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http://dx.doi.org/10.3740/MRSK.2003.13.5.279

Characteristics of Cobalt Silicide by Various Film Structures  

Cheong, Seong-Hwee (Department of Materials Science and Engineering, The University of Seoul)
Song, Oh-Sung (Department of Materials Science and Engineering, The University of Seoul)
Publication Information
Korean Journal of Materials Research / v.13, no.5, 2003 , pp. 279-284 More about this Journal
Abstract
The $CoSi_2$ process is widely employed in a salicide as well as an ohmic layer process. In this experiment, we investigated the characteristics of $CoSi_2$ films by combinations of I-type (TiN 100$\AA$/Co 150$\AA$), II-type(TiN 100$\AA$/Co 150$\AA$/Ti 50$\AA$), III-type(Ti 100$\AA$/Co 150$\AA$/Ti 50$\AA$), and IV-type(Ti 100$\AA$/Co 150$\AA$/Ti 100$\AA$). Sheet resistances of $CoSi_2$ show the lowest resistance with 2.9 $\Omega$/sq. in a TiN/Co condition and much higher resistances in conditions simultaneously applying Ti capping layers and Ti interlayers. Though we couldn't observe a $CoSi_2$roughness dependence on the film stacks from RMS values, Ti capping layers turned into 78∼94$\AA$ thick TiN layers of (200) preferred orientation at $N_2$ambient. In addition, Ti interlayers helped to form the epitaxial $CoSi_2$with (200) preferred orientation and ternary compounds of Co-Ti-Si. We propose that film structures of II-type and III-type may be appropriate in the salicide process and the ohmic layer process from the viewpoint of Co diffusion kinetics and the CoSi$_2$epitaxy.
Keywords
cobalt silicide; interlayers; capping layers; ohmic layer; TiN; Ti; salicide;
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