• Journal of the Korean Society for Precision Engineering
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• v.23 no.5 s.182
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• pp.59-67
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• 2006

Chemical Mechanical Polishing(CMP) in semiconductor production is characterized its output property by Removal Rate(RR) and Non-Uniformity(NU). Some previous works show that RR is determined by production of pressure and velocity and NU is also largely affected by velocity of flowfield during CMP. This study is about the direct measurement of velocity of slurry during CMP and whole flowfield upon the non-groove pad by Particle Image Velocimetry(PIV). Typical PIV system is modified adequately for inspecting CMP and slurry flowfield is measured by changing both pad rpm and carrier rpm. We performed measurement with giving some variation in the kinds of pad. The results show that the flowfield is majorly determined not by Carrier but by Pad in the case of non-groove pad.

• Tribology and Lubricants
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• v.38 no.4
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• pp.152-161
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• 2022

Chemical mechanical planarization (CMP) is a technology that planarizes the surfaces of semiconductor devices using chemical reaction and mechanical material removal, and it is an essential process in manufacturing highly integrated semiconductors. In the CMP process, a conditioning process using a diamond conditioner is applied to remove by-products generated during processing and ensure the surface roughness of the CMP pad. In previous studies, prediction of pad wear by CMP conditioning has depended on numerical analysis studies based on mathematical simulation. In this study, using an artificial neural network, the ratio of conditioner coverage to the distance between centers in the conditioning system is input, and the average conditioning density, standard deviation, nonuniformity (NU), and conditioning density distribution are trained as targets. The result of training seems to predict the target data well, although the average conditioning density, standard deviation, and NU in the contact area of wafer and pad and all areas of the pad have some errors. In addition, in the case of NU, the prediction calculated from the training results of the average conditioning density and standard deviation can reduce the error of training compared with the results predicted through training. The results of training on the conditioning density profile generally follow the target data well, confirming that the shape of the conditioning density profile can be predicted.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2004.11a
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• pp.715-718
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• 2004

In this paper, we studied the characteristics of new polishing pad, which can apply W-CMP process for global planarization of multi-level interconnection structure. The hardness and density were measured as a function of groove pattern. Also, we compared the pore size through the SEM photograph. Finally, we investigated the CMP characteristics with five different kind of groove pattern sample. Through the above results, we can select optimum groove pattern, so we can expect to begin home product of polishing pad.

• 한국가시화정보학회:학술대회논문집
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• 2004.11a
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• pp.48-51
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• 2004

Chemical Mechanical Polishing(CMP) is popularly used in production of semiconductor because of large area polishing ability probability of improvement for more integrated circuit. However, present CMP processing causes some non-uniformity errors which can be critical for highly integrated circuit. Previous studies predict that flow-field of slurry during CMP can create non-uniformity, but no quantitative measurement has conducted. In this study, using PIV, slurry velocity flow-field during CMP is measured by changing the ratio of RPM of pad and carrier with tuned PIV system adequate for small room in CMP machine and Cabot's non-groove pad Epad-A100. The result show that velocity of slurry is majorly determined by pad-rpm and the ratio of between carrier and pad rpm make some changes in streamlines.

• Proceedings of the Korean Society of Precision Engineering Conference
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• 2003.06a
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• pp.86-89
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• 2003

Chemical Mechanical Planarization(CMP) has been accepted as the most effective processes for ultra large scale integrated (ULSI) chip manufacturing. However, as the polishing process continues, pad pores get to be glazed by polishing residues, which hinder the supply of new slurry. And pad surface is ununiformly deformed as real contact distance. These defects make material removal rate(MRR) decrease with a number of polishied wafer. Also the desired within-chip planarity, within wafer non-uniformity(WIWNU) and wafer to wafer non-uniformity(WTWNU) arc unable to be achieved. So, pad conditioning in CMP Process is essential to overcome these defects. The eletroplated or brazed diamond conditioner is used as the conventional conditioning. And. allumina long fiber, the jet power of high pressure deionized water, vacuum compression. ultrasonic conditioner aided by cavitation effect and ceramic plate conditioner are once used or under investigation. But. these methods arc not sufficient for ununiformly deformed pad surface and the limits of conditioning effect. So this paper focuses on the characteristics of diamond conditioner which reopens glazed pores and removes ununiformly deformed pad away.

• Journal of the Korean Society for Precision Engineering
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• v.18 no.11
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• pp.168-173
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• 2001

The chemical mechanical polishing (CMP) is generally consisted of pad, slurry including abrasives and so on. However, there are some problems in a general CMP: defects, a high Cost of Consumable (CoC), an environmental problem. The slurry including abrasives especially gives rise to not only increase a CoC, but also prohibition from achieving an eco-process. This paper introduces an abrasive capsulation pad to achieve an eco-process decreasing abrasives used is CMP. The binder wth a water a water swelling and a water soluble characteristic is used for an auto-conditioning, and the $CeO_2$abrasive is selected for an abrasive capsulation pad. Comparing with a conventional CMP, an abrasive capsulation pad appears good characteristics in ILD CMP and is able to achieve an eco-process decreasing wasted slurry.

• Journal of the Microelectronics and Packaging Society
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• v.13 no.3 s.40
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• pp.47-51
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• 2006

Recently, CMP (Chemical Mechanical Polishing) is one of very important processing in semiconductor technology because of large integration and application of design role. CMP is a planarization process of wafer surface using the chemical and mechanical reactions. One of the most important components of the CMP system is the polishing pad. During the CMP process, the pad itself becomes smoother and glazing. Therefore it is necessary to have a pad conditioning process to refresh the pad surface, to remove slurry debris and to supply the fresh slurry on the surface. A conditioning disk is used during the pad conditioning. There are diamonds on the surface of diamond disk to remove slurry debris and to polish pad surface slightly, so density, shape and size of diamond are very important factors. In this study, we characterized diamond disk with 9 kinds of sample.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.07a
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• pp.54-57
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• 2001

We studied the characteristics of polishing pad, which can apply STI-CMP process for global planarization of multilevel interconnection structure. Also, we investigated the effects of different sets of polishing pad, such as soft and hard pad. As an experimental result, hard pad showed center-fast type, and soft pad showed edge-fast type. Totally, the defect level has shown little difference, however, the counts of scratch was defected less than 2 on JRlll pad. Through the above results, we can select optimum polishing pad, so we can expect the improvements of throughput and devise yield.

• Proceedings of the KSME Conference
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• 2003.04a
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• pp.1283-1288
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• 2003

The friction heat generated by the CMP process hasinfluence on removal rate and WIWNU(Within Wafer Non-Uniformity). Therefore, the object of this study is to find the distribution of temperature on pad surface during CMP process. To do this, the authors analyse the kinematics of CMP equipment to verify the sources of friction heat and compare the analysis result with the experimental results. Through the analysis and experiment conducted in this paper, we can predict the distribution of polishing temperature across the pad surface. Furthermore the result could help to predict the process conditions which could enhance the polishing results, such as WIWNU and removal rate of thin film to achieve more efficient process.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2004.07b
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• pp.1308-1311
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• 2004

It is very important that get polishing characteristic that to be stable that accomplish planarization of high efficiency in chemical mechanical polishing, and there is repeatability Groove of pad causes much effects in flow of slurry among various factors that influence in polishing characteristic, is expected to cause change of lubrication state and polishing characteristic in contact between wafer and pad. Therefore, divided factors of pad groove by groove pattern, groove profile, groove dimensions. This research wishes to study effect that dimension of pad groove gets in polishing performance. When changed dimension (width, depth, pitch of groove) of groove, measured change of removal rate and friction force. According as groove dimension changes, could confirm that removal rate and friction force change. While result of this experiment studies effect of pad groove in CMP, it is expected to become small help.