• Title/Summary/Keyword: Capacitance-voltage

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LiPB Battery SOC Estimation Using Extended Kalman Filter Improved with Variation of Single Dominant Parameter

  • Windarko, Novie Ayub;Choi, Jae-Ho
    • Journal of Power Electronics
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    • v.12 no.1
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    • pp.40-48
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    • 2012
  • This paper proposes the State-of-charge (SOC) estimator of a LiPB Battery using the Extended Kalman Filter (EKF). EKF can work properly only with an accurate model. Therefore, the high accuracy electrical battery model for EKF state is discussed in this paper, which is focused on high-capacity LiPB batteries. The battery model is extracted from a single cell of LiPB 40Ah, 3.7V. The dynamic behavior of single cell battery is modeled using a bulk capacitance, two series RC networks, and a series resistance. The bulk capacitance voltage represents the Open Circuit Voltage (OCV) of battery and other components represent the transient response of battery voltage. The experimental results show the strong relationship between OCV and SOC without any dependency on the current rates. Therefore, EKF is proposed to work by estimating OCV, and then is converted it to SOC. EKF is tested with the experimental data. To increase the estimation accuracy, EKF is improved with a single dominant varying parameter of bulk capacitance which follows the SOC value. Full region of SOC test is done to verify the effectiveness of EKF algorithm. The test results show the error of estimation can be reduced up to max 5%SOC.

Design of a Fingerprint Authentication Sensor with 128${\times}$144 pixel array (128${\times}$144 pixel array 지문인식센서 설계)

  • 정승민;김정태;이문기
    • Journal of the Korea Institute of Information and Communication Engineering
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    • v.7 no.6
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    • pp.1297-1303
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    • 2003
  • This paper propose an advanced circuit for fingerprint sensor signal processing. We increased the voltage between ridge and valley by modifying the parasitic capacitance eliminating circuit of sensor plate. The analog comparator was designed for comparing the sensor signal voltage with the reference signal voltage. We also propose an effective isolation strategy for removing noise and signal coupling, ESD of each sensor pixel. The 128${\times}$l44 pixel fingerprint sensor circuit was designed and simulated, and the layout was performed.

Capacitance-Voltage Characteristics in the Double Layers of SiO$_2$/Si$_3$N$_4$ (SiO$_2$/Si$_3$N$_4$ 이중 박막의 C-V 특성)

  • Hong, Nung-Pyo;Hong, Jin-Woong
    • The Transactions of the Korean Institute of Electrical Engineers C
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    • v.52 no.10
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    • pp.464-468
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    • 2003
  • The double layers of $SiO_2$/$Si_3$$N_4$ have superior charge storage stability than a single layer of $SiO_2$. Many researchers are very interested in the charge storage mechanism of $SiO_2$/$Si_3$$N_4$ [1,2]. In this paper, the electrical characteristics of thermal oxide and atmospheric pressure chemical vapor deposition (APCVD) of $Si_4$$N_4$ have been investigated and explained using high frequency capacitance-voltage measurements. Additionally, this paper will describe capacitance-voltage characteristics for double layers of $SiO_2$/$Si_4$$N_4$ by "Athena", a semiconductor device simulation tool created by Silvaco, Inc.vaco, Inc.

Surface and Electrical Properties of Sr Based Thin Film with Annealing Temperature (열처리 온도에 따른 Sr계 박막의 표면 및 전기적인 특성)

  • Choi, Woon-Sik;Jo, Choon-Nam;Kim, Jin-Sa
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.27 no.2
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    • pp.132-135
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    • 2014
  • The Sr based ceramic thin films were deposited on Si substrate by RF magnetron sputtering method. And Sr based thin films were annealed at $500{\sim}700^{\circ}C$ using RTA. The surface roughness showed about 2.4 nm in annealed thin film at $600^{\circ}C$. The capacitance density of Sr based thin films were increased with the increase of annealing temperature. The maximum capacitance density of $0.6{\mu}F/cm^2$ was obtained by annealing temperature at $700^{\circ}C$. The voltage dependence of dielectric loss showed about 0.02 in voltage ranges of -10~+10 V. The leakage current density of annealing temperature of $600^{\circ}C$ was the $4.0{\times}10^{-6}\;A/cm^2$ at applied voltage of -5~+5 V.

Characteristics Analysis of ZVS-HB Type High Frequency Resonant Inverter According to the Variable Capacitance of the DC Voltage Source Separation Capacitor (직류 전원 분할용 커패시터의 용량 변화에 따른 ZVS-HB형 고주파 공진 인버터의 특성해석)

  • Mun, Chang-Su;Kim, Jong-Hae;Kim, Dong-Hui;O, Seung-Hun;Sim, Gwang-Yeol;Min, Byeong-Jae
    • The Transactions of the Korean Institute of Electrical Engineers B
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    • v.49 no.5
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    • pp.352-357
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    • 2000
  • This paper presents about an example of circuit design and characteristics of inverter according to the variable capacitance of the DC voltage source separation capacitor used in ZVS-HB type high frequency resonant inverter. The soft switching technology known as ZVS is used to reduce turn off loss at switching. In the event the capacitance of the DC voltage source separation capacitor is varied, the analysis of inverter circuit has generally described by using normalized parameter and operating characteristics have been evaluated in terms of switching frequency and parameters. According to the calculated characteristics value, a method of the circuit designs and operating characteristic of the inverter is also presented in this paper. In addition, this paper proves the validity of theoretical analysis through the experiment. This proposed inverter shows that it can be practically used in future as power source system for the lighting equipment of discharge lamp, DC-DC converter etc.

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Power output and efficiency of a negative capacitance and inductance shunt for structural vibration control under broadband excitation

  • Qureshi, Ehtesham Mustafa;Shen, Xing;Chang, Lulu
    • International Journal of Aeronautical and Space Sciences
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    • v.16 no.2
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    • pp.223-246
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    • 2015
  • Structural vibration control using a piezoelectric shunt is an established control technique. This technique involves connecting a piezoelectric patch, which is bonded onto or embedded into the vibrating structure, to an electric shunt circuit. Thus, vibration energy is converted into electrical energy and is dissipated through a network of electrical components. Different configurations of shunt have been researched, among which the negative capacitance-inductance shunt has gained prominence recently. It is basically an analog, active circuit consisting of operational amplifiers and passive elements to introduce real and imaginary impedance on the vibrating structure. The present study attempts to model the behavior of a negative capacitance-inductance shunt in terms of power output and efficiency using circuit modeling software. The shunt model is validated experimentally and is used to control the structural vibration of an aluminum beam, connected to a pair of piezoelectric patches, under broadband excitation. The model is also used to determine the optimal parameters of a negative capacitance-inductance shunt to increase the efficiency and predict the voltage output limit of op-amp against the supply voltage.

The operation properties of DBD reactors in air pressure with varying the capacitance of reactors (정전 용량변화에 따른 대기압 DBD 반응기의 동작 특성 연구)

  • 박봉경;김윤환;장봉철;조정현;김곤호
    • Journal of the Korean Vacuum Society
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    • v.10 no.4
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    • pp.440-448
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    • 2001
  • The operation properties of DBD plasma reactors were observed by using 20 kV square pulse at the cylindrical and planar type of reactors in the condition of air pressure. The optimum operation frequency $f_0$ which optimizes the efficiency of operation was found as such $f_0\proptoexp(-C)$ when the current-voltage curve and charge-voltage curve were observed. Using these properties the dissipated power was evaluated. The dissipated power at the optimum frequency of operation was varied as the value of capacitance which is dependent on the structure and the dielectric material of the reactor, and had the maximum value at the specific value of capacitance. With these value of capacitance, DBD reactors which has a high level of efficiency can be formed.

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Preparation of Zr0.7Sn0.3TiO4 Thin Films by Metal Organic Decomposition and Their Dielectric Properties (금속유기분해법을 사용한 Zr0.7Sn0.3TiO4 박막 제조 및 유전특성)

  • Sun, Ho-Jung
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.23 no.4
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    • pp.311-316
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    • 2010
  • $Zr_{0.7}Sn_{0.3}TiO_4$ (ZST) thin films were fabricated by metal-organic decomposition, and their dielectric properties were investigated in order to evaluate their potential use in passive capacitors for rf and analog/mixed signal integrated circuits. The ZST thin film annealed at the temperature of $800^{\circ}C$ showed a dielectric constant of 27.3 and a dielectric loss of 0.011. The capacitor using the ZST film had quadratic and linear voltage coefficient of capacitance (VCC) of -65 ppm/$V^2$ and -35 ppm/V at 100 kHz, respectively. It also exhibited a good temperature coefficient of capacitance (TCC) value of -32 ppm/$^{\circ}C$ at 100 kHz.

Mechanism and Characteristics of the Surface Flashover on the Laminated Solid Dielectric in N2/O2 Mixture Gas (N2/O2 혼합가스 중 적층된 고체유전체에 대한 연면방전의 메커니즘과 특성)

  • Lim, Dong-Young;Choi, Eun-Hyeok;Choi, Sang-Tae;Bae, Sungwoo;Lee, Kwang-Sik;Choi, Byoung-Ju
    • Journal of the Korean Institute of Illuminating and Electrical Installation Engineers
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    • v.29 no.8
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    • pp.32-39
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    • 2015
  • This paper presents the surface flashover mechanism of a laminated solid dielectric and describes the surface flashover characteristics with the inherent capacitance of the laminated solid dielectric in a $N_2/O_2$ mixture gas (8:2) under an quasi uniform field. It was found that the electron emission at a cathode and the high-local electric field region around an anode were important factors to reasonably describe the surface flashover mechanism. The surface flashover voltage by the mechanism decreased with the inherent capacitance increase of the laminated solid dielectric. In addition to the surface flashover mechanism and its characteristics, the surface flashover voltage equations as a function of the inherent capacitance were derived by considering a gas pressure used in future eco-friendly GIS and the factors influencing the surface flashover.

High Efficiency Ozone Generation Using a Pyramid-Project-Embossed Rod-to-Cylinder Electrode and a Pulse Corona Discharge (도깨비봉형 오존발생장치이 펄스커로나 방전에 의한 오존 발생 특성)

  • 문재덕;이근택
    • The Transactions of the Korean Institute of Electrical Engineers
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    • v.38 no.8
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    • pp.650-657
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    • 1989
  • The conversion efficiency of an ozone generator can be significantly improved by modifying the discharge electrode of a helical strip line rod-to-cylinder type ozone generator to a pyramid-project-embossed rod, and by using a pulse corona discharge. Parametric studies have been carried out to obtain optimum values of peak pulse voltage, pulse forming capacitance, feeder cable and ozone generator capacitance, interelectrode spacing and corona tip density of ozone generator, and feed air flow rate and temperature. The generated ozone concentration was very dependent upon the value of pulse forming capacitance, feeder cable and ozone generator capacitance, and corona tip density. Maximum conversion efficiency was obtained with a pulse forming capacitance of about 500pF, 75pF matched feeder cable and ozone generator, and a corona tip density of 16mm. When operated at optimum values, ozone yield of 79, 99, 80 g/KWh for the different interelectrode type ozone generators tested were obtained, which are approximately 30% higher than that of an industrial ozone generator.

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