• 한국신재생에너지학회:학술대회논문집
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• 2006.06a
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• pp.214-217
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• 2006

p-type 비정질 실리콘 에미터와 n-type 실리콘 기판의 계면에 intrinsic 비정질 실리콘을 증착함으로써 계면의 재결합을 억제하여 20%가 넘는 효율을 보이는 이종접합 태양전지가 Sanyo에 의해 처음 제시된 후 intrinsic layer에 대한 연구가 많이 진행되어 왔다. 하지만 p-type wafer의 경우는 n-type에 비해 intrinsic buffer의 효과가 미미하거나 오히려 특성을 저하시킨다는 보고가 있으며 그 이유로는 minority carrier에 대한 barrier가 상대적으로 낮다는 것과 partial epitaxy가 발생하기 때문으로 알려져 있다. 본 연구에서는 partial epitaxy를 억제하기 위한 방법으로 증착 온도를 낮추고 QSSPC를 사용하여 minority carrier lifetime을 측정함으로써 각 온도에 따른 passivation 특성을 평가하였다. 또한 SiH4에 H2를 섞어서 증착하였을 경우 각 dilution ratio(H2 flow/SiH4 flow)에서의 passivation 특성 또한 평가하였다. 기판 온도 $100^{\circ}C$에서 증착된 샘플의 lifetime이 가장 길었으며 그 이하와 이상에서는 lifetime이 감소하는 경향을 보였다 낮은 온도에서는 박막 자체의 결함이 증가하였기 때문이며 높은 온도에서는 partial epitaxy의 영향으로 추정된다. H2 dilution을 하여 증착한 샘플의 경우 SiH4만 가지고 증착한 샘플보다 훨씬 높은 lifetime을 가졌다 이 또한 박막 FT-IR결과로부터 H2 dilution을 한 경우 compact한 박막이 형성되는 것을 확인할 수 있었는데 radical mobility 증가에 의한 박막 특성 향상이 원인으로 생각된다.

• Journal of Periodontal and Implant Science
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• v.37 no.3
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• pp.511-522
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• 2007

Introduction : The purpose of this study was to evaluate the possibility of the acellular dermal matrix (ADM) as a barrier membrane for bone regeneration, and to evaluate the osteogenic effect of ADM as a carrier system for rhBMP-2 in the rat calvarial defect model. Materials and Methods: An 8-mm, calvarial, critical-size osteotomy defect was created in each of 60 male Spraque-Dawley rats(weight $250{\sim}300g$). Three groups of 20 animals, each received either rhBMP-2(0.025mg/ml) in an ADM carrier, ADM only, or negative surgical control. And each group was divided into 2- and 8-weeks healing intervals. The groups were evaluated by histologic and histomorphometric parameters(10 animals/group/healing intervals). Data were expressed as $means{\pm}standard$ deviations($m{\pm}SD$). Comparisons between experimental and control groups were made using two-way ANOVA and post hoc t-test. Comparisons between 2 weeks and 8 weeks were made using paired t-test. The level of statistical difference was defined as P< 0.05. Results : The ADM group and rhBMP-2/ADM group results in enhanced local bone formation in the rat calvarial defect at both 2 and 8 weeks. The amount of defect closure and new bone formation were significantly greater in the rhBMP-2/ADM group relative to ADM group(P<0.05). At 8 weeks, the majority of ADM in the defect was contracted, and integrated with surrounding host tissues. In addition, host cell infiltration and neovascularization of the ADM in the absence of an inflammatory response were observed, and the newly formed bone around ADM showed a continuous remodeling and consolidation. Conclusion : The results of the present study indicated that ADM may be used as a barrier membrane for bone regeneration and that may be employed as a delivery system for BMPs.

• Korean Journal of Materials Research
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• v.9 no.11
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• pp.1129-1136
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• 1999

TIN films were prepared on Si(100) substrate by ICP-CVD(inductive1y coupled plasma enhanced chemical vapor deposition) using TEMAT(tetrakis ethylmethamido titanium : Ti$[\textrm{N}\textrm{(CH)}_{3}\textrm{C}_{2}\textrm{H}_{5}]_{4}$) precursor at various deposition conditions. Phase, microstructure, and the electrical properties of TIN films were characterized by x-ray diffraction (XRD), x-ray photoelectron spectroscopy (XPS), high resolution transmission electron microscopy (HRTEM) and electrical measurements. Polycrystalline TiN films with B1 structure were grown at temperatures over $200^{\circ}C$. Preferentially oriented along TiN(111) films were obtained at temperatures over $300^{\circ}C$ with the flow rates of 10, 5, and 5 sccm for TEMAT, $\textrm{N}_{2}$ and Ar gas. The TiN/Si(100) interface was flat and no chemical reaction between TIN and $\textrm{SiO}_2$ was found. The resistivity, carrier concentration and the carrier mobility for the TiN sample prepared at $500^{\circ}C$ are 21 $\mu\Omega$cm, 9.5$\times\textrm{10}^{18}\textrm{cm}^{-3}$ and $462.6\textrm{cm}^{2}$/Vs, respectively.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.16 no.2
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• pp.325-330
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• 2012

In this paper, drain induced barrier lowering(DIBL) has been analyzed as one of short channel effects occurred in double gate(DG) MOSFET to be next-generation devices. Since Gaussian function been used as carrier distribution for solving Poisson's equation to obtain analytical solution of potential distribution, we expect our results using this model agree with experimental results. DIBL has been investigated according to projected range and standard projected deviation as variables of Gaussian function, and channel structure and channel doping intensity as device parameter. Since the validity of this analytical potential distribution model derived from Poisson's equation has already been proved in previous papers, DIBL has been analyzed using this model. Resultly, DIBL has been greatly changed for channel structure and doping concentration.

• The Transactions of The Korean Institute of Electrical Engineers
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• v.66 no.4
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• pp.659-665
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• 2017

Power semiconductor devices required the low on-resistance and high breakdown voltage. Wide band-gap materials opened a new technology of the power devices which promised a thin drift layer at an identical breakdown voltage. The diamond had the wide band-gap of 5.5 eV which induced the low power loss, high breakdown capability, low intrinsic carrier generation, and high operation temperature. We investigated the p-type pseudo-vertical diamond Schottky barrier diodes using a numerical simulation. The impact ionization rate was material to calculating the breakdown voltage. We revised the impact ionization rate of the diamond for adjusting the parallel-plane breakdown field at 10 MV/cm. Effects of the field plate on the breakdown voltage was also analyzed. A conventional diamond Schottky barrier diode without field plate exhibited the high forward current of 0.52 A/mm and low on-resistance of $1.71{\Omega}-mm$ at the forward voltage of 2 V. The simulated breakdown field of the conventional device was 13.3 MV/cm. The breakdown voltage of the conventional device and proposed devices with the $SiO_2$ passivation layer, anode field plate (AFP), and cathode field plate (CFP) was 680, 810, 810, and 1020 V, respectively. The AFP cannot alleviate the concentration of the electric field at the cathode edge. The CFP increased the breakdown voltage with evidences of the electric field and potential. However, we should consider the dielectric breakdown because the ideal breakdown field of the diamond is higher than that of the $SiO_2$, which is widely used as the passivation layer. The real breakdown voltage of the device with CFP decreased from 1020 to 565 V due to the dielectric breakdown.

• Journal of the Korean Institute of Illuminating and Electrical Installation Engineers
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• v.24 no.8
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• pp.32-39
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• 2010

Hydrogen is sustainable energy without environment pollution. In this study, experiments and analysis of hydrogen generation from gases methanol and ethanol using cylindrical barrier discharge reactor was carried out. The discharge reactor to generate hydrogen molecules used in this work is one type of Non-thermal Plasma (NTP) reactors and neon-transformer as power source to make a plasma was used. Hydrogen concentrations were measured as parameters of applied voltage, concentrations of methanol and ethanol, and flow rates of carrier gases($N_2$). Hydrogen generation increased according to applied voltage and produced largely in case of methanol compared with ethanol. It is thought that the reason is deeply related with those different chemical structures. Energy yield of hydrogen generation in case of ethanol decreases according to increasing applied voltage, but that in case of methanol has a peak at applied voltage of 22[kV] and decreased. Specifically, hydrogen generation increased with increasing applied voltage, but low voltage was better, which is the best parameter in the aspects of energy efficiency.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2011.10a
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• pp.878-881
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• 2011

In this paper, drain induced barrier lowering(DIBL) has been analyzed as one of short channel effects occurred in double gate(DG) MOSFET to be next-generation devices. Since Gaussian function been used as carrier distribution for solving Poisson's equation to obtain analytical solution of potential distribution, we expect our results using this model agree with experimental results. DIBL has been investigated according to projected range and standard projected deviation as variables of Gaussian function, and channel thickness and channel doping intensity as device parameter. Since the validity of this analytical potential distribution model derived from Poisson's equation has already been proved in previous papers, DIBL has been analyzed using this model.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.17 no.1
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• pp.145-150
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• 2013

This paper has presented the analysis for threshold voltage and drain induced barrier lowering among short channel effects occurred in subthreshold region for double gate(DG) MOSFET as next-generation devices, based on scaling theory. To obtain the analytical solution of Poisson's equation, Gaussian function has been used as carrier distribution to analyze closely for experimental results, and the threshold characteristics have been analyzed for device parameters such as channel thickness and doping concentration and projected range and standard projected deviation of Gaussian function. Since this potential model has been verified in the previous papers, we have used this model to analyze the threshold characteristics. As a result to apply scaling theory, we know the threshold voltage and drain induced barrier lowering are changed, and the deviation rate is changed for device parameters for DGMOSFET.

• Journal of the Society of Naval Architects of Korea
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• v.58 no.2
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• pp.66-72
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• 2021

As the demand for natural gas that satisfies environmental regulations increases, the quantities of natural gas cargo that carrier can load is also increasing. Natural gas is transported in a liquefied state at -163 ℃ to increase loading efficiency. Among several LNG CCS types, MARK-III types are generally adopted in terms of loading efficiency. The secondary barrier adhesives of the MARK-III, nevertheless, is subjected to tensile stress due to thermal contraction and tension in the environment. In terms of these reasons, local analysis of the adhesive to evaluate the stress state must be carried out. According to previous studies, local analysis is unavailable since material properties for secondary barrier adhesives have not been reported. Thus, in this study, the cryogenic tensile test and coefficient of thermal expansion of epoxy and polyurethane (PU15, PU45), which are most widely used at cryogenic temperatures, were experimentally analyzed. At cryogenic temperature, the mechanical behavior of the polyurethane adhesive was better than epoxy of the adhesive. the joint of FSB and epoxy adhesive of the secondary barrier has the maximum coefficient of thermal expansion difference at 25 ℃ and minimum at -150 ℃, respectively.

• Biomolecules & Therapeutics
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• v.27 no.3
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• pp.290-301
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• 2019

Paeonol has neuroprotective function, which could be useful for improving central nervous system disorder. The purpose of this study was to characterize the functional mechanism involved in brain transport of paeonol through blood-brain barrier (BBB). Brain transport of paeonol was characterized by internal carotid artery perfusion (ICAP), carotid artery single injection technique (brain uptake index, BUI) and intravenous (IV) injection technique in vivo. The transport mechanism of paeonol was examined using conditionally immortalized rat brain capillary endothelial cell line (TR-BBB) as an in vitro model of BBB. Brain volume of distribution (VD) of [$^3H$]paeonol in rat brain was about 6-fold higher than that of [$^{14}C$]sucrose, the vascular space marker of BBB. The uptake of [$^3H$]paeonol was concentration-dependent. Brain volume of distribution of paeonol and BUI as in vivo and inhibition of analog as in vitro studies presented significant reduction effect in the presence of unlabeled lipophilic compounds such as paeonol, imperatorin, diphenhydramine, pyrilamine, tramadol and ALC during the uptake of [$^3H$]paeonol. In addition, the uptake significantly decreased and increased at the acidic and alkaline pH in both extracellular and intracellular study, respectively. In the presence of metabolic inhibitor, the uptake reduced significantly but not affected by sodium free or membrane potential disruption. Similarly, paeonol uptake was not affected on OCTN2 or rPMAT siRNA transfection BBB cells. Interestingly. Paeonol is actively transported from the blood to brain across the BBB by a carrier mediated transporter system.