentration has been derived from the least square regression method. E/mV=57.515log[wt% Al]+1883.3 R=0.9717 ($0.013{\leq}[wt% Al]{\leq}0.984$) The EMF from Al sensor was increased linearly against logarithm of [wt% Al]. The fluorine potential of Zn-Al melt was also calculated to be in the range of $10^{-60}{\sim}10^{-61}$ Pa for the present experiemental condition.

• Journal of Sensor Science and Technology
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• v.2 no.1
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• pp.109-115
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• 1993

A CdS single crystal was grown by using sublimation method. Lattice constants, $a_{o}$ and $c_{o}$, obtained by using extrapolation were $4.131{\underline{8}}{\AA}$ and $6.712{\underline{2}}{\AA}$, respectively. The carrier density was${\sim}10^{23}m^{-3}$ and the mobility was $2.93{\times}10^{-2}m^{2}$/V sec from measured Hall data at room temperature. The mobility has a increasing tendency in proportion to $T^{1/2}$ from 33 K to 150 K and a decreasing tendency in proportion to $T^{-2}$ from 180 K to room temperature. The short wavelength band peak measured from photocurrent was due to intrinsic transition, and the energy value of this peak was equal to the energy band gap of CdS photoconductor.

• Journal of Sensor Science and Technology
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• v.12 no.6
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• pp.273-281
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• 2003

A stoichiometric mixture for $CdIn_2Te_4$ single crystal was prepared from horizontal electric furnace. The $CdIn_2Te_4$ single crystal was grown in the three-stage vertical electric furnace by using Bridgeman method. The quality of the grown crystal has been investigated by the x-ray diffraction and the photoluminescence measurements. The (001) growth plane of oriented $CdIn_2Te_4$ single crystal was confirmed from back-reflection Laue patterns. The carrier density and mobility of $CdIn_2Te_4$ single crystal measured with Hall effect by van der Pauw method are $8.61{\times}10^{16}\;cm^{-3}$ and $242\;cm^2/V{\cdot}s$ at 293 K, respectively. The temperature dependence of the energy band gap of the $CdIn_2Te_4$ single crystal obtained from the absorption spectra was well described by the Varshni's relation, $E_g(T)=1.4750\;eV-(7.69{\times}10^{-3}\;eV)T^2/(T+2147)$. After the as-grown $CdIn_2Te_4$ single crystal was annealed in Cd-, In-, and Te-atmospheres, the origin of point defects of $CdIn_2Te_4$ single crystal has been investigated by the photoluminescence(PL) at 10 K. The native defects of $V_{Te}$, $Cd_{int}$, and $V_{Cd}$, $Te_{int}$ obtained by PL measurements were classified as a donors or acceptors type. And we concluded that the heat-treatment in the Cd-atmosphere converted $CdIn_2Te_4$ single crystal to an optical n-type. Also, we confirmed that In in $CdIn_2Te_4$ did not form the native defects because In in $CdIn_2Te_4$ single crystal existed in the form of stable bonds.

• Journal of Sensor Science and Technology
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• v.11 no.2
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• pp.77-83
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• 2002

In order to get low cost and portability, semiconductor gas sensor need to have low operating temperature and high sensitivity. $Fe_2O_3$ based sensors which were doped with metal oxide catalysts($MoO_3$, $V_2O_5$, $TiO_2$, and CdO) were fabricated by screen printing method. To improve electrical stability of sensors, the $Fe_2O_3$ sensors were annealed in $N_2$ at $700^{\circ}C$ for 2 hours. The $V_2O_5$ doped $Fe_2O_3$ sensor showed about $80{\sim}90%$ sensitivity at alcohol 1,000 ppm and have good selectivity to hydrocarbon gas and tobacco odors. The fabricated sensor and PIC-chip were employed for portable alarm system.

• The Transactions of the Korean Institute of Electrical Engineers C
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• v.54 no.11
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• pp.490-492
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• 2005

A study on radiation hardening of infrared(IR) detector, the chief component of IR camera was performed. The radiation test on IR sensor passivated with the ZnS by Co$^{60}$ gamma-ray over 1 Mrads showed the reduction in Ro by 1/100 which was related to the noise level. This effect that was caused by carrier trapping in the ZnS passivation layer increased the leakage current and resulted in degradation in the device performance. For the radiation hardening of IR devices we suggested the ones with CdTe passivation layer which had a tendency to reluctant to carrier trapping in its layer and developed test patterns. Radiation test to the patterns showed that the our CdTe passivated device could survived over 1 Mrad gamma-ray dose.

• Journal of Sensor Science and Technology
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• v.22 no.3
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• pp.185-190
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• 2013

We report on direct finding of how the morphology (i.e. filopodia width) of $CD4^+$ T lymphocytes correlates with the size of the quartz nanohohole arrays (QNHAs, 140, 200, 270, and 550 nm in diameter) via scanning electron microscopy (SEM). This research exhibits that the filopodia of $CD4^+$ T-lymphocytes extended on the QNHA substrates were observed to increase in width by increasing the size of QNHA in diameter from 140 to 550 nm. This strong linear response ($R^2$=0.988, n = 6) in filopodia's width of surface-bound $CD4^+$ T-cells with topographical structures of QNHA can be explained by contact guidance between the cells and solid-state substrates. Furthermore, this research suggests that the protruded filopodia of surface-bound T-lymphocytes can be used as a biosensor for sensing the topographical information of the nano-patterned substrates.

• Journal of Sensor Science and Technology
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• v.13 no.2
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• pp.128-132
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• 2004

Short wave infrared (SWIR) photovoltaic devices have been fabricated from metal organic vapour phase epitaxy (MOVPE) grown n- on p- HgCdTe films on GaAs substrates. The MOVPE grown films were processed into mesa type discrete devices with wet chemical etching employed for meas delineation and ZnS surface passivatlon. ZnS was thermally evaporated from effusion cell in an ultra high vacuum (UHV) chamber. The main features of the ZnS deposited from effusion cell in UHV chamber are low fixed surface charge density, and small hysteresis. It was found that a negative flat band voltage with -0.6 V has been obtained for Metal Insulator Semiconductor (MIS) capacitor which was evaporated at $910^{\circ}C$ for 90 min. Current-Voltage (I-V) and temperature dependence of the I-V characteristics were measured in the temperature range 80 - 300 K. The Zero bias dynamic resistance-area product ($R_{0}A$) was about $7500{\Omega}-cm^{2}$ at room temperature. The physical mechanisms that dominate dark current properties in the HgCdTe photodiodes are examined by the dependence of the $R_{0}A$ product upon reciprocal temperature. From theoretical considerations and known current expressions for thermal and tunnelling process, the device is shown to be diffusion limited up to 180 K and g-r limited at temperature below this.

• Journal of the Korean Institute of Intelligent Systems
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• v.23 no.4
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• pp.341-347
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• 2013

This study presents the remote control of a board robot using a Sensing glove based on Bluetooth communication. The board robot is a kind of riding robot controlled by an user. The user wears the proposed remote glove controller, and changes a direction of the robot by different kinds of finger actions. Bluetooth is used for wireless communication between the board robot and its user. CdS cell Sensors and a LED in the glove are used for recognition of a number of finger actions, which are measured as analog signals. The finger actions have five commands ('1'right '2'neutrality '3'left '4'operation '5'stop), which are transmitted from the user to the board robot through Bluetooth communication. Experimental results show that proposed a Sensing glove can effectively control the board robot.

• Journal of Sensor Science and Technology
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• v.10 no.6
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• pp.328-337
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• 2001

The stochiometric mix of evaporating materials for the $CdGa_2Se_4$ single crystal thin films was prepared from horizontal furnace. To obtain the single crystal thin films, $CdGa_2Se_4$ mixed crystal was deposited on thoroughly etched semi-insulating GaAs(100) substrate by the Hot Wall Epitaxy (HWE) system. The source and substrate temperature were $630^{\circ}C$ and $420^{\circ}C$, respectively. The crystalline structure of single crystal thin films was investigated by the photoluminescence and double crystal X-ray diffraction (DCXD). The carrier density and mobility of $CdGa_2Se_4$ single crystal thin films measured from Hall effect by van der Pauw method are $8.27{\times}10^{17}cm^{-3}$, $345\;cm^2/V{\cdot}s$ at 293 K, respectively. From the photocurrent spectrum by illumination of perpendicular light on the c-axis of the $CuInSe_2$ single crystal thin film, we have found that the values of spin orbit splitting ${\Delta}So$ and the crystal field splitting ${\Delta}Cr$ were 106.5 meV and 418.9 meV at 10 K, respectively. From the photoluminescence measurement on $CdGa_2Se_4$ single crystal thin film, we observed free excition ($E_x$) existing only high quality crystal and neutral bound exiciton ($D^{\circ}$, X) having very strong peak intensity. Then, the full-width-at -half-maximum(FWHM) and binding energy of neutral donor bound excition were 8 meV and 13.7 meV, respectivity. By Haynes rule, an activation energy of impurity was 137 meV.