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http://dx.doi.org/10.5369/JSST.2015.24.2.131

Dynamic Range Extension of CMOS Image Sensor with Column Capacitor and Feedback Structure  

Lee, Sanggwon (School of Electrical Engineering, Kyungpook National Unversity)
Jo, Sung-Hyun (School of Electrical Engineering, Kyungpook National Unversity)
Bae, Myunghan (School of Electrical Engineering, Kyungpook National Unversity)
Choi, Byoung-Soo (School of Electrical Engineering, Kyungpook National Unversity)
Kim, Heedong (School of Electrical Engineering, Kyungpook National Unversity)
Shin, Eunsu (Department of Sensor and Display Engineering, Kyungpook National Unversity)
Shin, Jang-Kyoo (School of Electrical Engineering, Kyungpook National Unversity)
Publication Information
Journal of Sensor Science and Technology / v.24, no.2, 2015 , pp. 131-136 More about this Journal
Abstract
This paper presents a wide dynamic range complementary metal oxide semiconductor (CMOS) image sensor with column capacitor and feedback structure. The designed circuit has been fabricated by using $0.18{\mu}m$ 1-poly 6-metal standard CMOS technology. This sensor has dual mode operation using combination of active pixel sensor (APS) and passive pixel sensor (PPS) structure. The proposed pixel operates in the APS mode for high-sensitivity in normal light intensity, while it operates in the PPS mode for low-sensitivity in high light intensity. The proposed PPS structure is consisted of a conventional PPS with column capacitor and feedback structure. The capacitance of column capacitor is changed by controlling the reference voltage using feedback structure. By using the proposed structure, it is possible to store more electric charge, which results in a wider dynamic range. The simulation and measurement results demonstrate wide dynamic range feature of the proposed PPS.
Keywords
CMOS image sensor; Column capacitor; Feedback structure; Dual mode;
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