• 제목/요약/키워드: Cantilever sensor array

검색결과 13건 처리시간 0.023초

Silicon Nitride Cantilever Array Integrated with Si Heaters and Piezoelectric Sensors for Probe-based Data Storage

  • Nam Hyo-Jin;Kim Young-Sik;Lee Caroline Sunyong;Jin Won-Hyeog;Jang Seong-Soo;Cho Il-Joo;Bu Jong-Uk
    • 정보저장시스템학회논문집
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    • 제1권1호
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    • pp.73-77
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    • 2005
  • In this paper, a new silicon nitride cantilever integrated with silicon heater and piezoelectric sensor has been firstly developed to improve the uniformity of the initial bending and the mechanical stability of the cantilever array for thermo-piezoelectric SPM(scanning probe microscopy) -based data storages. This nitride cantilever shows thickness uniformity less than $2\%$. Data bits of 40 nm in diameter were recorded on PMMA film. The sensitivity of the piezoelectric sensor was 0.615 fC/nm after poling the PZT layer. For high speed operation, 128${\times}$128 probe array was developed.

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캔틸레버(Cantilever) 형태의 전극 어레이(array)를 이용한고속 분리 시스템 (High throughput sorting(HTS) system using a cantilever-type electrode array)

  • 이정훈;김영호;김영근;김병규
    • 센서학회지
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    • 제19권2호
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    • pp.112-117
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    • 2010
  • A high-throughput sorting (HTS) system has been designed to separate target particles using a negative dielectrophoretic (n-DEP) force. The system consists of a meso-sized channel and a cantilever-type electrode(CE) array designed to separate a large number of target particles by discerning subtle difference of weight and dielectric material property of the particles. Using the polystyrene beads with various sizes of 10, 25 and $50{\mu}m$, the developed system exhibits high-throughput sorting of about 200 beads/sec and more than 80 % of separation efficiency.

혈압 측정을 위한 외팔보형 접촉힘 센서 어레이 (A Cantilever Type Contact Force Sensor Array for Blood Pressure Measurement)

  • 이병렬;정진우;전국진
    • 센서학회지
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    • 제21권2호
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    • pp.121-126
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    • 2012
  • Piezoresistive type contact force sensor array is fabricated by (111) Silicon bulk micromachining for continuous blood pressure monitoring. Length and width of the unit sensor structure is $200{\mu}m$ and $190{\mu}m$, respectively. The gap between sensing elements is only $10{\mu}m$. To achieve wafer level packaging, the sensor structure is capped by PDMS soft cap using wafer molding and bonding process with $10{\mu}m$ alignment precision. The resistance change over contact force was measured to verify the feasibility of the proposed sensor scheme. The maximum measurement range and resolution is 900 mm Hg and 0.57 mm Hg, respectively.

Thermopiezoelectric Cantilever for Probe-Based Data Storage System

  • Jang, Seong-Soo;Jin, Won-Hyeog;Kim, Young-Sik;Cho, Il-Joo;Lee, Dae-Sung;Nam, Hyo-Jin;Bu, Jong. U.
    • JSTS:Journal of Semiconductor Technology and Science
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    • 제6권4호
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    • pp.293-298
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    • 2006
  • Thermopiezoelectric method, using poly silicon heater and a piezoelectric sensor, was proposed for writing and reading in a probe based data storage system. Resistively heated tip writes data bits while scanning over a polymer media and piezoelectric sensor reads data bits from the self-generated charges induced by the deflection of the cantilever. 34${\times}$34 array of thermopiezoelectric nitride cantilevers were fabricated by a single step wafer level transfer method. We analyzed the noise level of the charge amplifier and measured the noise signal. With the sensor and the charge amplifier 20mn of deflection could be detected at a frequency of 10KHz. Reading signal was obtained from the cantilever array and the sensitivity was calculated.

Piezoelectric PZT Cantilever Array Integrated with Piezoresistor for High Speed Operation and Calibration of Atomic Force Microscopy

  • Nam, Hyo-Jin;Kim, Young-Sik;Cho, Seong-Moon;Lee, Caroline-Sunyong;Bu, Jong-Uk;Hong, Jae-Wan
    • JSTS:Journal of Semiconductor Technology and Science
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    • 제2권4호
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    • pp.246-252
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    • 2002
  • Two kinds of PZT cantilevers integrated with a piezoresistor have been newly designed, fabricated, and characterized for high speed AFM. In first cantilever, a piezoresistor is used to sense atomic force acting on tip, while in second cantilever, a piezoresistor is integrated to calibrate hysteresis and creep phenomena of the PZT cantilever. The fabricated PZT cantilevers provide high tip displacement of $0.55\mu\textrm{m}/V$ and high resonant frequency of 73 KHz. A new cantilever structure has been designed to prevent electrical coupling between sensor and PZT actuator and the proposed cantilever shows 5 times lower coupling voltage than that of the previous cantilever. The fabricated PZT cantilever shows a crisp scanned image at 1mm/sec, while the conventional piezo-tube scanner shows blurred image even at $180\mu\textrm{m}/sec$. The non-linear properties of the PZT actuator are also well calibrated using the piezoresistive sensor for calibration.

Miniature Ultrasonic and Tactile Sensors for Dexterous Robot

  • Okuyama, Masanori;Yamashita, Kaoru;Noda, Minoru;Sohgawa, Masayuki;Kanashima, Takeshi;Noma, Haruo
    • Transactions on Electrical and Electronic Materials
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    • 제13권5호
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    • pp.215-220
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    • 2012
  • Miniature ultrasonic and tactile sensors on Si substrate have been proposed, fabricated and characterized to detect objects for a dexterous robot. The ultrasonic sensor consists of piezoelectric PZT thin film on a Pt/Ti/$SiO_2$ and/or Si diaphragm fabricated using a micromachining technique; the ultrasonic sensor detects the piezoelectric voltage as an ultrasonic wave. The sensitivity has been enhanced by improving the device structure, and the resonant frequency in the array sensor has been equalized. Position detection has been carried out by using a sensor array with high sensitivity and uniform resonant frequency. The tactile sensor consists of four or three warped cantilevers which have NiCr or $Si:B^+$ piezoresistive layer for stress detection. Normal and shear stresses can be estimated by calculation using resistance changes of the piezoresitive layers on the cantilevers. Gripping state has been identified by using the tactile sensor which is installed on finger of a robot hand, and friction of objects has been measured by slipping the sensor.

Silicon Nitride Cantilever Arrays Integrated with Si Heater and Piezoelectric Sensors for SPM Data Storage Applications

  • Nam, Hyo-Jin;Jang, Seong-Soo;Kim, Young-Sik;Lee, Caroline-Sunyong;Jin, Won-Hyeog;Cho, Il-Joo;Bu, Jong-Uk
    • JSTS:Journal of Semiconductor Technology and Science
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    • 제5권1호
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    • pp.24-29
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    • 2005
  • Silicon nitride cantilevers integrated with silicon heaters and piezoelectric sensors were developed for the scanning probe microscope (SPM) based data storage application. These nitride cantilevers are expected to have better mechanical stability and uniformity of initial bending than the previously developed silicon cantilevers. Data bits of 40 nm in diameter were recorded on PMMA film and the sensitivity of the piezoelectric sensor was 0.615 fC/nm, meaning that indentations less than 20 nm in depth can be detected. For high speed operation, $128{\times}128$ cantilever array was developed.

균열 진단을 위한 센서 위치 선정 (Sensor Placement Method for Damage Identification)

  • 김충환;권계시
    • 한국소음진동공학회논문집
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    • 제17권4호
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    • pp.324-332
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    • 2007
  • Sensor placement method for damage identification has been developed for model updating using Taguchi method. In order to select the optimal sensor location, the analysis of variance of objective function using orthogonal array was carried out. Then, modal data at the selected locations were used for damage identification using model updating. The numerical model of a cantilever beam was used in order to compare the damage identification results with conventional sensor location method.

BeCu 금속박판을 이용한 테스트 소켓 제작 (Fabrication of Test Socket from BeCu Metal Sheet)

  • 김봉환
    • 센서학회지
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    • 제21권1호
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    • pp.34-38
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    • 2012
  • We have developed a cost effective test socket for ball grid array(BGA) integrated circuit(IC) packages using BeCu metal sheet as a test probe. The BeCu furnishes the best combination of electrical conductivity and corrosion resistance. The probe of the test socket was designed with a BeCu cantilever. The cantilever was designed with a length of 450 ${\mu}m$, a width of 200 ${\mu}m$, a thickness of 10 ${\mu}m$, and a pitch of 650 ${\mu}m$ for $11{\times}11$ BGA. The fabrication of the test socket used techniques such as through-silicon-via filling, bonding silicon wafer and BeCu metal sheet with dry film resist(DFR). The test socket is applicable for BGA IC chip.