• Carbon letters
• /
• v.14 no.4
• /
• pp.247-250
• /
• 2013

In this study, we present a facile method of fabricating graphene oxide (GO) films on the surface of polyimide (PI) via layer-by-layer (LBL) assembly of charged GO. The positively charged amino-phenyl functionalized GO (APGO) is alternatively complexed with the negatively charged GO through an electrostatic LBL assembly process. Furthermore, we investigated the water vapor transmission rate and oxygen transmission rate of the prepared (reduced GO $[rGO]/rAPGO)_{10}$ deposited PI film (rGO/rAPGO/PI) and pure PI film. The water vapor transmission rate of the GO and APGO-coated PI composite film was increased due to the intrinsically hydrophilic property of the charged composite films. However, the oxygen transmission rate was decreased from 220 to 78 $cm^3/m^2{\cdot}day{\cdot}atm$, due to the barrier effect of the graphene films on the PI surface. Since the proposed method allows for large-scale production of graphene films, it is considered to have potential for utilization in various applications.

• Bulletin of the Korean Chemical Society
• /
• v.34 no.5
• /
• pp.1473-1476
• /
• 2013

Solution-based deposition of $CuIn_xGa_{1-x}Se_2$ (CIGSe) thin films is well known non-vacuum process for the fabrication of CIGSe solar cells. However, due to the usage of organic chemicals in the preparation of CIG precursor solutions, the crystallization of the polycrystalline CIGSe and the performance of CIGSe thin film solar cells were significantly affected by the carbon residues from the organic chemicals. In this work, we have tried to eliminate the carbon residues in the CIG precursor thin films efficiently by using soft-annealing process. By adjusting soft-annealing temperature, it is possible to control the amount of carbon residues in CIG precursor thin films. The reduction of the carbon residues in CIG precursors by high temperature soft-annealing improves the grain size and morphology of polycrystalline CIGSe thin films, which are also closely related with the electrical properties of CIGSe thin film solar cells.

• Textile Coloration and Finishing
• /
• v.24 no.4
• /
• pp.313-320
• /
• 2012

For the preparation of hardened films which can be applied as a binder for flame-resistant materials such as silica, linseed oil was subjected to a low temperature plasma treatment with argon, or oxygen gas. The film was produced much faster than so-called drying of oil in air. The SEM analysis for silica particles embedded in the hardened film after plasma treatment showed that the silica particles were immobilized on substrate and were evenly dispersed. The FT-IR spectral analysis for the plasma-treated linseed oil films demonstrated that the radicals which were formed during the plasma treatments caused the linseed oil to be cross-linked, and the plasmas attacked carbon chains of the oil randomly without focusing on specific vulnerable bonds such carbon double and carbonyl bonds intensively unless exposure times of the plasmas were prolonged too much, while the cross-linking of the air-dried film was considered to occur at the well-known typical sites, i.e., carbon-carbon double bond and ${\alpha}$-methylene carbon. Burning times, as a measure of flame/fire resistance, of silica-filled cellulose substrates, increased with increasing contents of silica.

• Bulletin of the Korean Chemical Society
• /
• v.26 no.9
• /
• pp.1403-1409
• /
• 2005

A sensitive and selective electrochemical method was developed for the amperometric determination of ascorbic acid (AA) at a glassy carbon electrode (GCE) modified with single-wall carbon nanotubesdihexadecyl hydrogen phosphate (SWNT-DHP) composite film. The SWNT-DHP composite film modified GCE was characterized with SEM. The SWNT-DHP composite film modified GCE exhibited excellent electrocatalytic behaviors toward the oxidation of AA. Compared with the bare GCE, the oxidation current of AA increased greatly and the oxidation peak potential of AA shifted negatively to about -0.018 V (vs. SCE) at the SWNT-DHP composite film modified GCE. The experimental parameters, which influence the oxidation current of AA, were optimized. Under the optimal conditions, the amperometric measurements were performed at a applied potential of -0.015 V and a linear response of AA was obtained in the range from 4 ${\times}$ $10^{-7}$ to 1 ${\times}$ $10^{-4}$ mol $L^{-1}$ and with a limit of detect (LOD) of 1.5 ${\times}$ $10^{-7}$ mol $L^{-1}$. The interferences study showed that the SWNT-DHP composite film modified GCE exhibited good sensitivity and excellent selectivity in the presence of high concentration uric acid and dopamine. The proposed procedure was successfully applied to detect AA in human urine samples with satisfactory results.

• Journal of the Korean Chemical Society
• /
• v.45 no.4
• /
• pp.351-356
• /
• 2001

Planarization of the free-standing diamond film surface as smooth as possible could be obtained by using the hydrogen plasma etching with the diffusion of the carbon species into the metal alloy (Fe, Cr, Ni). For this process, we placed the free-standing diamond film between the metal alloy and the Mo substrate like a metal-diamond-molybdenum (MDM) sandwich. We set the sandwich-type MDM in a microwave-plasma-enhanced chemical vapor deposition (MPECVD) system. The sandwich-type MDM was heated over ca. 1000 $^{\circ}C$ by using the hydrogen plasma. We call this process as the hydrogen plasma etching with carbon diffusion process. After etching the free-standing diamond film surface, we investigated surface roughness, morphologies, and the incorporated impurities on the etched diamond film surface. Finally, we suggest that the hydrogen plasma etching with carbon diffusion process is an adequate etching technique for the fabrication of the diamond film surface applicable to electronic devices.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.36 no.6
• /
• pp.588-593
• /
• 2023

The advantage of OTFT technology is that large-area circuits can be manufactured on flexible substrates using a low-cost solution process such as inkjet printing. Compared to silicon-based inorganic semiconductor processes, the process temperature is lower and the process time is shorter, so it can be widely applied to fields that do not require high electron mobility. Materials that have utility as electrode materials include carbon that can be solution-processed, transparent carbon thin films, and metallic nanoparticles, etc. are being studied. Recently, a technology has been developed to facilitate charge injection by coating the surface of the Al electrode with solution-processable titanium oxide (TiOx), which can greatly improve the performance of OTFT. In order to commercialize OTFT technology, an appropriate method is to use a complementary circuit with excellent reliability and stability. For this, insulators and channel semiconductors using organic materials must have stability in the air. In this study, carbon-doped Mo (MoC) thin films were fabricated with different graphite target power densities via unbalanced magnetron sputtering (UBM). The influence of graphite target power density on the structural, surface area, physical, and electrical properties of MoC films was investigated. MoC thin films deposited by the unbalanced magnetron sputtering method exhibited a smooth and uniform surface. However, as the graphite target power density increased, the rms surface roughness of the MoC film increased, and the hardness and elastic modulus of the MoC thin film increased. Additionally, as the graphite target power density increased, the resistivity value of the MoC film increased. In the performance of an organic thin film transistor using a MoC gate electrode, the carrier mobility, threshold voltage, and drain current on/off ratio (I_on/I_off) showed 0.15 cm²/V·s, -5.6 V, and 7.5×10⁴, respectively.

• Journal of the Korean institute of surface engineering
• /
• v.36 no.4
• /
• pp.296-300
• /
• 2003

Extended cylindrical magnetron sputtering system with rotating 600-mm long and 90-mm diameter graphite cathode and pulsed power supply voltage generator were developed and fabricated. Time-dependent Langmuir probe characteristics as well as carbon films thickness were measured. It was shown that ratio of ions flux to carbon atoms flux for pulsed magnetron discharge mode was equal to $\Phi_{i}$ $\Phi$sub C/ = 0.2. It did not depend on the discharge current in the range of $I_{d}$ / = 10∼60 A since both the plasma density and the film deposition rate were found approximately proportional to the discharge current. In spite of this fact carbon film structure was found to be strongly dependent on the discharge current. Grain size increased from 100 nm at $I_{d}$ = 10∼20 A to 500 nm at $I_{d}$ = 40∼60 A. To deposit fine-grained hard nanocrystalline or amorphous carbon coating current regime with $I_{d}$ = 20 A was chosen. Pulsed negative bias voltage ($\tau$= 40 ${\mu}\textrm{s}$, $U_{b}$ = 0∼10 ㎸) synchronized with magnetron discharge pulses was applied to a substrate and voltage of $U_{b}$ = 3.4 ㎸ was shown to be optimum for a hard carbon film deposition. Lower voltages were not sufficient for amorphization of a growing graphite film, while higher voltages led to excessive ion bombardment and effects of recrystalization and graphitization.

• Journal of Powder Materials
• /
• v.24 no.3
• /
• pp.248-253
• /
• 2017

In this study, we investigate the effect of the diffusion barrier and substrate temperature on the length of carbon nanotubes. For synthesizing vertically aligned carbon nanotubes, thermal chemical vapor deposition is used and a substrate with a catalytic layer and a buffer layer is prepared using an e-beam evaporator. The length of the carbon nanotubes synthesized on the catalytic layer/diffusion barrier on the silicon substrate is longer than that without a diffusion barrier because the diffusion barrier prevents generation of silicon carbide from the diffusion of carbon atoms into the silicon substrate. The deposition temperature of the catalyst and alumina are varied from room temperature to $150^{\circ}C$, $200^{\circ}C$, and $250^{\circ}C$. On increasing the substrate temperature on depositing the buffer layer on the silicon substrate, shorter carbon nanotubes are obtained owing to the increased bonding force between the buffer layer and silicon substrate. The reason why different lengths of carbon nanotubes are obtained is that the higher bonding force between the buffer layer and the substrate layer prevents uniformity of catalytic islands for synthesizing carbon nanotubes.

• Proceedings of the Materials Research Society of Korea Conference
• /
• 1999.11a
• /
• pp.154-154
• /
• 1999

• Composites Research
• /
• v.33 no.3
• /
• pp.161-168
• /
• 2020

In this paper, we have studied the mechanical properties of thermoplastic carbon fiber fabric composites with spread technology and compression molding temperature were investigated. Carbon fiber reinforcement composites were fabricated using commercial carbon fiber fabrics and spread carbon fiber fabrics. Mechanical properties of the commercial carbon fiber composites (CCFC) and spread carbon fiber composites (SCFC) according to compression molding temperatures were investigated. Thermal properties of the polypropylene film were examined by rheometer, differential scanning calorimetry, thermal gravimetric analysis. Tensile, flexural and Inter-laminar shear test. Commercial carbon fiber reinforcement composites and spread carbon fiber composites were fabricated at 200~240℃ above the melting temperature of the polypropylene film. Impregnation properties according to compression molding temperature of the polypropylene film were investigated by scanning electron microscopy. As a result, as the compression molding temperature was increased, the viscosity of the polypropylene film was decreased. The mechanical properties of the compression molding temperature of 230℃ spread carbon fiber composite was superior.