• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.22 no.12
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• pp.1097-1106
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• 2011

In this paper, we present design method of wideband single-sideband mixer(SSM) with excellent sideband suppression and carrier suppression. We proposed SSM with 4-band split structure for uniform output flatness. From circuit simulation of this structure using Microwave OfficeTM, we got satisfactory results. We realized a SSM based on this results, then we experimented. The measured results show excellent agreements with the simulated results. We compared with two SSM's(target SSM(M Co. SM0218LC1CDC SSM) and our SSM) as well. The presented SSM is 3.35 times bigger, but sideband suppression is 3 dBc better and carrier suppression is 8 dBc better than those of comparative SSM, respectively.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.22 no.4
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• pp.489-499
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• 2011

RFID technologies, which allow collecting, storing, processing, and tracking information by wirelessly recognizing the inherent ID of object through an attached electronic tag, have a variety of application areas. This paper presents a novel carrier leakage suppression RF(CLS-RF) front-end for ultra-high-frequency RF identification reader. The proposed reader CLS-RF front-end structure generates the carrier leakage replica through the nonlinear path that contains limiter. The limiting function only preserves the frequency and phase information of the leakage signal and rejects the amplitude modulated tag signal in the envelope. The carrier leakage replica is then injected into the linear path that contains phase shifter. Therefore, the carrier leakage signal is effectively cancelled out, while not affecting the gain of the desired tag backscattering signal. We experimentally confirm that the prototype shows a significant improvement in the leakage to signal ratio by up to 36 dB in 910 MHz, which is consistent with our simulation results.

• Proceedings of the KIEE Conference
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• 1998.11c
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• pp.735-736
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• 1998

Reduction of hot carrier degradation in MOS devices has been one of the most serious concerns for MOS-ULSIs. In this paper, three types of LDD structure for suppression of hot carrier degradation, such as spacer-induced degradation and decrease of performance due to increase of series resistance will be investigated. LDD-nMOSFETs used in this study had three different drain structure. (1) conventional ${\underline{S}}urface$ type ${\underline{L}}DD$(SL), (2) ${\underline{B}}uried$ type ${\underline{L}}DD$(BL), (3) ${\underline{S}}urface$urface ${\underline{I}}mplantation$ type LDD(SI). As a result, the surface implantation type LDD structure showed that improved hot carrier lifetime to comparison with conventional surface and buried type LDD structure.

• KSII Transactions on Internet and Information Systems (TIIS)
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• v.11 no.11
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• pp.5377-5391
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• 2017

In this paper, we propose a new scheme to suppress the narrowband interference (NBI) in OFDM-based systems. The scheme utilizes code division multiple access (CDMA) and weighted-type fractional Fourier transform (WFRFT) domain preprocessing technologies. Through setting the WFRFT order, the scheme can switch into a single carrier (SC) or a multi-carrier (MC) frequency division multiple access block transmission system. The residual NBI can be eliminated to the maximum extent when the WFRFT order is selected properly. Final simulation results show that the proposed system can outperform MC and SC with CDMA and frequency domain preprocessing in terms of the narrowband interference suppression.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.22 no.1
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• pp.30-37
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• 2011

In this paper, we propose a fast ICI suppression algorithm with adaptive channel estimation for the LTE-Advanced uplink system. In order to effectively remove phase noise and carrier frequency offset at time varying channel, we use the comb type pilot. The purpose is to improve performance by reducing computational complexity than conventional PNFS(Phase Noise & Frequency offset Suppression) algorithm. We reduce computational complexity by decreasing overlapping computation or unnecessary computation at conventional PNFS algorithm. Also, we propose an effective channel estimation method. We estimate and compensate multipath channel through the proposed adaptive channel estimation method. The BER performance of the proposed method is better about 0.5 dB than the conventional method at the Vehicular A channel.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.41 no.7
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• pp.21-29
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• 2004

Hot carrier degradation characteristics of Nano-scale CMOSFETs with dual gate oxide have been analyzed in depth. It is shown that, PMOSFET lifetime dominate the device lifetime than NMOSFET In Nano-scale CMOSFETs, that is, PMOSFET lifetime under CHC (Channel Hot Carrier) stress is much lower than NMOSFET lifetime under DAHC (Dram Avalanche Hot Carrier) stress. (In case of thin MOSFET, CHC stress showed severe degradation than DAHC for PMOSFET and DAHC than CHC for NMOSFET as well known.) Therefore, the interface trap generation due to enhanced hot hole injection will become a dominant degradation factor in upcoming Nano-scale CMOSFET technology. In case of PMOSFETs, CHC shows enhanced degradation than DAHC regardless of thin and thick PMOSFETs. However, what is important is that hot hole injection rather than hot electron injection play a important role in PMOSFET degradation i.e. threshold voltage increases and saturation drain current decreases due to the hot carrier stresses for both thin and thick PMOSFET. In case of thick MOSFET, the degradation by hot carrier is confirmed using charge pumping current method. Therefore, suppression of PMOSFET hot carrier degradation or hot hole injection is highly necessary to enhance overall device lifetime or circuit lifetime in Nano-scale CMOSFET technology

• Proceedings of the KIEE Conference
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• 1997.07f
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• pp.2058-2061
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• 1997

A main research topic in PWM inverter drive system is to reduce the generated acoustic noise. One method to reduce the acoustic noise is to cause the switching pattern to be random. This RPWM(Random Pulse Width Modulation) technique for voltage controlled inverters is a kind of good solutions for reduction of acoustic noise and suppression of vibration. This paper describes a carrier frequency modulated real-time RPWM inverter. Changing the carrier frequency randomly, the power spectrum of tile acoustic noise was spread over the wide-band area. And experimental results showed that emitted noise is much more comportable and less annoying

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.15 no.1
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• pp.1-6
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• 2002

The hot carried degradation in a metal oxide semiconductor device has been one of the most serious concerns for MOS-ULSI. In this paper, three types of LDD(lightly doped drain) structure for suppression of hot carried degradation, such as decreasing of performance due to spacer-induced degradation and increase of series resistance will be investigated. in this study, LDD-nMOSFETs used had three different drain structure, (1) conventional surface type LDD(SL), (2) Buried type LDD(BL), (3) Surface implantation type LDD(SI). As experimental results, the surface implantation the LDD structure showed that improved hot carrier lifetime to comparison with conventional surface and buried type LDD structures.

• Transactions of the Korean Society of Mechanical Engineers B
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• v.22 no.6
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• pp.813-822
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• 1998

The microexplosion of a slurry droplet was considered to be caused by the shell formation and the following pressure build-up in the shell which would be promoted by the suppression of evaporation, subsequent superheating and heterogeneous nucleation of liquid carrier. To closely investigate the pressure build-up and the heterogeneous nucleation, a numerical model was introduced by considering the internal temperature distributions with the shell formation, suppression of evaporation and pressure build-up inside. The microexplosion time was estimated by postulating the limit of superheat for heterogeneous nucleation. The simulation yielded a reasonably good agreement with experimental results for Al/n-heptane slurry droplets under various solid loadings.

• Journal of the Korean Institute of Illuminating and Electrical Installation Engineers
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• v.26 no.8
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• pp.35-41
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• 2012

As automation equipment and electronic device progresses, the importance of power quality is more increasing. This paper represents the analysis and suppression about the causes of trouble by the inverter's ON/OFF noise in plant in order to prevent damage resulting in a secondary damage to conduct precise diagnosis and effective noise reduction. The countermeasure as a reduced carrier frequency and the LC resonant filter had been applied and confirmed the effective results to solve the trouble of noise.