• Transactions on Electrical and Electronic Materials
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• v.13 no.5
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• pp.237-240
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• 2012

A conducting polymer, poly 3-hexylthiophene (P3HT) is characterized with the metal-insulator-semiconductor (MIS) measurement method and the high frequency planar circuit method. From the MIS measurement method, the relative dielectric constant of the P3HT film is estimated to be 4.4. For the high frequency planar circuit method, a coplanar waveguide is fabricated on the P3HT film. When applying +20 V to the CPW on P3HT film, the P3HT film is in accumulation mode and becomes lossy. The CPW on P3HT film is 1.5 dB lossier than the CPW on $SiO_2$ film without P3HT film at 50 GHz.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.07b
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• pp.581-584
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• 2002

In this work, a CPW resonator was designed and fabricated to investigate the basic microwave properties, such as effective dielectric constant, of BST thin films. Their properties were used as basic data to simulate and design CPW tunable bandpass filter. We also report on gold/$Ba_{0.5}Sr_{0.5}TiO_3$(BST) ferroelectric thin film C-band tunable bandpass filters(BPFs) designed and fabricated on magnesium oxide substrates using CPW structure. The 2 pole filter was designed for a center frequency of 5.88 GHz with a bandwidth of 9 %. The BST based CPW filter offers a high sensitivity parameter as well as a low loss parameter. The tuning range for the bandpass filter with CPW structure was determined to be 170 MHz.

• ETRI Journal
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• v.26 no.4
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• pp.315-320
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• 2004

This paper proposes a 10-${\mu}m$ thick oxide layer structure that can be used as a substrate for RF circuits. The structure has been fabricated using an anodic reaction and complex oxidation, which is a combined process of low-temperature thermal oxidation (500 $^{\circ}C$ for 1 hr at $H_2O/O_2$) and a rapid thermal oxidation (RTO) process (1050 ${\circ}C$, for 1 min). The electrical characteristics of the oxidized porous silicon layer (OPSL) were almost the same as those of standard thermal silicon dioxide. The leakage current density through the OPSL of 10 ${\mu}m$ was about 10 to 50 $nA/cm^2$ in the range of 0 to 50 V. The average value of the breakdown field was about 3.9 MV/cm. From the X-ray photo-electron spectroscopy (XPS) analysis, surface and internal oxide films of OPSL prepared by a complex process were confirmed to be completely oxidized. The role of the RTO process was also important for the densification of the porous silicon layer (PSL) oxidized at a lower temperature. The measured working frequency of the coplanar waveguide (CPW) type short stub on an OPSL prepared by the complex oxidation process was 27.5 GHz, and the return loss was 4.2 dB, similar to that of the CPW-type short stub on an OPSL prepared at a temperature of 1050 $^{\circ}C$ (1 hr at $H_2O/O_2$). Also, the measured working frequency of the CPW-type open stub on an OPSL prepared by the complex oxidation process was 30.5 GHz, and the return was 15 dB at midband, similar to that of the CPW-type open stub on an OPSL prepared at a temperature of $1050^{\circ}C$ (1 hr at $H_2O/O_2$).

• Journal of the Korean Institute of Telematics and Electronics D
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• v.34D no.6
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• pp.11-19
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• 1997

For the circuit modeling of th ecoplanar waveguide (CPW) discontinuities, th eequivalent inductance is analyzed via the 3-dimensional boundary element method. The proposed method utilizes the magnetic scalar potential to obtain the magnetic flux passing sthrough the air-dielectric interfaces of the coplanar waveguide. The boundary integral is simplified by use fo the symmetry when the substrate is composed of the nonmagnetic material. In the numerical analysis, linear basis function and the collocationscheme are employed. The short-end and the step discontinuities are cahracterized through the calculations of the equivalent inductance andd the capacitance. The present method avoids the usual vector formulation and is quite advantageous in the quasi-staic characterization of the CPW disconditnuities.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.18 no.7
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• pp.809-818
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• 2007

Generally, carriers on which microwave circuits are mounted are used as building blocks of MIC module for the convenience of MIC assembly and the unit module characterization. However the interconnection of the microstrip-based carriers by wire bonding causes the serious problem of mismatch and results in the higher insertion loss as frequency becomes higher. The gap and the depth between carriers are considered as the main reason of the degradation. The CPW can be the solution to cope with such problem considering its field are dominantly concentrated on the top plane. In this paper, we propose and demonstrate the CBFGCPW to microstrip transition with the low insertion loss that can be applied without causing the MIC carrier interconnection problem.

• Journal of the Korean Institute of Telematics and Electronics D
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• v.34D no.6
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• pp.1-10
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• 1997

By using the boundary element method, the cahracterization and the circuit modelling of the coplanar waveguide (CPW) discontinuities are performed bvia quasi-static approximation. The capacitive equivalent circuits are obtained by developing the 3-D boundary element method with collocation method. On the triangular patch, the numerical scheme employed the linear basis functions and the analytic solutions of the integrals on the singular points. The capacitive discontinuities of gaps, end-gaps, and open-ends are characterized and the results compared with the conductor backed coplanar waveguides.

• Journal of the Microelectronics and Packaging Society
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• v.6 no.4
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• pp.61-71
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• 1999

The recent trend toward higher frequencies, miniaturization and lower-cost in wireless communication equipment is demanding high density packaging technologies such flip chip interconnection and multichip module(MCM) as a substitute of conventional plastic package. With analyzing the recently reported research results of the RF flip chip, this paper presents the technical issues and advantages of RF flip chip and suggest the flip chip technologies suitable for the development stage. At first, most of RF flip chips are designed in a coplanar waveguide line instead of microstrip in order to achieve better electrical performance and to avoid the interaction with a substrate. Secondly, eliminating wafer back-side grinding, via formation, and back-side metallization enables the manufacturing cost to be reduced. Finally, the electrical performance of flip chip bonding is much better than that of plastic package and the flip chip interconnection is more suitable for Transmit/Receiver modules at higher frequency. However, the characterization of CPW designed RF flip chip must be thoroughly studied and the Au stud bump bonding shall be suggested at the earlier stage of RF flip chip development.

• Journal of Advanced Navigation Technology
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• v.7 no.2
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• pp.180-190
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• 2003

By using accurate closed-form Green's functions obtained from real-axis integration method, the full-wave analysis of CPW discontinuities are performed in space domain. In solving MPIE(Mixed Potential Integral Equation), Galerkin's scheme is employed with the linear basis functions on the triangular elements in air-dielectric boundary. In the singular integral arising when the observation point and source point coincides, the surface integral is transformed into the line integral and the integral is evaluated by regular integration. By using the Green's function from the real-axis integration method, the discontinuities are characterized accurately.

• Journal of the Korean Wood Science and Technology
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• v.38 no.3
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• pp.213-222
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• 2010

In this study, chemical compositions - holocellulose, lignin and monomeric sugars - were characterized with two poplar wood cell walls, one of which was grown at normal condition (CPW) and the other was genetically modified by antisence suppression of CCoAOMT gene expression (ACPW). Milled wood lignins were isolated from CPW and ACPW and subjected to methoxyl group, DFRC, Py-GC/MS, GPC, $^{13}C$-NMR analysis, respectively. There were few differences in holocellulose contents in both cell walls, which were determined to 81.6% in CPW and to 82.3% in ACPW. However, lignin contents in ACPW was clearly decreased by the suppression of CCoAOMT gene expression. In CPW 21.7% of lignin contents was determined, while lignin contents in ACPW was lowered to 18.3%. The relative poor solubility of ACPW in alkali solution could be attributed to the reduction of lignin content. The glucose contents of CPW and ACPW were measured to 511.0 mg/g and 584.8 mg/g and xylose contents 217.8 mg/g and 187.5 mg/g, respectively, indicating that suppression of CCoAOMT gene expression could be also influenced to the formation of monomeric sugar compositions. In depth investigation for milled wood lignin (MWL) isolated from both samples revealed that the methoxyl contents at ACPW was decreased by 7% in comparison to that of CPW, which were indirectly evidenced by $^{13}C$-NMR spectra and Py-GC/MS. According to the data from Py-GC/MS S/G ratios of lignin in CPW and ACPW were determined to 0.59 and 0.44, respectively. As conclusive remark, the biosynthesis of syringyl unit could be further influenced by antisense suppression of CCoAOMT during phenylpropanoid pathway in the plant cell wall rather than that of guaiacyl unit.

• Journal of electromagnetic engineering and science
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• v.6 no.2
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• pp.135-145
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• 2006

This paper presents the theory, design, fabrication and characterization of the novel low actuation voltage capacitive shunt RF-MEMS switch using a corrugated membrane with HRS MEMS packaging. Analytical analyses and experimental results have been carried out to derive algebraic expressions for the mechanical actuation mechanics of corrugated membrane for a low residual stress. It is shown that the residual stress of both types of corrugated and flat membranes can be modeled with the help of a mechanics theory. The residual stress in corrugated membranes is calculated using a geometrical model and is confirmed by finite element method(FEM) analysis and experimental results. The corrugated electrostatic actuated bridge is suspended over a concave structure of CPW, with sputtered nickel(Ni) as the structural material for the bridge and gold for CPW line, fabricated on high-resistivity silicon(HRS) substrate. The corrugated switch on concave structure requires lower actuation voltage than the flat switch on planar structure in various thickness bridges. The residual stress is very low by corrugating both ends of the bridge on concave structure. The residual stress of the bridge material and structure is critical to lower the actuation voltage. The Self-alignment HRS MEMS package of the RF-MEMS switch with a $15{\Omega}{\cdot}cm$ lightly-doped Si chip carrier also shows no parasitic leakage resonances and is verified as an effective packaging solution for the low cost and high performance coplanar MMICs.