• 한국정보통신학회:학술대회논문집
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• 한국해양정보통신학회 2002년도 추계종합학술대회
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• pp.784-787
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• 2002

Sol-gel 법으로 PLT(28) 박막을 제작하여, 박막의 구조적 및 전기적 특성을 조사하였다. XRD와 AFM 관찰결과, $650^{\circ}C$에서 annealing 된 박막은 완전한 perovskite 구조를 가지며 표면거칠기도 22$\AA$ 으로 양호한 값을 나타내었다. Pt/TiO$_{x}$SiO2/Si 기판위에 PLT(28) 박막을 증착시켜 planar 형태의 캐패시터를 제작하여 전기적 특성을 조사하였다. 그 결과, PLT(28) 박막은 상유전상을 가지며,10kHz에서 비유전률과 유전손실은 761 과 0.024 이었다. 또, 5V에서 전하축적 밀도와 누설전류밀도는 각각 134fC/$\mu$m2 과 1.01 $\mu$A/cm2 이었다. 이로부터, PLT(28) 박막이 차세대 DRAM 용 캐패시터 절연막으로 사용될 수 있는 유망한 재료라고 생각된다.다.

• 전력전자학회논문지
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• 제26권2호
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• pp.82-89
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• 2021

This study proposes a DAB two-stage series structure with insulated bidirectional DC-DC converter for two-way power transfer between the renewable energy of high voltages (1 kV and above). The proposed circuit transforms the existing DAB converter into a two-stage series structure to reduce the pressure in the switch. The problem of power imbalance occurring in the design of the DAB converter second-stage series is improved by applying the cell balancing method circuit and the common mode coupled inductor using an external flying capacitor instead of reflecting the existing improvement measures, voltage balance control, and inductor current control. In addition, a no-load supercharging sequence is proposed in high voltages and high-speed switching by using the fixed duty output method. This study presents the analysis results through the structure of the proposed circuit, the principle of improving the power imbalance problem, and simulations. Prototypes were manufactured to meet the specifications of input/output voltage of 1700 V, maximum load of 65 kW, and switching frequency of 51kHz, and the validity of the topology was verified using the experimental results and efficiency data.

• Structural Engineering and Mechanics
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• 제14권5호
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• pp.521-542
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• 2002

Application of piezoceramic materials in actuation and sensing of vibration is of current interest. Potential and more popular applications of piezoceramics are probably in the field of active vibration control. However, the objective of this work is to investigate the effect of shunted piezoceramics as passive vibration control devices when bonded to a host structure. Resistive shunting of a piezoceramic bonded to a cantilevered duralumin beam has been investigated. The piezoceramic is connected in parallel to an electrical network comprising of resistors and inductors. The piezoceramic is a capacitor that stores and discharges electrical energy that is transformed from the mechanical motion of the structure to which it is bonded. A resistor across the piezoceramic would be termed as a resistively shunted piezoceramic. Similarly, an inductor across the piezoceramic is termed as a resonantly shunted piezoceramic. In this study, the effect of resistive shunting on the nature of damping enhancement to the host structure has been investigated. Analytical studies are presented along with experimental results.

• Applied Microscopy
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• 제48권1호
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• pp.27-32
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• 2018

Barium titanate ($BaTiO_3$) nanoparticle is one of the most promising materials for future multi-layer ceramic capacitor and ferroelectric random access memory. It is well known that electrical property of nanoparticles depends on the atomistic structure. Although surface may possibly have an impact on the atomistic structure, reconstructed structure at the surface has not been widely investigated. In the present study, Ba-ion position near surface in a $BaTiO_3$ nanoparticle has been quantitatively characterized by scanning transmission electron microscopy. It was found that some Ba ions at the surface were greatly displaced in non-uniform directions.

• 반도체디스플레이기술학회지
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• 제14권2호
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• pp.41-45
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• 2015

From 20nm technology node, the finFET has become standard device for ULSI's. However, the finFET process made stacking gate non-volatile memory obsolete. Some reported capacitor-less DRAM structure by utilizing the FBE. We present possible non-volatile memory device structure similar to the dual gate MOSFET. One of the gates is left floating. Since body of the finFET is only 40nm thick, control gate bias can make electron tunneling through the floating gate oxide which sits across the body. For programming, gate is biased to accumulation mode with few volts. Simulation results show that the programming electron current flows at the interface between floating gate oxide and the body. It also shows that the magnitude of the programming current can be easily controlled by the drain voltage. Injected electrons at the floating gate act similar to the body bias which changes the threshold voltage of the device.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2005년도 추계학술대회 논문집 Vol.18
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• pp.130-131
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• 2005

In the era of submicron devices, super ultra thin gate oxide characteristics are required. Titanium silicide process has studied gate oxide reliability and dielectric strength characteristics as the composition of gate electrode. In this study the author observed process characteristics on MOS structure. In view point of the process characteristics of MOS capacitor, the oxygen & Ti, Si2 was analyzed by SIMS analysis on before and after annealing with 1,2 step silicidation, the Ti contents[Count/sec]of $9.5{\times}1018$ & $6.5{\times}1018$ on before and after 2'nd anneal. The oxygen contents[Count/sec] of $4.3{\times}104$ & $3.65{\times}104$, the Si contents[Count/sec] of $4.2{\times}104$ & $3.7{\times}104$ on before and after 2'nd anneal. The rms value[A] was 4.98, & 4.03 on before and after 2'nd anneal.

• Journal of electromagnetic engineering and science
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• 제6권3호
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• pp.171-175
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• 2006

In this paper, a new semi-lumped low-pass filter with three finite attenuation poles at stopband is presented. The new structure is composed of a pair of symmetrical parallel coupled-line and a shunted capacitor. With this configuration, three finite attenuation poles can be available for 2nd, 3rd, and 4th harmonics suppression. The research method is based on transmission-line model for tuning the attenuation poles. In order to examine the feasibility of the proposed structure, a low-pass filter based on microstrip structure with harmonics suppression is designed, fabricated, and measured. The experimental results of the fabricated circuit agree well with the simulation and analytical ones.

• 전력전자학회:학술대회논문집
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• 전력전자학회 2004년도 추계학술대회 논문집
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• pp.49-53
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• 2004

High density power supply technology has been researched over the last few years. In this paper, integrated LLCT(Inductor-Inductor-Capacitor-Transformer) structure is described for use in the half-bridge series resonant converter. The structure is analysed by means of FEMM(Finite Element Method Magnetics) and the experimental results of an U structure for a 300W converter we presented.

• Korean Chemical Engineering Research
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• 제51권3호
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• pp.308-312
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• 2013

NaOH 화학적 활성화법을 사용하여 야자각 차로부터 고 비표면적과 미세기공이 발달된 활성탄을 제조하였다. 활성탄제조 공정은 탄화과정에서 활성화 약품과 야자각 차의 비율과 불활성 기체 유량과 같은 실험변수들을 분석함으로서 수행되었다. 이와 같은 NaOH 화학적 활성화에 의한 2,481 $m^2/g$의 고 비표면적과 2.32 nm의 평균 기공크기를 갖는 활성탄이 얻어졌다. 양극으로 $LiMn_2O_4$, $LiCoO_2$와 음극으로 제조된 활성탄을 사용하여 하이브리드 커패시터의 전기화학적 성능을 조사하였다. $LiPF_6$, $TEABF_4$의 유기 전해질을 사용한 하이브리드 커패시터의 전기화학적 거동은 정전류 충방전, 순환 전류 전압법, 사이클과 누설전류 테스트에 의해 특성화 되었다. $LiMn_2O_4$/AC 전극을 사용한 하이브리드 커패시터가 다른 하이브리드 시스템 보다 더 좋은 충방전 성능을 보였으며, 출력밀도 1,448 W/kg와 131 Wh/kg의 고 에너지 밀도를 전달할 수 있다.

• ETRI Journal
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• 제32권2호
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• pp.265-272
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• 2010

To supply a power distribution network with stable power in a high-speed mixed mode system, simultaneous switching noise caused at the multilayer PCB and package structures needs to be sufficiently suppressed. The uni-planar compact electromagnetic bandgap (UC-EBG) structure is well known as a promising solution to suppress the power noise and isolate noise-sensitive analog/RF circuits from a noisy digital circuit. However, a typical UC-EBG structure has several severe problems, such as a limitation in the stop band's lower cutoff frequency and signal quality degradation. To make up for the defects of a conventional EBG structure, a partially located EBG structure with decoupling capacitors is proposed in this paper as a means of both suppressing the power noise propagation and minimizing the effects of the perforated reference plane on the signal quality. The proposed structure is validated and investigated through simulation and measurement in both frequency and time domains.