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http://dx.doi.org/10.4313/JKEM.2010.23.4.311

Preparation of Zr0.7Sn0.3TiO4 Thin Films by Metal Organic Decomposition and Their Dielectric Properties  

Sun, Ho-Jung (군산대학교 신소재공학과)
Publication Information
Journal of the Korean Institute of Electrical and Electronic Material Engineers / v.23, no.4, 2010 , pp. 311-316 More about this Journal
Abstract
$Zr_{0.7}Sn_{0.3}TiO_4$ (ZST) thin films were fabricated by metal-organic decomposition, and their dielectric properties were investigated in order to evaluate their potential use in passive capacitors for rf and analog/mixed signal integrated circuits. The ZST thin film annealed at the temperature of $800^{\circ}C$ showed a dielectric constant of 27.3 and a dielectric loss of 0.011. The capacitor using the ZST film had quadratic and linear voltage coefficient of capacitance (VCC) of -65 ppm/$V^2$ and -35 ppm/V at 100 kHz, respectively. It also exhibited a good temperature coefficient of capacitance (TCC) value of -32 ppm/$^{\circ}C$ at 100 kHz.
Keywords
$Zr_{0.7}Sn_{0.3}TiO_4$; Thin film; Metal-organic decomposition; Dielectric property; Voltage coefficient of capacitance; Temperature coefficient of capacitance;
Citations & Related Records
Times Cited By KSCI : 1  (Citation Analysis)
연도 인용수 순위
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