• Proceedings of the IEEK Conference
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• 2007.07a
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• pp.437-438
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• 2007

In this paper a embedded decoupling capacitor design with gap structure will be discussed. A novel structure is modeling and analization by High Frequency Structure Simulator (HFSS). Proposed capacitor have $2m{\times}2m$ in rectangular shape. The film thickness of copper/dielectric film/substrate is respectively 35um/20um/35um. A dielectric layer of BaTiO3/epoxy has the relative permittivity of 25. Compare of the planar decoupling capacitor, capacitance densities of this structure in the range of $55{\mu}F$/mm2 have been obtained with 50um gap while capacitance densities of planar structure $55{\mu}F$/mm2 in the same size. The frequency dependent behavior of capacitors is numerically extracted over a wide frequency bandwidth 500MHz-7GHz. The decoupling capacitor can work at high frequency band increasing the gap size.

• JSTS:Journal of Semiconductor Technology and Science
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• v.17 no.3
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• pp.387-400
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• 2017

A new junction-splitting based SAR ADC with a redundant searching capacitor array structure in $0.13{\mu}m$ CMOS process to alleviate capacitor mismatch effects, is presented. The normalized average power has a factor of 0.35 to the conventional SAR ADC at 10-bit conversion accuracy. Statistical experiments show the number of missing codes resulting from the mismatch reduces by 95% for 3% unit-capacitor mismatch ratio, while keeping the conversion energy to that of the conventional JS capacitor array.

• Journal of Sensor Science and Technology
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• v.24 no.2
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• pp.131-136
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• 2015

This paper presents a wide dynamic range complementary metal oxide semiconductor (CMOS) image sensor with column capacitor and feedback structure. The designed circuit has been fabricated by using $0.18{\mu}m$ 1-poly 6-metal standard CMOS technology. This sensor has dual mode operation using combination of active pixel sensor (APS) and passive pixel sensor (PPS) structure. The proposed pixel operates in the APS mode for high-sensitivity in normal light intensity, while it operates in the PPS mode for low-sensitivity in high light intensity. The proposed PPS structure is consisted of a conventional PPS with column capacitor and feedback structure. The capacitance of column capacitor is changed by controlling the reference voltage using feedback structure. By using the proposed structure, it is possible to store more electric charge, which results in a wider dynamic range. The simulation and measurement results demonstrate wide dynamic range feature of the proposed PPS.

• Journal of Advanced Navigation Technology
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• v.25 no.1
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• pp.90-95
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• 2021

In this paper, the design method for a high-sensitivity compact resonator for chipless RFID tags is proposed. Proposed high-sensitivity compact resonator uses an interdigital-capacitor structure instead of a capacitor-shaped strip structure in a conventional ELC resonator. The length of the electrode plate of the IDC structure is longer than that of the conventional capacitor-shaped structure, resulting in a larger equivalent capacitance of the resonator. This can lower the resonant peak frequency of the RCS characteristic. Two resonators with the same length of the square loop and the width of the strip are fabricated on an RF-301 substrate with a thickness of 0.8 mm. The experiment results show that the resonant peak frequency and value of the bistatic RCS for the ELC resonator were 4.305 GHz and -30.39 dBsm, whereas those of the proposed IDC resonator were 3.295 GHz and -36.91 dBsm. Therefore, the size of the resonator is reduced by 23.5% based on the measured resonant peak frequency of the RCS characteristic.

• Journal of the Institute of Electronics Engineers of Korea TE
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• v.42 no.4
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• pp.1-6
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• 2005

Recently embedded passive technology which fabricate passive elements such as resistors and capacitors at the inner layer of PCB(Printed Circuit Board) is used to make high performance IT products. However, embedded capacitor has limit in full range circuit applications because of the low capacitance density. In this paper, a new embedded capacitor which has wrinkled electrodes and dielectric layer was proposed to overcome the limits. FEM(Finite Elements Method) technique was used to evaluate capacitance density of the wrinkled type embedded capacitor. Capacitance density of the wrinkled type embedded capacitor is larger than that of conventional planar type embedded capacitor by about 25.6%$\sim$39.6%. In case of thin film type embedded capacitor, proposed wrinkled structure has more enhanced effect on the capacitance density.

• The Transactions of the Korean Institute of Electrical Engineers C
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• v.51 no.5
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• pp.185-190
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• 2002

Capacitor material utilized in the downsizing passive devices and dynamic random access memory(DRAM) requires the physical and electrical properties at given area such as capacitor thickness reduction, relative dielectric constant increase, low leakage current and thermal stability. Common capacitor materials, $SiO_2$, $Si_3N_4$, $SiO_2$/$Si_3N_4$,TaN and et al., used until recently have reached their physical limits in their application to several hundred angstrom scale capacitor. $Ta_2O_{5}$ is known to be a good alternative to the existing materials for the capacitor application because of its high dielectric constant (25 ~35), low leakage current and high breakdown strength. Despite the numerous investigations of $Ta_2O_{5}$ material, there have little been established the clear understanding of the annealing effect on capacitance characteristic and conduction mechanism, design and fabrication for $Ta_2O_{5}$ film capacitor. This study presents the structure-property relationship of reactive-sputtered $Ta_2O_{5}$ MIM capacitor structure processed by annealing in a vacuum. X-ray diffraction patterns skewed the existence of amorphous phase in as-deposited condition and the formation of preferentially oriented-$Ta_2O_{5}$ in 670, $700^{\circ}C$ annealing. On 670, $700^{\circ}C$ annealing under the vacuum, the leakage current decrease and the enhanced temperature-capacitance characteristic stability. and the leakage current behavior is stable irrespective of applied electric field. The results states that keeping $Ta_2O_{5}$ annealed at vacuum gives rise to improvement of electrical characteristics in the capacitor by reducing oxygen-vacancy and the broken bond between Ta and O.

• Journal of Power Electronics
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• v.18 no.4
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• pp.1051-1066
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• 2018

This study presents a novel step-up switched capacitor multilevel inverter (SCMLI) structure. The proposed structure comprises 2 unequal DC voltage sources, 4 capacitors, and 14 unidirectional power switches. It can synthesize 21 output voltage levels. The important features of the proposed topology are its self-voltage boosting and inherent capacitor voltage balancing capabilities. Furthermore, a cascaded structure of the proposed SCMLI with an asymmetric DC voltage source configuration is presented. The proposed topology and its cascaded structure are compared with conventional and other recently developed topologies in terms of different aspects, such as the required components to produce a specific number of output voltage levels, the total standing voltage (TSV) and peak inverse voltage of the structure, and the maximum number of switches in the conducting path. Furthermore, a cost function is developed to verify the cost-effectiveness of the proposed topology with respect to other topologies. The TSV of the proposed topology is significantly lower than those of other topologies. Moreover, the developed topology is cost-effective compared with other topologies. A detailed operating principle, power loss analysis, and selection procedure for switched capacitors are presented for the proposed SCMLI structure. Extensive simulation and experimental studies of a 21-level inverter structure prove the effectiveness and merits of the proposed SCMLI.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2010.06a
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• pp.358-358
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• 2010

To improve the programming/erasing speed and leakage current of multiple dielectric stack tunnel barrier engineering (TBE) Non-volatile memory, We propose a new concept called staggered structure of TBE memory. In this study, We fabricated staggered structure capacitor on $Si_3N_4$ stacked HfAlO and measured C-V curve that can observe tunneling characteristic of this device as various annealing temperature compared with that of single layer $SiO_2$ capacitor.

• Journal of the Semiconductor & Display Technology
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• v.20 no.4
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• pp.167-170
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• 2021

Integrated passive device (IPD) technology has emerged with the need for 5G. In order to integrate and miniaturize capacitors inside IPD, various studies are actively performed using high-k materials and trench structures. In this paper, an EM(Electromagnetic) simulation study was performed by applying an oxide dielectric to the capacitors having a various trench type structures. Commercially available materials HfO₂, Al₂O₃, and Ta₂O₅ are applied to non, circle, trefoil, and quatrefoil type trench structures to confirm changes in each material or structure. As a result, the bigger the capacitor area and the higher dielectric constant of the oxide dielectric, the insertion loss tended to decrease.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.21 no.10
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• pp.1103-1108
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• 2010

This paper proposes a new type of PIFA with a capacitor structure inserted into the feeding loop. It operates in GSM900, DCS, PCS, and W-CDMA frequency bands. By inserting the capacitor, it shows the effect of lowering the return loss from -2.73 dB to -6.26 dB at the parallel frequency, 2.01 GHz. The improvement of the poor radiation property near the parallel resonance frequency leads to a broadband operation in the upper band, DCS, PCS, and W-CDMA.