• Title/Summary/Keyword: Carbon nitride

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Surface modification and induced ultra high surface hardness by nitrogen ion implantation of low alloy steel

  • Olofinjana, A.O.;Bell, J.M.;Chen, Z.
    • Proceedings of the Korean Society of Tribologists and Lubrication Engineers Conference
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    • 2002.10b
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    • pp.157-158
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    • 2002
  • A surface hardenable low alloy carbon steel was implanted with medium energy (20 - 50KeV) $N_2^+$ ions to produced a modified hardened surface. The implantation conditions were varied and are given in several doses. The surface hardness of treated and untreated steels were measured using depth sensing ultra micro indentation system (UMIS). It is shown that the hardness of nitrogen ion implanted steels varied from 20 to 50GPa depending on the implantation conditions and the doses of implantation. The structure of the modified surfaces was examined by X-ray photoelectron spectroscopy (XPS). It was found that the high hardness on the implanted surfaces was as a result of formation of non-equilibrium nitrides. High-resolution XPS studies indicated that the nitride formers were essentially C and Si from the alloy steel. The result suggests that the ion implantation provided the conditions for a preferential formation of C and Si nitrides. The combination of evidences from nano-indentation and XPS, provided a strong evidence for the existence of $sp^3$ type of bonding in a suspected $(C,Si)_xN_y$ stoichiometry. The formation of ultra hard surface from relatively cheap low alloy steel has significant implication for wear resistance implanted low alloy steels.

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Optimization of Binder Burnout for Reaction Bonded Si3N4 Substrate Fabrication by Tape Casting Method

  • Park, Ji Sook;Lee, Hwa Jun;Ryu, Sung Soo;Lee, Sung Min;Hwang, Hae Jin;Han, Yoon Soo
    • Journal of the Korean Ceramic Society
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    • v.52 no.6
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    • pp.435-440
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    • 2015
  • It is a challenge from an industrial point of view to fabricate silicon nitride substrates with high thermal conductivity and good mechanical properties for power devices from high-purity Si scrap powder by means of thick film processes such as tape casting. We characterize the residual carbon and oxygen content after the binder burnout followed by nitridation as a function of the temperature in the temperature range of $300^{\circ}C-700^{\circ}C$ and the atmosphere in a green tape sample which consists of high-purity Si powder and polymer binders such as polyvinyl butyral and dioctyl phthalate. The optimum condition of binder burnout is suggested in terms of the binder removal temperature and atmosphere. If considering nitridation, the burnout of the organic binder in air compared to that in a nitrogen atmosphere could offer an advantage when fabricating reaction-bonded $Si_3N_4$ substrates for power devices to enable low carbon and oxygen contents in green tape samples.

Stress Analysis for Fiber Reinforced Composites under Indentation Contact Loading (압입접촉하중이 작용하는 섬유강화 복합재료의 응력해석)

  • Jang, Kyung-Soon;Kim, Tae-Woo;Kim, Chul;Woo, Sang-Kuk;Lee, Kee-Sung
    • Journal of the Korean Ceramic Society
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    • v.45 no.4
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    • pp.238-244
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    • 2008
  • Modeling and FEM analysis on Boron Nitride and/or Pyrolytic Carbon coating layers on SiC fibers under indentation contact loadings are investigated. Especially this study attempts to model the mechanical behavior of the SiC fibers with and without coatings. Tyranno S grade and Tyranno LoxM grade of SiC are selected for fiber and Boron Nitride and/or Pyrolytic Carbon as coating material. The modeling is performed by SiC fiber without coating layer, which includs single(BN or PyC) and double(BN-PyC or PyC-BN) coating layer. And then the analysis is performed by changing a type of coating layer, a type of fiber and coating sequence. In this study, the concepts of modeling and analysis techniques for optimum design of BN and PyC coating process on SiC fiber are shown. Results show that stresses are reduced when indentation contact loading applies on the material having lower elastic modulus.

Synthesis of Nanorod g-C3N3/Ag3PO4 Composites and Photocatalytic Activity for Removing Organic Dyes under Visible Light Condition

  • Se Hwan Park;Jeong Won Ko;Weon Bae Ko
    • Elastomers and Composites
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    • v.59 no.1
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    • pp.1-7
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    • 2024
  • Nanorod graphitic carbon nitride (g-C3N4) was synthesized by reacting melamine (C3H6N6) with trithiocyanuric acid (C3H3N3S3) in distilled water for 10 h at room temperature. The resulting mixture was calcined at 550℃ for 2 h in an electric furnace under an air atmosphere. Nanorod g-C3N4/Ag3PO4 composites were prepared by adding nanorod graphitic carbon nitride (g-C3N4) powder, silver nitrate (AgNO3), ammonia (NH3·H2O, 25.0-30.0%), and sodium hydrogen phosphate (Na3HPO4) to distilled water. The samples were characterized via X-ray diffraction, scanning electron microscopy, and Fourier-transform infrared spectroscopy. The photocatalytic activities of the nanorod g-C3N4/Ag3PO4 composites were demonstrated via the degradation of organic dyes, such as methylene blue and methyl orange, under blue light-emitting diode irradiation and evaluated using UV-vis spectrophotometry.

Selective Growth of Carbon Nanotubes using Two-step Etch Scheme for Semiconductor Via Interconnects

  • Lee, Sun-Woo;Na, Sang-Yeob
    • Journal of Electrical Engineering and Technology
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    • v.6 no.2
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    • pp.280-283
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    • 2011
  • In the present work, a new approach is proposed for via interconnects of semiconductor devices, where multi-wall carbon nanotubes (MWCNTs) are used instead of conventional metals. In order to implement a selective growth of carbon nanotubes (CNTs) for via interconnect, the buried catalyst method is selected which is the most compatible with semiconductor processes. The cobalt catalyst for CNT growth is pre-deposited before via hole patterning, and to achieve the via etch stop on the thin catalyst layer (ca. 3nm), a novel 2-step etch scheme is designed; the first step is a conventional oxide etch while the second step chemically etches the silicon nitride layer to lower the damage of the catalyst layer. The results show that the 2-step etch scheme is a feasible candidate for the realization of CNT interconnects in conventional semiconductor devices.

Electrochemical Non-Enzymatic Glucose Sensor based on Hexagonal Boron Nitride with Metal-Organic Framework Composite

  • Ranganethan, Suresh;Lee, Sang-Mae;Lee, Jaewon;Chang, Seung-Cheol
    • Journal of Sensor Science and Technology
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    • v.26 no.6
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    • pp.379-385
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    • 2017
  • In this study, an amperometric non-enzymatic glucose sensor was developed on the surface of a glassy carbon electrode by simply drop-casting the synthesized homogeneous suspension of hexagonal boron nitride (h-BN) nanosheets with a copper metal-organic framework (Cu-MOF) composite. Comprehensive analytical methods, including field-emission scanning electron microscopy (FE-SEM), Fourier-transform infrared spectroscopy (FT-IR), X-ray diffraction (XRD), cyclic voltammetry, electrochemical impedance spectroscopy, and amperometry, were used to investigate the surface and electrochemical characteristics of the h-BN-Cu-MOF composite. The FE-SEM, FT-IR, and XRD results showed that the h-BN-Cu-MOF composite was formed successfully and exhibited a good porous structure. The electrochemical results showed a sensor sensitivity of $18.1{\mu}A{\mu}M^{-1}cm^{-2}$ with a dynamic linearity range of $10-900{\mu}M$ glucose and a detection limit of $5.5{\mu}M$ glucose with a rapid turnaround time (less than 2 min). Additionally, the developed sensor exhibited satisfactory anti-interference ability against dopamine, ascorbic acid, uric acid, urea, and nitrate, and thus, can be applied to the design and development of non-enzymatic glucose sensors.

Joining of Silicon Nitride to Carbon Steel using an Active Metal Alloys (활성 납재를 이용한 질화규소/탄소강 접합)

  • Choe, Yeong-Min;Jeong, Byeong-Hun;Lee, Jae-Do
    • Korean Journal of Materials Research
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    • v.9 no.2
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    • pp.199-204
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    • 1999
  • As the engine design change to get high efficiency and performance of commercial diesel engine, surface wear of the cam follower becomes an important issues as applied load increasing at the contact face between cam follower and cam. Purpose of this study is the developing of the ceramic cam follower made of silicon nitride ceramic which is more wear resistant than the cast iron and sintered cam follower. Ceramic cam follower was made by direct brazing of thin ceramic disk to steel can follower body using active bracing alloy. Effect of joining condition on the interfacial phases and joining strength wer examined at bvarious joining temperatures, times, and cooling rates. Crowning resulted from the difference of thermal expansion coefficient after direct brazing without using any stress-relieving inter layer was measured. Interfacial phases are mainly titanium silicide and titanium nitride which are the products between active metal(Ti) in brazing alloy and silicon nitiride. Maximum joining strength of the ceramic metal joint, measured by DBS method, was 334MPa. Crowning(R) of the prototype ceramic cam follower was 1595mm. As machining for crowning is not necessary, production cost can be reduced.

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Preparation of Gallium Nitride Powders and Nanowires from a Gallium(III) Nitrate Salt in Flowing Ammonia

  • Jung, Woo-Sik
    • Bulletin of the Korean Chemical Society
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    • v.25 no.1
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    • pp.51-54
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    • 2004
  • Gallium nitride (GaN) powders were prepared by calcining a gallium(III) nitrate salt in flowing ammonia in the temperature ranging from 500 to 1050 $^{\circ}C$. The process of conversion of the salt to GaN was monitored by X-ray diffraction and $^{71}Ga$ MAS (magic-angle spinning) NMR spectroscopy. The salt decomposed to ${\gamma}-Ga_2O_3$ and then converted to GaN without ${\gamma}-{\beta}Ga_2O_3$ phase transition. It is most likely that the conversion of ${\gamma}-Ga_2O_3$ to GaN does not proceed through $Ga_2O$ but stepwise via amorphous gallium oxynitride ($GaO_xN_y$) as intermediates. The GaN nanowires and microcrystals were obtained by calcining the pellet containing a mixture of ${\gamma}-Ga_2O_3$ and carbon in flowing ammonia at 900 $^{\circ}C$ for 15 h. The growth of the nanowire might be explained by the vapor-solid (VS) mechanism in a confined reactor. Room-temperature photoluminescence spectra of as-synthesized GaN powders obtained showed the emission peak at 363 nm.

Formation of Ti-B-N-C Ceramic Composite Materials via a Gas-Solid Phase Reaction

  • Yoon, Su-Jong
    • Korean Journal of Materials Research
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    • v.16 no.1
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    • pp.50-57
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    • 2006
  • Phase mixtures of Titanium boride, nitride, and carbide powder were produced by the reduction of a mixture of titanium and boron oxides with carbon via a gas-solid phase reaction. Boron oxides produce a vapour phase or decompose to a metal sub-oxide gaseous species when reduced at elevated temperature. The mechanism of BO sub-oxide gas formation from $B_2O_3$ and its subsequent reduction to titanium diboride for the production of uniform size hexagonal platelets is explained. These gaseous phases are critical for the formation of boride, nitride and carbide ceramics. For the production of ceramic phase composite microstructures, the nitrogen partial pressure was the most critical factor. Some calculated equilibrium phase fields has been verified experimentally. The theoretical approach therefore identifies conditions for the formation of phase mixtures. The thermodynamic and kinetic factors that govern the phase constituents are also discussed.

Structural Studies of Thin Film Boron Nitride by X-ray Photoelectron Spectroscopy

  • Kim, Jong-Seong
    • Journal of Sensor Science and Technology
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    • v.5 no.1
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    • pp.51-56
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    • 1996
  • Structural properties of rf sputtered boron nitride films were studied as a function of deposition parameters such as nitrogen pressure, substrate temperature and substrate bias using X-ray photoelectron spectroscopy and Auger electron spectroscopy. Composition and information on chemical bonding of resultant films was determined by XPS. XPS core level spectra showed that ratio of boron to nitrogen varied from 3.11 to 1.45 with respect to partial nitrogen pressure. Curve fitting of XPS spectra revealed three kinds of bonding mechanism of boron in the films. XPS peak positions of both B 1s and N 1s shifted to higher energy with higher nitrogen pressure as well as increase in substrate bias voltage. AES was used to see possible contamination of films by carbon or oxygen as well.

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