Browse > Article

S-Parameter Simulation for Trench Structure and Oxide High Dielectric of Trench MIM Capacitor  

Park, Jung-Rae (Electronic Packaging Research Center, Kangnam University)
Kim, Gu-Sung (Electronic Packaging Research Center, Kangnam University)
Publication Information
Journal of the Semiconductor & Display Technology / v.20, no.4, 2021 , pp. 167-170 More about this Journal
Abstract
Integrated passive device (IPD) technology has emerged with the need for 5G. In order to integrate and miniaturize capacitors inside IPD, various studies are actively performed using high-k materials and trench structures. In this paper, an EM(Electromagnetic) simulation study was performed by applying an oxide dielectric to the capacitors having a various trench type structures. Commercially available materials HfO2, Al2O3, and Ta2O5 are applied to non, circle, trefoil, and quatrefoil type trench structures to confirm changes in each material or structure. As a result, the bigger the capacitor area and the higher dielectric constant of the oxide dielectric, the insertion loss tended to decrease.
Keywords
IPD; Trench MIM Capacitor; Oxide Dielectric; High-k;
Citations & Related Records
연도 인용수 순위
  • Reference
1 Y. Liao et al., "Miniaturized Lange Bridge Design for 5G Millimeter Waves Communication", 2019 Int. Appl. Comput. Electromagn. Soc. Symp. Miami ACES-Miami 2019, pp. 1-2, 2019.
2 C. bunel et al., "Integrated passive devices and tsv a disruptive technology for miniaturization", Proc. Int. Symp. Microelectron., pp. 794-798, 2013.
3 Ye Lin et al., "Physical Electrical Characterization of 3D Embedded Capacitor: A High-density MIM Capacitor Embedded in TSV", IEEE 67th Proc. - Electron. Compon. Technol. Conf., Orlando, FL, USA, pp. 1956-1961, 2017.
4 A. Farrcy et al., "Plasma-Assisted ALD of TiN/Al2O3 Stacks for MIMIM Trench Capacitor Applications", ECS Trans., Vol. 25, No.4, pp. 389-397, 2009.   DOI
5 J. Robertson et al., "High dielectric constant oxides", Eur. Phys, Vol. 28, pp. 265-291, 2004.
6 T. S. Boscke et al., "Tetragonal Phase Stabilization by Doping as an Enabler of Thermally Stable HfO2 based MIM and MIS Capacitors for sub 50nm Deep Trench DRAM", 2006 Tech. Dig. - Int. Electron Devices Meet., San Francisco, CA, USA, pp. 1-4, 2006.
7 R. A. Shaheen et al., "Millimeter-wave Frequency Reconfigurable Low Noise Amplifiers for 5G", IEEE Trans. Circuits Syst. II: Express Br., Vol. 68, No. 2, pp. 642-646, 2020.
8 D. Hoogeland et al., "Plasma-Assisted ALD of TiN/Al2O3 Stacks for MIMIM Trench Capacitor Applications", ECS Trans., Vol. 25, No.4, pp. 389-397, 2009.   DOI
9 Jun Onohara et al., "Development of the Integrated Passive Device using Through-Glass-Via substrate", 2018 Int. Conf. Electron. Packag. iMAPS All Asia Conf. ICEP-IAAC 2018, Mie, Japan, pp. 19-22, 2018.
10 M. Thomas et al., "Integration of a high density Ta2O5 MIM capacitor following 3D damascene architecture compatible with copper interconnects", Microelectron. Eng., Vol. 83, No.11-12, pp. 2163-2168, 2006.   DOI