• Journal of the Korean Crystal Growth and Crystal Technology
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• v.11 no.5
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• pp.211-217
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• 2001

Czochralski법에 의한 ZnWO₄단결정을 [100], [101], [001] 방향으로 성공적으로 성장시켰다. 각 축 방향에 따른 성장조건이 rotation speed, pulling rate, 성장된 결정의 직경 등의 변수를 가지고 조사되어졌다. 성장된 결정의 냉각시 발생되는 균열을 annealing 효과에 의하여 방지할 수 있었다. 성장된 결정의 방위는 Laue back reflection으로 결정하였다. 각 축 방향으로 성장된 결정의 미세구조적 특징이 논하여졌으며, 경도, 열팽창계수 및 유전상수의 물리적 특성이 평가되어졌다.

• Korean Chemical Engineering Research
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• v.45 no.6
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• pp.566-572
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• 2007

Two hybrid catalysts for the direct synthesis of DME were prepared and the catalytic activity of these catalysts were investigated. The hybrid catalyst for the direct synthesis of DME was composed as the catalytic active components of methanol synthesis and dehydration. The methanol synthesis catalyst was formed from the precursor contained Cu and Zn, the methanol dehydration catalyst was used ${\gamma}-Al_2O_3$. As PM-CZ+D and CP-CZA/D, Two hybrid catalysts were prepared by physical mixing method (PM-CZ+D) and precipitation method (CP-CZA/D), respectively. PM-CZ+D was prepared by physically mixing methanol synthesis catalyst and methanol dehydration catalyst, CP-CZA/D was prepared by depositing Cu-Zn or Cu-Zn-Al components on ${\gamma}-Al_2O_3$. The crystallinity and the surface morphology of synthesized catalyst were analyzed by X-ray diffraction (XRD) and scanning electron microscope (SEM) to investigate the physical property of prepared catalyst. And BET surface area by $N_2$ adsorption and the surface area of Cu by $N_2O$ chemisorption were investigated about the hybrid catalysts. In addition, catalytic activity of these hybrid catalysts was examined with varying reaction conditions. At that time, the reaction temperature of $250{\sim}290^{\circ}C$, the reaction pressure of 50~70 atm, the $[H_2]/[CO]$ mole ratio of 0.5~2.0 and the space velocity of $1,500{\sim}6,000h^{-1}$ were investigated the catalytic activity. From these results, it was confirmed that the reactivity of CP-CZA/D was higher than that of PM-CZ+D. When the conditions of reaction temperature, pressure, $[H_2]/[CO]$ ratio and space velocity were $260^{\circ}C$, 50 atm and 1.0, $3,000h^{-1}$ respectively, CO conversion using CP-CZA/D hybrid catalyst was 72% and the CO conversion of CP-CZA/D was more than 20% compared with the CO conversion of PM-CZ+D. It was known that Cu surface area of CP-CZA/D hybrid catalyst was higher than that of hybrid PM-CZ+D catalyst using $N_2O$ chemisorption. It was assumed that the catalytic activity was improved because Cu particle of hybrid catalyst prepared by precipitation method was well dispersed.

• Journal of the Korean Institute of Telematics and Electronics
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• v.25 no.7
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• pp.767-773
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• 1988

We have proposed a new simple and easy method for the observation of OSF growth and shrinkage. This method is to observe the behavior of OSF in thedamaged region during oxidation as well as annealing process after introducing mechanical damage on the silicon surface by pressure-controllable indentor. The effect of SiO2 layer on the shrinkage of pregrown OSF generated by the proposed method has been investigated using the samples with or without SiO2 layer. From the experimental data, we suggest a model for the shrinkage of OSF, which is based on the recombinaiton mechanism between silicon interstitial and vacancy at the Si-SiO2 interface.

• Journal of the Semiconductor & Display Technology
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• v.11 no.2
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• pp.39-43
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• 2012

This paper presents a study on the design of a pulling module for silicon ingot and an apparatus of manufacturing silicon single crystal ingot using the same method. The pulling module is conceptually designed by using TRIZ. Czochralski method(CZ) is representative way to manufacture single crystal ingot for wafers. The seed can be broken by high tension which is caused by large weight of a silicon ingot. The solution of this problem has been derived using 6SC(6 steps creativity)TRIZ. The pulling module is actuated by DC motor and rollers. High tension in the seed is removed by the rotate-elevate motion of rollers in the pulling module. A rubber belt is included in the rotate-elevate mechanism for increasing friction between rollers and silicon ingot.

• Journal of the Chungcheong Mathematical Society
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• v.31 no.1
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• pp.29-42
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• 2018

In this paper, we investigate the stability of two functional equations f(ax+by + cz) - abf(x + y) - bcf(y + z) - acf(x + z) + bcf(y) - a(a - b - c)f(x) - b(b - a)f(-y) - c(c - a - b)f(z) = 0, f(ax+by + cz) + abf(x - y) + bcf(y - z) + acf(x - z) - a(a + b + c)f(x) - b(a + b + c)f(y) - c(a + b + c)f(z) = 0 by applying the direct method in the sense of Hyers and Ulam.

• The Journal of the Korean Society for Microbiology
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• v.21 no.1
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• pp.1-16
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• 1986

Fifty-one strains of Pseudomonas aeruginosa were isolated from various clinical specimens. Among them, 26 (51%) strains were gentamicin-resistant (Gm') and 25 (49%) were susceptible to gentamicin (Gm'). The frequencies of resistant strains to piperacillin (Pi), cefotaxime, moxalactam, cefoperazone (Cz), and amikacin (Ak) ranged from 21.6 to 31.4%, and $MIC_{50}$ of these drugs were lower than the critical concentrations of susceptibility and resistance. Thirty (58.8%) strains were multiply resistant to 12 or more drugs. All Gm' strains were multiply resistant to 12 or more drugs and one was resistant to all 18 drugs tested, while only four Gm' strains were multiply resistant to 12 drugs and the multiplicity of resistance of the other Gm' strains were less than 10 drugs. Resistance to Gm appeared to have a significant correlation with the resistance to tobramycin (Tb), Ak, Pi, and Cz. All Gm' strains were resistant to Tb and about 38.4 to 46.1% of them were resistant to Ak, Pi, and Cz. The incorporation of $Ca^{++}$ and $Mg^{++}$ ions in Mueller-Hinton agar (MHA) did not influence the MICs of Gm, Tb, carbenicillin (Cb), Pi, and Cz as compared with the results obtained in MHA without these ions. Gm strains were studied on the combined effect of beta-lactam antibiotics and aminoglycosides by the methods of checkerboard and modified paper strip diffusion. Most Gm' strains showed significant synergistic effects by the FIC index between Ak and three beta-lactam antibiotics; Cb, Pi, and Cz, but these results did not in agreement the results obtained through the method of modified paper strip diffusion test. In order to know the nature of the drug resistance of P. aernginosa, the plasmid profile analysis was studied. Agarose gel electrophoresis of lysates processed by the method of Kado and Liu showed one or more plasmids in 22 (43.1%) strains. A group of 19 strains showed at least one band of plasmid and three strains two bands. The range of the molecular weight of plasmids was 3.8 to 243 Mdal. All strains carrying large plasmids larger than 200 Mdal were isolated from wound specimens. Three Gm' strains also harboured the plasm ids of 13 to 203 Mdal.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.24 no.6
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• pp.246-251
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• 2014

Recent studies have shown methods of improving solar cell efficiency. Especially on single crystalline silicon wafer which is high-efficiency solar cell material that has been widely studied. Interstitial oxygen (Oi) is the main impurity in the Czochralski (Cz) growing method, and excess of this can form precipitates during cell fabrication. We have demonstrated the effect of Oi impurity and oxygen precipitation concentration of the wafer on Cz-silicon solar cell efficiency. The result showed a decrease in cell efficiency as Oi and oxygen precipitation increase. Moreover, we have found that the critical point of [Oi] to bring higher cell efficiency is at 14.5 ppma in non-existent Bulk Micro Defect (BMD).

• Journal of the Korean Institute of Telematics and Electronics D
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• v.35D no.10
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• pp.29-38
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• 1998

In this paper, we have induced a model for the growth and dissolution of oxygen precipitates which is generated during arbitrary thermal treatments or VLSI processes in CZ-grown silicon. Based on diffusion-limited growth law and detailed balance equilibrium theory, growth and dissolution rates are induced and inserted into a set of chemical rate equations and a Fokker-Planck equation. Then this is solved by numerical analysis. And because phenomenon at the silicon surface must be considered differently in various annealing conditions, in particular in $O_2$ ambient we have considered the growth model of SiO$_2$ at the surface of silicon wafer and the enhancement of oxygen solubility. By this method, oxygen depth profile and density distribution of oxygen precipitates are calculated more accurately than the other simulation results.

• Journal of Powder Materials
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• v.29 no.2
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• pp.110-117
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• 2022

The grain growth behavior in the (1-x)K_0.5Na_0.5NbO₃-xCaZrO₃ (KNNCZ-x) system is studied as a function of the amount of CZ and grain shape. The (1-x)K_0.5Na_0.5NbO₃-xCaZrO₃ (KNNCZ-x) powders are synthesized using a conventional solid-state reaction method. A single orthorhombic phase is observed at x = 0 - 0.03. However, rhombohedral and orthorhombic phases are observed at x = 0.05. The grain growth behavior changes from abnormal grain growth to the suppression of grain growth as the amount of CaZrO₃ (CZ) increases. With increasing CZ content, grains become more faceted, and the step-free energy increases. Therefore, the critical growth driving force increases. The grain size distribution broadens with increasing sintering time in KNNCZ-0.05. As a result, some large grains with a driving force larger than the critical driving force for growth exhibit abnormal grain growth behavior during sintering. Therefore, CZ changes the grain growth behavior and microstructure of KNN. Grain growth at the faceted interface of the KNNCZ system occurs via two-dimensional nucleation and growth.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.1 no.1
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• pp.74-81
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• 1991

The temperature profile of Czochralski single crystal growth system was simulated considering the fluid flow and surface radiation heat transfer. View factors of surface elements were calculated for radiation heat transfer. Two phases(solid and liquid) were treated as a continuous phase by assigning artificial large viscosity to the solid phase and latent heat was accounted by iterative heat revolution method. The solidification model was applied to solid front of the pure Ga during the melting to verify the model. The whole simulation model of CZ system was applied to the growth Al single crystal.