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A Study on Radiation Hardening of a Infrared Detector  

Lee, Nam-Ho (한국원자력연구소)
Kim, Seung-Ho (한국원자력연구소)
Kim, Young-Ho (아이쓰리시스템(주))
Publication Information
The Transactions of the Korean Institute of Electrical Engineers C / v.54, no.11, 2005 , pp. 490-492 More about this Journal
Abstract
A study on radiation hardening of infrared(IR) detector, the chief component of IR camera was performed. The radiation test on IR sensor passivated with the ZnS by Co$^{60}$ gamma-ray over 1 Mrads showed the reduction in Ro by 1/100 which was related to the noise level. This effect that was caused by carrier trapping in the ZnS passivation layer increased the leakage current and resulted in degradation in the device performance. For the radiation hardening of IR devices we suggested the ones with CdTe passivation layer which had a tendency to reluctant to carrier trapping in its layer and developed test patterns. Radiation test to the patterns showed that the our CdTe passivated device could survived over 1 Mrad gamma-ray dose.
Keywords
Infrared; Camera; Radiation; Detector; MCT; Hardening;
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  • Reference
1 R. Adar, 'Spatial integration of direct band to band tunneling currents in general device structures', IEEE Trans. Electron. Device 39, 976, (1992) Instruments & Methods, vol.121, pp.169-179, 1974   DOI   ScienceOn
2 E.L.Dereniak, G.D. Boreman, Infrared Detectors and Systems, 1st Ed., John Wiley & Sons, New York (1996), chap. 1
3 R.S. Muller, T.I. Kamins, Device Electronics for Integrated Circuits, 2nd Ed. Wiley, New York, (1986)