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http://dx.doi.org/10.4313/JKEM.2014.27.2.132

Surface and Electrical Properties of Sr Based Thin Film with Annealing Temperature  

Choi, Woon-Sik (Department of Technology Education, Sehan University)
Jo, Choon-Nam (Department of Technology, Daejo Electrical Construction Co.)
Kim, Jin-Sa (Department of Mechatronics, Chosun Colleng of Science & Technology)
Publication Information
Journal of the Korean Institute of Electrical and Electronic Material Engineers / v.27, no.2, 2014 , pp. 132-135 More about this Journal
Abstract
The Sr based ceramic thin films were deposited on Si substrate by RF magnetron sputtering method. And Sr based thin films were annealed at $500{\sim}700^{\circ}C$ using RTA. The surface roughness showed about 2.4 nm in annealed thin film at $600^{\circ}C$. The capacitance density of Sr based thin films were increased with the increase of annealing temperature. The maximum capacitance density of $0.6{\mu}F/cm^2$ was obtained by annealing temperature at $700^{\circ}C$. The voltage dependence of dielectric loss showed about 0.02 in voltage ranges of -10~+10 V. The leakage current density of annealing temperature of $600^{\circ}C$ was the $4.0{\times}10^{-6}\;A/cm^2$ at applied voltage of -5~+5 V.
Keywords
Sputtering; Capacitance density; Dielectric loss; Leakage current density;
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