Journal of the Korean Society for Precision Engineering (한국정밀공학회지)

Korean Society for Precision Engineering (한국정밀공학회)
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Study on the Abrasive Capsulation Pad in Interlayer Dielectric Chemical Mechanical Polishing

층간절연막 화학기계연마에서 입자코팅패드에 관한 연구

  • 김호윤 (부산대학교 정밀기계공학과) ;
  • 박재홍 (부산대학교 정밀기계공학과) ;
  • 정해도 (부산대학교 정밀기계공학과) ;
  • 서현덕 (지앤피테크놀로지) ;
  • 남철우 (하이닉스 반도체 메모리 연구소) ;
  • 이상익 (하이닉스 반도체 메모리 연구소)
  • Published : 2001.11.01
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Abstract

The chemical mechanical polishing (CMP) is generally consisted of pad, slurry including abrasives and so on. However, there are some problems in a general CMP: defects, a high Cost of Consumable (CoC), an environmental problem. The slurry including abrasives especially gives rise to not only increase a CoC, but also prohibition from achieving an eco-process. This paper introduces an abrasive capsulation pad to achieve an eco-process decreasing abrasives used is CMP. The binder wth a water a water swelling and a water soluble characteristic is used for an auto-conditioning, and the $CeO_2$abrasive is selected for an abrasive capsulation pad. Comparing with a conventional CMP, an abrasive capsulation pad appears good characteristics in ILD CMP and is able to achieve an eco-process decreasing wasted slurry.

Keywords

References

  1. H. Lin, S.S. KIm, K.S. Chung, 'Influence of Polysilicon Deposition Conditions on the Characteristics of Oxide-Nitride-Oxide Memory Capacitors,' J. Korean Phys., Vol. 33, 501, 1998
  2. 정해도, '화학기계적 폴리싱(CMP)에 의한 층간절연막의 광역평탄화에 관한 연구,' 한국정밀공학회지, 제 13 권, 제 11 호, pp. 45-46, 1996
  3. Thomas F.A. Bibby, John A. Adams, Karey Holland, Gerald A. Krulik, Paul Parikh, 'CMP CoO reduction: slurry reprocessing,' Thin Solid Films,, 308-309, pp. 538-542, 1997 https://doi.org/10.1016/S0040-6090(97)00496-3
  4. Vilas Koinkar, Reza Golzarian, Qiuliang Luo, Matthew VanHanehem, Jim Shen, Peter, Burke,' Chemical Mechanical Planarization of copper interconnects using fixed abrasive polishing pad,' Proceedings of fifth international CMP-MIC, Santa Clara, U.S.A., March 2-3, pp. 58-65, 2000
  5. Andreas Romer, Timothy Donohue, John Gagliardi, Frauke Weimar, Peter Thime, Mark Hollatz, 'STI CMP using fixed abrasive demands, measurement methods and results,' Proceedings of fifth international CMP-MIC, Santa Clara, U.S.A., March 2-3, pp. 265-274, 2000
  6. Joseph M. Steigerwald, Chemical Mechanical Planarization of Microelectronic Materials, John Wiley, 1997
  7. Thomas F.A. Bibby, Randy Harwood, Dennis Schey, Kevin Mckinley, 'Cartesian coordinate maps for chemical mechanical planarization uniformity characterization,' Thin Solid Films, 308-309, pp. 512-517, 1997 https://doi.org/10.1016/S0040-6090(97)00435-5
  8. M. fayolle,, J.F. Lugand, F. Weimar, W. Bruxvoort, 'Evaluation of a new slurry-free CMP technique for oxide planarization,' Proceedings of third international CMP-MIC, Santa Clara, U.S.A., February 19-20, pp. 128-133, 1998