• 제목/요약/키워드: CdS/CdSe

검색결과 307건 처리시간 0.031초

Photocatal~ic Hydrogen Evolution with Platinum Loaded Cadmium-Iron-Sulfide Mixed Crystal Powders in Aque-ous Media

  • Jo, Cheol Rae;Park, Se Jin;Kim, Ha Seok
    • Bulletin of the Korean Chemical Society
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    • 제21권8호
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    • pp.805-808
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    • 2000
  • Mixed crystal powders based on Cd,Fe, and S have been synthesized by varying the ratio of CdS and $FeS_2in$ order to find a suitable material usefuI for the effectivc conversion of solar energy. Hydrogen gas was evolved only with CdS/Ptby photocatal ytic reaction under white light in an aqueous 1 M sodiumsulfite solution. From electrochemical studies of semiconductor electrodes. itwas shown that the onset potential shifted to the positive direction and that the bandgap energy also decreased as the molar ratio of Fe increased. A hydrogen evolution mechanism in terms of the conduction band potential and hydrogen evolution potential is proposed.

Effect of Bi and Zr addition on yellow colour properties of environment-friendly ceria-based pigments (비스무스와 지르코늄 첨가를 통한 세리아계 친환경 노란색 안료 특성에 관한 연구)

  • Kim, Tae-Ho;Hwang, Hae-Jin;Kim, Jin-Ho;Hwang, Kwang-Taek;Han, Kyu-Sung
    • Journal of the Korean Crystal Growth and Crystal Technology
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    • 제25권4호
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    • pp.153-159
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    • 2015
  • Inorganic pigments have been received a great attention for various applications including paint, glazed ceramic ink, art tile, and building exterior due to their excellent thermal and chemical stability. Traditionally, the compositions of $PbCrO_4$, CdS and CdSe have been widely used as a yellow inorganic pigment. However, the use of these compositions has been restricted in recent years, because they contain harmful elements such as Cd, Cr, Pb and Se. In this study, new environment-friendly ceria-based pigment was synthesized using solid state reaction. Crystal structure and morphology of the obtained $Ce_{1-x}Zr_xBi_yO_{2-y/2}$ yellow pigment were analyzed using XRD and SEM, respectively. Substitutional effect of Zr and Bi on the pigment color was analyzed using UV-vis. spectrophotometer and CIE $L^*a^*b^*$ analysis. The crystal structure of the obtained pigments was dependent on the calcination temperature. The color characteristics and absorption band of the pigments were dependent on the calcination temperature and Zr, Bi contents. As a result, all the obtained yellow pigments showed the effective absorption ranged from ultraviolet to visible light, and $Ce_{0.44}Zr_{0.36}Bi_{0.20}O_{0.19}$ (x = 0.36, y = 0.20) pigment showed the most brilliant yellow color.

Carrier Transport of Quantum Dot LED with Low-Work Function PEIE Polymer

  • Lee, Kyu Seung;Son, Dong Ick;Son, Suyeon;Shin, Dong Heon;Bae, Sukang;Choi, Won Kook
    • Proceedings of the Korean Vacuum Society Conference
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    • 한국진공학회 2014년도 제46회 동계 정기학술대회 초록집
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    • pp.432.2-432.2
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    • 2014
  • Recently, colloidal core/shell type quantum dots lighting-emitting diodes (QDLEDs) have been extensively studied and developed for the future of optoelectronic applications. In the work, we fabricate an inverted CdSe/ZnS quantum dot (QD) based light-emitting diodes (QDLED)[1]. In order to reduce work function of indium tin oxide (ITO) electrode for inverted structure, a very thin (<10 nm) polyethylenimine ethoxylated (PEIE) is used as surface modifier[2] instead of conventional metal oxide electron injection layer. The PEIE layer substantially reduces the work function of ITO electrodes which is estimated to be 3.08 eV by ultraviolet photoemission spectroscopy (UPS). From transmission electron microscopy (TEM) study, CdSe/ZnS QDs are uniformly distributed and formed by a monolayer on PEIE layer. In this inverted QD LED, two kinds of hybrid organic materials, [poly (9,9-di-n-octyl-fluorene-alt-benzothiadiazolo)(F8BT) + poly(N,N'-bis (4-butylphenyl)-N,N'-bis(phenyl)benzidine (poly-TPD)] and [4,4'-N,N'-dicarbazole-biphenyl (CBP) + poly-TPD], were adopted as hole transport layer having high highest occupied molecular orbital (HOMO) level for improving hole transport ability. At a low-operating voltage of 8 V, the device emits orange and red spectral radiation with high brightness up to 2450 and 1420 cd/m2, and luminance efficacy of 1.4 cd/A and 0.89 cd/A, respectively, at 7 V applied bias. Also, the carrier transport mechanisms for the QD LEDs are described by using several models to fit the experimental I-V data.

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Flexible Cu-In-Se Quantum Dot-Sensitized Solar Cells Based on Nanotube Electrodes (나노튜브 전극을 기반으로 한 플렉서블 양자점 감응 태양전지)

  • Kim, Jae-Yup
    • Journal of Powder Materials
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    • 제26권1호
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    • pp.45-48
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    • 2019
  • Quantum dots (QDs) are an attractive material for application in solar energy conversion devices because of their unique properties including facile band-gap tuning, a high-absorption coefficient, low-cost processing, and the potential multiple exciton generation effect. Recently, highly efficient quantum dot-sensitized solar cells (QDSCs) have been developed based on CdSe, PbS, CdS, and Cu-In-Se QDs. However, for the commercialization and wide application of these QDSCs, replacing the conventional rigid glass substrates with flexible substrates is required. Here, we demonstrate flexible CISe QDSCs based on vertically aligned $TiO_2$ nanotube (NT) electrodes. The highly uniform $TiO_2$ NT electrodes are prepared by two-step anodic oxidation. Using these flexible photoanodes and semi-transparent Pt counter electrodes, we fabricate the QDSCs and examine their photovoltaic properties. In particular, photovoltaic performances are optimized by controlling the nanostructure of $TiO_2$ NT electrodes.

Effect of Complex Agent NH3 Concentration on the Chemically Deposited Zn Compound Thin Film on the $Cu(In,Ga)Se_2$

  • Shin, Dong-Hyeop;Larina, Liudmila;Yun, Jae-Ho;Ahn, Byung-Tae;Park, Hi-Sun
    • Proceedings of the Materials Research Society of Korea Conference
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    • 한국재료학회 2010년도 춘계학술발표대회
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    • pp.35.1-35.1
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    • 2010
  • The Cu(In,Ga)Se2(CIGS) thin film solar cells have been achieved until almost 20% efficiency by NREL. These solar cells include chemically deposited CdS as buffer layer between CIGS absorber layer and ZnO window layer. Although CIGS solar cells with CdS buffer layer show excellent performance, many groups made hard efforts to overcome its disadvantages in terms of high absorption of short wavelength, Cd hazardous element. Among Cd-free candidate materials, the CIGS thin film solar cells with Zn compound buffer layer seem to be promising with 15.2%(module by showa shell K.K.), 18.6%(small area by NREL). However, few groups were successful to report high-efficiency CIGS solar cells with Zn compound buffer layer, compared to be known how to fabricate these solar cells. Each group's chemical bah deposition (CBD) condition is seriously different. It may mean that it is not fully understood to grow high quality Zn compound thin film on the CIGS using CBD. In this study, we focused to clarify growth mechanism of chemically deposited Zn compound thin film on the CIGS, especially. Additionally, we tried to characterize junction properties with unfavorable issues, that is, slow growth rate, imperfect film coverage and minimize these issues. Early works reported that film deposition rate increased with reagent concentration and film covered whole rough CIGS surface. But they did not mention well how film growth of zinc compound evolves homogeneously or heterogeneously and what kinds of defects exist within film that can cause low solar performance. We observed sufficient correlation between growth quality and concentration of NH3 as complex agent. When NH3 concentration increased, thickness of zinc compound increased with dominant heterogeneous growth for high quality film. But the large amounts of NH3 in the solution made many particles of zinc hydroxide due to hydroxide ions. The zinc hydroxides bonded weakly to the CIGS surface have been removed at rinsing after CBD.

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Development of Kesterite Cu2ZnSn(S1-x,Sex)4 (CZTSS)-Based Thin Film Solar Cells with In and Ga Free Absorber Materials (In과 Ga가 미포함 된 Kesterite Cu2ZnSn(S1-x,Sex)4 (CZTSS) 박막형 태양전지 개발 현황)

  • Shin, Seung-Wook;Han, Jun-Hee;Gang, Myeng-Gil;Yun, Jae-Ho;Lee, Jeong-Yong;Kim, Jin-Hyeok
    • Korean Journal of Materials Research
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    • 제22권5호
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    • pp.259-273
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    • 2012
  • Chalcogenide-based semiconductors, such as $CuInSe_2$, $CuGaSe_2$, Cu(In,Ga)$Se_2$ (CIGS), and CdTe have attracted considerable interest as efficient materials in thin film solar cells (TFSCs). Currently, CIGS and CdTe TFSCs have demonstrated the highest power conversion efficiency (PCE) of over 11% in module production. However, commercialized CIGS and CdTe TFSCs have some limitations due to the scarcity of In, Ga, and Te and the environmental issues associated with Cd and Se. Recently, kesterite CZTS, which is one of the In- and Ga- free absorber materials, has been attracted considerable attention as a new candidate for use as an absorber material in thin film solar cells. The CZTS-based absorber material has outstanding characteristics such as band gap energy of 1.0 eV to 1.5 eV, high absorption coefficient on the order of $10^4cm^{-1}$, and high theoretical conversion efficiency of 32.2% in thin film solar cells. Despite these promising characteristics, research into CZTS-based thin film solar cells is still incomprehensive and related reports are quite few compared to those for CIGS thin film solar cells, which show high efficiency of over 20%. The recent development of kesterite-based CZTS thin film solar cells is summarized in this work. The new challenges for enhanced performance in CZTS thin films are examined and prospective issues are addressed as well.

Inverted CdSe@ZnS Quantum Dots Light-Emitting Diode using Low-Work Function Polyethylenimine Ethoxylated (PEIE) modified ZnO

  • Kim, Choong Hyo;Kim, Hong Hee;Hwang, Do Kyung;Suh, Kwang S;Park, Cheol Min;Choi, Won Kook
    • Proceedings of the Korean Vacuum Society Conference
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    • 한국진공학회 2015년도 제49회 하계 정기학술대회 초록집
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    • pp.148-148
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    • 2015
  • Over the past several years, Colloidal core/shell type quantum dots lighting-emitting diodes (QDLEDs) have been developed for the future of optoelectronic applications. An inverted-type quantum-dot light-emitting-diode (QDLED), employing low work function organic material polyethylenimine ethoxylated(PEIE) (<10 nm)[1] modified ZnO nanoparticles (NPs) as electron injection and transport layer, was fabricated by all solution processing method, instead of electrode in the device. The PEIE surface modifier incorporated on the top of the ZnO NPs film, facilitates the enhancement of both electorn injection into the CdSe-ZnS QD emissive layer by lowering the workfunction of ZnO from 3.58eV to 2.87eV and charge balance on the QD emitter. In this inverted QDLEDs, blend of poly (9,9-di-n-octyl-fluorene-alt-benzothiadiazolo) and poly(N,N'-bis(4-butylphenyl)-N,N'-bis(phenyl)benzidine] are used as hole transporting layer (HTL) to improve hole transporting property. At the operating voltage of 7.5 V, the QDLED device emitted spectrally orange color lights with high luminance up to 11110 cd/m2, and showed current efficiency of 2.27 cd/A.[2]

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A Correlative Study on Aβ and CD95 Pathway Independent to Ca2+ Dependent Protease and Activation of Caspase Activation

  • Tuyet, Pham Thi Dieu
    • Journal of Integrative Natural Science
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    • 제7권1호
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    • pp.25-38
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    • 2014
  • Amyloid-${\beta}$-peptide ($A{\beta}$) is important in the pathogenesis of Alzheimer's disease (AD). Calpain ($Ca^{2+}$-dependent protease) and caspase-8 (the initiating caspase for the extrinsic, receptor-mediated apoptosis pathway) have been implicated in $AD/A{\beta}$ toxicity. We found that $A{\beta}$ promoted degradation of calpastatin (the specific endogenous calpain inhibitor); calpastatin degradation was prevented by inhibitors of either calpain or caspase-8. The results implied a cross-talk between the two proteases and suggested that one protease was responsible for the activity of the other one. In neuron-like differentiated PC12 cells, calpain promotes active caspase-8 formation from procaspase-8 via the $A{\beta}$ and CD95 pathways, along with degradation of the procaspase-8 processing inhibitor caspase-8 (FLICE)-like inhibitory protein, short isoform (FLIPS). Inhibition of calpain (by pharmacological inhibitors and by overexpression of calpastatin) prevents the cleavage of procaspase-8 to mature, active caspase-8, and inhibits FLIPS degradation in the $A{\beta}$-treated and CD95-triggered cells. Increased cellular Ca2+ per se results in calpain activation but does not lead to caspase-8 activation or FLIPS degradation. The results suggest that procaspase-8 and FLIPS association with cell membrane receptor complexes is required for calpain-induced caspase-8 activation. The results presented here add to the understanding of the roles of calpain, caspase- 8, and CD95 pathway in $AD/A{\beta}$ toxicity. Calpain-promoted activation of caspase-8 may have implications for other types of CD95-induced cell damage, and for nonapoptotic functions of caspase-8. Inhibition of calpain may be useful for modulating certain caspase-8-dependent processes.

A Study on the Cu-based $I-III-VI_2$ Compound Thin Film Solar Cells ($CulnSe2$계 화합물 박막 태양전지 연구)

  • Yun JaeHo;Ahn SeJin;Kim SeokKi;Lee JeongChul;Song JinSoo;Kim Ki Hwan;Ahn Byung Tae;Yoon KyungHoon
    • New & Renewable Energy
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    • 제1권2호
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    • pp.6-10
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    • 2005
  • [ $CulnSe2$ ]계 화합물은 직접천이형 반도체로 광흡수계수가 매우 높아 박막형 태양전지 제조에 매우 유리하다. 또한 화학적으로 안정하며 Ga, Al 등을 첨가하면 에너지 금지대폭을 조절할 수 있어 Wide Bandgap 태양전지 및 탠덤구조 태양전지를 제조하기에도 용이하다. CIS 물질에서 In을 $20-30\%$ 정도 치환한 $Cu(In,\;Ga)Se_2(CIGS)$ 태양전지의 경우 19.5%의 세계 최고 효율을 보고하고 있으며 이는 다결정 실리콘 태양전지의 효율과 비슷한 수준이다. 본 연구에서는 동시 질공증발법을 이용하여 증착한 CIGS 박막 및 $CuGaSe_2(CGS)$ 박막을 이용하여 태양전지를 제조하였다. 공정의 재현성 및 결정립계가 큰 광흡수층 제조를 위하여 실시간 기판 온도 모니터링 시스템을 도입하였으며 버퍼층으로는 용액성장한 CdS 박막을 사용하였다. SLG/MO/CIGS(CGS)/CdS/ZnO/Al 구조의 태양전지를 제조하여 면적 $0.5cm^2$에서 각각 $17\%(CIGS)$$7\%(CGS)$의 효율을 얻었다.

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