• Journal of Electrical Engineering and Technology
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• 제3권1호
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• pp.36-42
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• 2008

In a gas insulated substation (GIS), Very Fast Transient Over-voltages (VFTOs) are generated due to switching operations and ground faults. These fast transients are associated with high frequency components of the order of a few hundreds of MHz. These transients may cause internal faults i.e., layer-to-layer faults or minor faults in a capacitively graded bushing, which is one of the important pieces of terminal equipment for GIS. In the present study, the PSPICE model has been developed to calculate the voltage distribution across the layers of 420kV graded bushing for high frequency pulses of rise time 1 to 50ns, which simulate the VFTO. For this simulation, an equivalent electrical network of bushing with different equivalent layers has been considered. The effect of different equivalent layers modeling circuits on the non-uniform voltage factor has been analysed. The influence of copper strip inductance on voltage distribution across layers has also been analysed for various rise times of high frequency transients. Finally, the leakage current of the bushing is calculated for evaluating the bushing condition under these transients.

• Applied Science and Convergence Technology
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• 제23권6호
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• pp.357-365
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• 2014

A non-invasive method for ion energy distribution measurement at a RF biased surface is proposed for monitoring the property of ion bombardments in capacitively coupled plasma sources. To obtain the ion energy distribution, the measured electrode voltage is analyzed based on the circuit model which is developed with the linearized sheath capacitance on the assumption that the RF driven sheath behaves like a simple diode for a bias power whose frequency is much lower than the ion plasma frequency. The method is verified by comparing the ion energy distribution function obtained from the proposed model with the experimental result taken from the ion energy analyzer in a dual cathode capacitively coupled plasma source driven by a 100 MHz source power and a 400 kHz bias power.

• 반도체디스플레이기술학회지
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• 제13권3호
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• pp.39-43
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• 2014

The effect of electrode charging on the ion energy distribution (IED) was investigated in the dual-frequency capacitively coupled plasma source which was powered of 100 MHz RF at the top electrode and 400 kHz bias on the bottom electrode. The charging property was analyzed with the distortion of the measured current and voltage waveforms. The capacitance and the resistance of electrode sheath can change the property of ion and electron charging on the electrode so it is sensitive to the plasma density which is controlled by the main power. The ion energy distribution was estimated by equivalent circuit model, being compared with the measured distribution obtained from the ion energy analyzer. Results show that the low frequency bias power changes effectively the low energy population of ion in the energy distribution.

• 한국정보통신학회:학술대회논문집
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• 한국정보통신학회 2015년도 추계학술대회
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• pp.63-64
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• 2015

본 논문에서는 마이크로스트립 선로에 용량성으로 결합된 마이크로스트립 배열 안테나에 대해 연구하였다. 배열안테나는 접지된 유전체 기판 상의 급전 마이크로스트립 선로 부근에 직사각형 마이크로스트립 패치를 일정 간격으로 배열한 것이다. 스트립의 폭과 길이, 스트립 간격, 스트립과 급전 선로 사이의 간격 등에 따른 안테나의 특성변화를 관찰하였다. 파라미터 값들을 조절하여 중심주파수 12.5 GHz 대역용 고이득 안테나에 적합하도록 설계하였다.

• Journal of Electrical Engineering and Technology
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• 제4권1호
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• pp.28-34
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• 2009

In a Gas Insulated Substation (GIS), Very Fast Transients (VFTs) are generated mainly due to switching operations. These transients may cause internal faults, i.e., layer-to-layer faults in a capacitively graded bushing as it is one of the most important terminal equipment for GIS. The healthiness of the bushing is generally verified by measuring its leakage current. However, the change in current magnitude/pattern is only marginal for different types of fault conditions. Leakage current monitoring (LCM) systems generate large amounts of data and computer aided interpretation of defects may be of great assistance when analyzing this data. In view of the above, ANN techniques have been used in this study for identification of these minor faults. A single layer perceptron network, a two layer feed-forward back propagation network and cascade correlation (CC) network models are used to identify interlayer faults in the bushing. The effectiveness of the CC network over perceptron and back propagation networks in identification of a fault has been analysed as part of the paper.

• 반도체디스플레이기술학회지
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• 제8권3호
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• pp.31-37
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• 2009

This paper presents one and two dimensional simulation results with discontinuous features (shocks) of capacitively coupled rf plasmas. The model consists of the first two and three moments of the Boltzmann equation for the ion and electron fluids respectively, coupled to Poisson's equation for the self-consistent electric field. The local field and drift-diffusion approximations are not employed, and as a result the charged species conservation equations are hyperbolic in nature. Hyperbolic equations may develop discontinuous solutions even if their initial conditions are smooth. Indeed, in this work, secondary electron emission is shown to produce transient electron shock waves. These shocks form at the boundary between the cathodic sheath (CS) and the quasi-neutral (QN) bulk region. In the CS, the electrons emitted from the electrode are accelerated to supersonic velocities due to the large electric field. On the other hand, in the QN the electric field is not significant and electrons have small directed velocities. Therefore, at the transition between these regions, the electron fluid decelerates from a supersonic to a subsonic velocity in the direction of flow and a jump in the electron velocity develops. The presented numerical results are consistent with both experimental observations and kinetic simulations.

• 전력전자학회논문지
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• 제24권3호
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• pp.153-160
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• 2019

This study proposes a current source-type pulse generator to improve output voltage and current waveforms under a capacitively coupled plasma (CCP) system. The proposed circuit comprises two parallel-connected current source-type converters. These converters can satisfy the required output waveforms of plasma processing. The parallel-connected converters operate without reverse current fault by applying a time-delay control technique. Conventional voltage source converters based on pulse power supply exhibit drawbacks in short-circuit current, and problems occur when they are applied to a CCP system. The proposed pulse power supply based on a current source converter fundamentally solves the short-circuit current problem. Therefore, this topology can improve the voltage and current accuracy of a CCP system.

• 한국진공학회:학술대회논문집
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• 한국진공학회 1994년도 제6회 학술발표회 논문개요집
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• pp.80-81
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• 1994

• 한국표면공학회:학술대회논문집
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• 한국표면공학회 2013년도 춘계학술대회 논문집
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• pp.170-170
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• 2013

We present a novel etching technique for 2-dimentional (2-D) hexagonal boron nitride (h-BN) by using capacitively coupled plasma (CCP) of oxygen combined with a post-treatment by de-ionized (DI) water. Oxygen CCP etching process for h-BN has been systematically studied. It is found that a passivation layer was generated to obstruct further etching while it can be easily and radically removed by DI water. An essential cleaning effect also has been observed in the etching process, organic residues are successfully removed and the surface roughness has much decreased. Considering h-BN is the most important 2-D dielectric material and its potential application for graphene to silicon-based electronic devices, such an etching method can be widely used to control the 2-D h-BN thickness and improve the surface quality.

• 동굴
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• 제82호
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• pp.1-4
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• 2007

In this paper, the etching of Au films using photoresist masks on Si substrates was investigated using a capacitively coupled plasma etch reactor. The advantages of plasma etch techniques over current methods for Au metalization include the ability to simplify the metalization process flow with respect to resist lift-off schemes, and the ability to cleanly remove etched material without sidewall redeposition, as is seen in ion milling. The etch properties were measured for different gas mixing ratios of CF4/Ar, and chamber pressures while the other conditions were fixed. According to statistical design of experiment (DOE), etching process of Au films was characterized and also 20 samples were fabricated followed by measuring etch rate, selectivity and etch profile. There is a chemical reaction between CF4 and Au. Au- F is hard to remove from the surface because of its high melting point. The etching products can be sputtered by Ar ion bombardment.