• 한국재료학회지
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• 제19권2호
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• pp.61-67
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• 2009

Electrolessly deposited Co (Re,P) was investigated as a possible capping layer for Cu wires. 50 nm Co (Re,P) films were deposited on Cu/Ti-coated silicon wafers which acted as a catalytic seed and an adhesion layer, respectively. To obtain the optimized bath composition, electroless deposition was studied through an electrochemical approach via a linear sweep voltammetry analysis. The results of using this method showed that the best deposition conditions were a $CoSO_4$ concentration of 0.082 mol/l, a solution pH of 9, a $KReO_4$ concentration of 0.0003 mol/l and sodium hypophosphite concentration of 0.1 mol/L at $80^{\circ}C$. The thermal stability of the Co (Re,P) layer as a barrier preventing Cu was evaluated using Auger electron spectroscopy and a Scanning calorimeter. The measurement results showed that Re impurities stabilized the h.c.p. phase up to $550^{\circ}C$ and that the Co (Re,P) film efficiently blocked Cu diffusion under an annealing temperature of $400^{\circ}C$ for 1hr. The good barrier properties that were observed can be explained by the nano-sized grains along with the blocking effect of the impurities at the fast diffusion path of the grain boundaries. The transformation temperature from the amorphous to crystal structure is increased by doping the Re.

• 반도체디스플레이기술학회지
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• 제6권3호
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• pp.19-23
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• 2007

The NiSi is very promising candidate for the metallization in 45 nm CMOS process such as FUSI(fully silicided) gate and source/drain contact because it exhibits non-size dependent resistance, low silicon consumption and mid-gap workfunction. Ni film was first deposited by using ALD (atomic layer deposition) technique with Bis-Ni precursor and $H_2$ reactant gas at $220^{\circ}C$ with deposition rate of $1.25\;{\AA}/cycle$. The as-deposited Ni film exhibited a sheet resistance of $5\;{\Omega}/{\square}$. RTP (repaid thermal process) was then performed by varying temperature from $400^{\circ}C$ to $900^{\circ}C$ in $N_2$ ambient for the formation of NiSi. The process temperature window for the formation of low-resistance NiSi was estimated from $600^{\circ}C$ to $800^{\circ}C$ and from $700^{\circ}C$ to $800^{\circ}C$ with and without Ti capping layer. The respective sheet resistance of the films was changed to $2.5\;{\Omega}/{\square}$ and $3\;{\Omega}/{\square}$ after silicidation. This is because Ti capping layer increases reaction between Ni and Si and suppresses the oxidation and impurity incorporation into Ni film during silicidation process. The NiSi films were treated by additional thermal stress in a resistively heated furnace for test of thermal stability, showing that the film heat-treated at $800^{\circ}C$ was more stable than that at $700^{\circ}C$ due to better crystallinity.

• 한국자기학회:학술대회 개요집
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• 한국자기학회 2003년도 somma/kms meeting
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• pp.64-64
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• 2003

• 전기전자학회논문지
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• 제22권4호
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• pp.1226-1229
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• 2018

본 연구에서는 이온주입 된 4H-탄화규소(SiC) 에피 층 위에 환원된 그래핀 산화물 (r-GO)을 보호 층으로 적용하여 고온 열처리 공정 중 발생하는 표면 거칠기 악화를 개선하였다. 실험에 사용 된 4H-SiC 에피 층은 $4^{\circ}$ off-axis n-형 4H-SiC 기판 위에 $10{\mu}m$ 두께로 성장되었다. $n^+$-형 4H-SiC 층을 제공하기 위해 $1.73{\times}10^{15}cm^{-2}$ 농도의 질소를 고온 고에너지 이온주입 공정으로 주입하였고, 보호 층으로 사용한 r-GO는 스프레이 코팅 방식으로 4H-SiC 층 위에 형성하였다. r-GO를 보호 층으로 적용 한 결과, 적용하지 않은 시료에 비해 고온 열처리 후 표면 거칠기 (RMS)가 10배 개선되었으며, 전기적 측정으로 추출한 누설 전류를 통해 표면 거칠기 개선으로 표면 상태가 완화되었음을 확인하였다.

• Journal of Information Display
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• 제10권3호
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• pp.117-120
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• 2009

A new crystallization method for amorphous silicon, called selective area heating (SAH), was proposed. The purpose of SAH is to improve the reliability of amorphous silicon films with extremely low thermal budgets to the glass substrate. The crystallization time shortened from that of the conventional solid-phase crystallization method. An isolated thin heater for SAH was fabricated on a quartz substrate with a Pt layer. To investigate the crystalline properties, Raman scattering spectra were used. The crystalline transverse optic phonon peak was at about 519 $cm^{-1}$, which shows that the films were crystallized. The effect of the crystallization time on the varying thickness of the $SiO_2$ films was investigated. The crystallization area in the 400nm-thick $SiO_2$ film was larger than those of the $SiO_2$ films with other thicknesses after SAH at 16 W for 2 min. The results show that a $SiO_2$ capping layer acts as storage layer for thermal energy. SAH is thus suggested as a new crystallization method for large-area electronic device applications.

• 한국재료학회지
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• 제13권7호
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• pp.460-464
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• 2003

Ni and Ti films were deposited by the thermal evaporator, and then annealed in the N$_2$ ambient at 300-80$0^{\circ}C$ in a RTA(rapid thermal annealing) system. Four point probe, AEM, FESEM, AES, and XPS were used to study the effects of Ti-capping layers on the thermal stability of NiSi thin films. The Ti-capped NiSi was stable up to $700^{\circ}C$ for 100 sec. RTA, while the uncapped NiSi layers showed high sheet resistance after $600^{\circ}C$. These results were due to that the Ni in-diffusion and Si out-diffusion were retarded by the capping layer, resulting in the suppression of the formation of NiSi$_2$and Si grains at the surface.

• 한국재료학회지
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• 제17권2호
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• pp.86-90
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• 2007

The organic-capped Ba-Ti-O nanolayers were coated uniformly on spherical Ni particles for multilayer ceramic capacitor (MLCC) applications via the formation of Ti-hydroxide nano-coating layers and their subsequent reaction with Ba-stearate at $180^{\circ}C$. The capping of organic shell on oxide coating layer changed the hydrophilic surface structure into hydrophobic one, which significantly improved the dispersion behavior in hydrophobic solvents such as terpineol and butanol. In addition, the uniform coating of Ba-Ti-O layer was advantageous to prevent Ni oxidation. This method provides a useful chemical route to fabricate organic-soluble Ba-Ti-O coated Ni particles for a highly integrated passive component.

• 한국자기학회:학술대회 개요집
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• 한국자기학회 2007년도 The 1st International Symposium on Advanced Magnetic Materials
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• pp.317.1-317.1
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• 2007

• 한국농공학회논문집
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• 제58권2호
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• pp.1-9
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• 2016

This study aims to assess the effectiveness of activated carbon (AC) and crushed concrete (CC) as capping material to block the release of nitrogen, phosphorus, and organic substance from reservoir sediments. The efficiency of AC and CC as capping material was evaluated in a reactor in which a 1 or 3 cm thick layer of capping materials was placed on the sediments collected from Mansu reservoir in Anseong-city. Dissolved oxygen (DO) concentration, total nitrogen (T-N), total phosphorus (T-P), and chemical oxygen demand (COD) concentration in reservoir water above the uncapped sediments and capping material were monitored for 45 days. The release rate of T-N was in the following increasing order: AC 3 cm ($1.18mg/m^2{\cdot}d$) < CC 1 cm ($2.66mg/m^2{\cdot}d$) < AC 1 cm ($2.94mg/m^2{\cdot}d$) < CC 3 cm ($3.42mg/m^2{\cdot}d$) < uncapped ($4.59mg/m^2{\cdot}d$). The release rate of T-P was in the following increasing order: AC 3 cm ($0mg/m^2{\cdot}d$) $${\approx_-}$$ CC 3 cm ($0mg/m^2{\cdot}d$) < CC 1 cm ($0.03mg/m^2{\cdot}d$) < AC 1 cm capped ($0.07mg/m^2{\cdot}d$) < uncapped ($0.24mg/m^2{\cdot}d$). The release of nitrogen and phosphorus were effectively blocked by AC capping of 3 cm thickness, and CC capping of 3 cm thickness effectively controlled the release of phosphorus. The order of increasing COD release rate was as follows: AC 3 cm ($0mg/m^2{\cdot}d$) $${\approx_-}$$ CC 3 cm ($0mg/m^2{\cdot}d$) < CC 1 cm ($5.03mg/m^2{\cdot}d$) < AC 1 cm ($7.28mg/m^2{\cdot}d$) < uncapped ($10.05mg/m^2{\cdot}d$), indicating that AC and CC capping effectively interrupted the release of organic contaminants from the sediments. It was concluded that AC and CC could effectively block the release of T-N, T-P and COD release from contaminated reservoir sediments.

• 한국재료학회지
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• 제13권5호
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• pp.279-284
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• 2003

The $CoSi_2$ process is widely employed in a salicide as well as an ohmic layer process. In this experiment, we investigated the characteristics of $CoSi_2$ films by combinations of I-type (TiN 100$\AA$/Co 150$\AA$), II-type(TiN 100$\AA$/Co 150$\AA$/Ti 50$\AA$), III-type(Ti 100$\AA$/Co 150$\AA$/Ti 50$\AA$), and IV-type(Ti 100$\AA$/Co 150$\AA$/Ti 100$\AA$). Sheet resistances of $CoSi_2$ show the lowest resistance with 2.9 $\Omega$/sq. in a TiN/Co condition and much higher resistances in conditions simultaneously applying Ti capping layers and Ti interlayers. Though we couldn't observe a $CoSi_2$roughness dependence on the film stacks from RMS values, Ti capping layers turned into 78∼94$\AA$ thick TiN layers of (200) preferred orientation at $N_2$ambient. In addition, Ti interlayers helped to form the epitaxial $CoSi_2$with (200) preferred orientation and ternary compounds of Co-Ti-Si. We propose that film structures of II-type and III-type may be appropriate in the salicide process and the ohmic layer process from the viewpoint of Co diffusion kinetics and the CoSi$_2$epitaxy.