• Proceedings of the IEEK Conference
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• 1998.06a
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• pp.871-874
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• 1998

A new transmission line parameter extraction method of iC interconnects on silicon substrate is presented. To extract the acurate parameters, the silicon substrate effects were taken into account. Since the electromagnetic fields under the silicon substrate are propagated with slow wave mode, effective dielectric constant and different ground plane with the multi-layer dielectric structures were employed for inductance and capacitance matrix determination. Then accurate signal transients simulation were performed with HSPICE by using the parameters. It was shown that the simulation resutls has an excellent agreement with TDR/TDT measurements.

• Proceedings of the Korean Institute of Communication Sciences Conference
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• 2004.07a
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• pp.309-309
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• 2004

• Journal of Advanced Marine Engineering and Technology
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• v.16 no.5
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• pp.77-84
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• 1992

In the most of acoustic system with low flow rate and low pressure level, one-dimensional, linear modeling techniques are used very well. At low frequency, the tube is modeled as inertia element and cavity as capacitance element, and to extend the range of frequency normal mode oscillators are represented. Bond graph modelling techniques are proposed to predict TL (Transmission Loss) and time response which is impossible by transfer matrix in muffler system. A simple acoustic filter which consists of several tubes and cawities is analyzed in both time and frequency domain.

• Proceedings of the Computational Structural Engineering Institute Conference
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• 2002.10a
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• pp.70-77
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• 2002

Since our physical world cannot be modeled as rigid body, deformable object models are important. For real-time simulation of elastic object, it must be guaranteed by its exact solution and low-latency computational cost. In this paper, we describe the boundary integral equation formulation of linear elastic body and related boundary element method(BEM). The deformation of elastic body can be effectively solved with 1ow run-time computational costs, using precomputed Green Function and fast low-rank updates based on Capacitance Matrix Algorithm.

• Journal of the Korean Institute of Telematics and Electronics
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• v.26 no.12
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• pp.1918-1925
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• 1989

A method for computing the capacitance and inductance matrix for 2-D multiconductor transmission lines with arbitrary cross section in dielectric medium is presented. The integral equation is obtained by using a free space Green function in conjunction with free and bound charges existing on boundary surfaces. The numerical analysis is based on the moment method using point matching and Galerkin method. And kthe scheme to reduce memory and computation time is presented for symmetric structure.

• Proceedings of the KSME Conference
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• 2007.05a
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• pp.441-445
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• 2007

In this paper we demonstrated the applications of OTFTs (organic thin film transistors) to flexible displays such as AM-EPD (active matrix electrophoretic display) and AM-OLED (active matrix organic light emitting diode), and also to integrated circuits. The OTFTs using pentacene semiconductor layer and PVP gate dielectric and Au S/D electrodes exhibited good performance for AM-EPD with the mobility of $0.59\;cm^{2}/V.sec,$ and with also good uniformity over 2.5" diagonal area. However, it is nor enough for AM-OLED requiring the mobility larger than $1\;cm^{2}/V.sec$ for large area displays. The integrated circuits also worked, producing the operating frequency of 1MHz. We need to develop a fabrication process to reduce parasitic capacitance for high frequency operation.

• Journal of the Korea Institute of Military Science and Technology
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• v.3 no.1
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• pp.155-163
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• 2000

A general characterization procedure based on the extraction of a 2n-port admittance matrix corresponding to n uniform coupled lines on the multi-layered substrate using the Finite-Difference Time-Domain (FDTD) technique is presented. The frequency-dependent normal mode parameters are obtained from the 2n-port admittance matrix, which in turn provides the frequency-dependent distributed inductance and capacitance matrices. To illustrate the technique, several practical coupled line structures on multi-layered substrate, including a three-line structure, have been simulated. It is shown that the FDTD based time domain characterization procedure is an excellent broadband simulation tool for the design of multiconductor coupled lines on multilayered PCBs as well as thick or thin hybrid structures.

• Korean Chemical Engineering Research
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• v.50 no.1
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• pp.50-54
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• 2012

In this study, PANI and PANI/$TiO_2$ composites were prepared as electrode materials for a supercapacitor application. Cyclic voltammetry (CV) was performed to investigate the supercapacity properties of these electrodes in an electrolyte solution of 6 M KOH. The PANI/$TiO_2$ composites were polymerized by amount of various ratios through a simple in-situ method. The morphological properties of composites were analyzed by SEM and TEM method. The crystallinity of the composite and $TiO_2$ particle size were identified using X-ray diffraction (XRD). In the electrochemical test, The electrode containing 10 wt% $TiO_2$ content against aniline units showed the highest specific capacitance (626 $Fg^{-1}$) and delivered a capacitance of 286 $Fg^{-1}$ reversibly at a 100 $mVs^{-1}$ rate. According to the surface morphology, the increased capacitance was related to the fact that nano-sized $TiO_2$ particles (~6.5 nm) were uniformly connected for easy charge transfer and an enhanced surface area for capacitance reaction of $TiO_2$ itself.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.43 no.5 s.347
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• pp.25-33
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• 2006

We have extracted the material parameters such as absorption coefficients of GaN, $Al_{0.2}Ga_{0.8}N$, and Schottky contact metal Ni of Schottky Diode UV-A and B detectors using a transfer matrix method (TMM). The ratios of the absorbed light to the total incident amount at the depletion regions of GaN and $Al_{0.2}Ga_{0.8}N$ have been calculated in order to obtain the spectral responsivity. Absorption coefficients of the materials have been obtained by fitting the simulated data with measured data. The depletion layer thickness has been obtanied by capacitance-voltage measurement. The results pave the way for the optimum design of UV Schottky detectors. Since the absorption coefficient of the Ni electrode is very high, its thickness is a major factor that determines the responsivity. It is possible to attain improved UV detectors using thinnest possible Ni electrodes and wide depletion regions of GaN and $Al_{0.2}Ga_{0.8}N$.

• JSTS:Journal of Semiconductor Technology and Science
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• v.1 no.4
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• pp.209-215
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• 2001

In this paper a method for analysis and modelling of coplanar transmission interconnect lines that are placed on top of silicon-silicon oxide substrates is presented. The potential function is expressed by series expansions in terms of solutions of the Laplace equation for each homogeneous region of layered structure. The expansion coefficients of different series are related to each other and to potentials applied to the conductors via boundary conditions. In the plane of conductors, boundary conditions are satisfied at $N_d$ discrete points with $N_d$ being equal to the number of terms in the series expansions. The resulting system of inhomogeneous linear equations is solved by matrix inversion. No iterations are required. A discussion of the calculated line admittance parameters as functions of width of conductors, thickness of the layers, and frequency is given. The interconnect capacitance and conductance per unit length results are given and compared with those obtained using full wave solutions, and good agreement have been obtained in all the cases treated