Proceedings of the KIEE Conference (대한전기학회:학술대회논문집)

The Korean Institute of Electrical Engineers (대한전기학회)
권호 표지

A study on Effect of Surface ion Implantation for Suppression of Hot carrier Degradation of LDD-nMOSFETs

LDD-nMOSFET의 핫 캐리어 열화 억제를 위한 표면 이온주입 효과에 대한 연구

  • 서용진 (대불대학교 전기전자공학부) ;
  • 안태현 (중앙대학교 전자전기공학부) ;
  • 김상용 (중앙대학교 전자전기공학부) ;
  • 김태형 (여주대학 전기과) ;
  • 김창일 (중앙대학교 전자전기공학부) ;
  • 장의구 (중앙대학교 전자전기공학부)
  • Published : 1998.11.28
Download PDF
⟨ Previous Next ⟩

Abstract

Reduction of hot carrier degradation in MOS devices has been one of the most serious concerns for MOS-ULSIs. In this paper, three types of LDD structure for suppression of hot carrier degradation, such as spacer-induced degradation and decrease of performance due to increase of series resistance will be investigated. LDD-nMOSFETs used in this study had three different drain structure. (1) conventional ${\underline{S}}urface$ type ${\underline{L}}DD$(SL), (2) ${\underline{B}}uried$ type ${\underline{L}}DD$(BL), (3) ${\underline{S}}urface$urface ${\underline{I}}mplantation$ type LDD(SI). As a result, the surface implantation type LDD structure showed that improved hot carrier lifetime to comparison with conventional surface and buried type LDD structure.

Keywords