• 전자공학회지
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• 제13권1호
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• pp.86-95
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• 1986

The basic physical principles involved in the operation of monolithic magnetic sensors are reviewed and technological aspects outlined. More or less conventional devices based on Hall effect, magnetoresistance or current path deflection are described. It is shown that such sensors with 2, 3, 4 or 5 terminal contacts are achievable with standard silicon integrated circuit process. Several kinds of magnetodiodes (p+nn+,p+n, Schottky, MOS, memory, CMOS) have been fabricated on Si and on SOS films and present attractive properties. Finally, the magneto-transistor family is discussed with emphasis to split-terminals, CMOS, unijunction and fila-mentary devices.

• 한국음향학회지
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• 제16권3호
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• pp.106-113
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• 1997

본 논문에서는 저전압 아날로그-디지털 혼성모드 신호처리를 위한 3V CMOS 연속시간 완전균형 적분기가 설계되었다. 설계된 완전균형 적분기의 기본구조는 NMOS와 PMOS 트랜지스터를 이용한 상보형 회로이며, 이러한 상보형 회로는 적분기의 트랜스컨덕턴스를 증가시킬수 있는 장점이 있다. 그리고 트랜스컨덕턴스의 증가는 적분기의 단위이득 주파수, 폴 그리고 영점을 증가시킨다. 소신호해석과 SPICE 시뮬레이션을 통해 기존의 적분기들과 비교하여 이러한 개선점들을 증명하였다. 0.8 3V CMOS CMOS 공정 파라미터를 이용하여 완전균형 상보형 적분기의 응용회로로서 3차 능동 지역통과 필터를 설계하였다.

• 센서학회지
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• 제27권6호
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• pp.362-367
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• 2018

A complementary metal oxide semiconductor (CMOS) binary image sensor is proposed for low-power and low-noise operation. The proposed binary image sensor has the advantages of reduced power consumption and fixed pattern noise (FPN). A gate/body-tied (GBT) p-channel metal-oxide-semiconductor field-effect transistor (PMOSFET)-type photodetector is used as the proposed CMOS binary image sensor. The GBT PMOSFET-type photodetector has a floating gate that amplifies the photocurrent generated by incident light. Therefore, the sensitivity of the GBT PMOSFET-type photodetector is higher than that of other photodetectors. The proposed CMOS binary image sensor consists of a pixel array with $394(H){\times}250(V)$ pixels, scanners, bias circuits, and column parallel readout circuits for binary image processing. The proposed CMOS binary image sensor was analyzed by simulation. Using the dynamic comparator, a power consumption reduction of approximately 99.7% was achieved, and this performance was verified by the simulation by comparing the results with those of a two-stage comparator. Also, it was confirmed using simulation that the FPN of the proposed CMOS binary image sensor was successfully reduced by use of the double sampling process.

• 센서학회지
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• 제30권1호
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• pp.61-65
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• 2021

In this study, we propose a 2500 frame per second (fps) high-speed binary complementary metal oxide semiconductor (CMOS) image sensor using a gate/body-tied (GBT) p-channel metal oxide semiconductor field effect transistor-type high-speed photodetector. The GBT photodetector generates a photocurrent that is several hundred times larger than that of a conventional N+/P-substrate photodetector. By implementing an additional binary operation for the GBT photodetector with such high-sensitivity characteristics, a high-speed operation of approximately 2500 fps was confirmed through the output image. The circuit for binary operation was designed with a comparator and 1-bit memory. Therefore, the proposed binary CMOS image sensor does not require an additional analog-to-digital converter (ADC). The proposed 2500 fps high-speed operation binary CMOS image sensor was fabricated and measured using standard CMOS process.

• The Journal of the Acoustical Society of Korea
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• 제18권3E호
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• pp.44-48
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• 1999

The CMOS four-quadrant analog multiplier for low-voltage low-power applications are presented in this thesis. The circuit approach is based on the characteristic of the LV (Low-Voltage) composite transistor which is one of the useful analog building block. SPICE simulations are carried out to examine the performances of the designed multiplier. Simulation results are obtained by 0.6㎛ CMOS parameters with 2V power supply. The basic configuration of the multiplier is the CMOS Gilbert cell with two LV composite transistors. The linear input range of the multiplier is over ±0.4V with a linearity error of less than 1.3%. The measured -3dB bandwidth is 288MHz and the power dissipation is 255 ㎼.

• 대한전기학회:학술대회논문집
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• 대한전기학회 1987년도 전기.전자공학 학술대회 논문집(II)
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• pp.1507-1511
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• 1987

This paper proposes a NAND-NAND logic sequential Programmable Logic Array (PLA) using CMOS technology, and test generation methods about stuck-open faults. By using LSSD (Level Sensitive Scan Design) method instead of Flip-Flops in Sequential PLA, the complex test problems of sequential logic are simplified. After generating the test sets using connection graph, regular test sequences and all transistor faults detection method in PLA are proposed. Finally, by programming these algorithms in PASCAL at VAX 8700 and adopting these to pratical CMOS Sequential PLA circuits, we proved the effectiveness of this design.

• Transactions on Electrical and Electronic Materials
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• 제4권3호
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• pp.5-9
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• 2003

In this paper, a layout-based CMOS RF model for RFIC's including the capacitance effect, the skin effect, and the proximity effect between metal lines on the Si surface is proposed for the first time for accurately predicting the RF behavior of CMOS devices. With these RF effects, the RF equivalent circuit model based on the layout of the multi-finger gate transistor is presented. The capacitances between metal lines on the Si surface are modeled with the layout. And the skin effect is modeled to the equivalent ladder circuit of metal line. The proximity effect is modeled by adding the mutual inductance between cross-coupled inductances in the ladder circuit representation. Compared to the BSIM 3v3 and other models, the proposed RF model shows better agreements with the measured data and shows well the frequency dependent behavior of devices in GHz ranges.

• 대한전자공학회:학술대회논문집
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• 대한전자공학회 2003년도 하계종합학술대회 논문집 II
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• pp.863-866
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• 2003

Recently, there has been growing interests in the magneto-resistive random access memory (MRAM) because of its great potential as a future nonvolatile memory. In this paper, a CMOS macro-model for MRAM cell based on a twin cell structure is proposed. The READ and WRITE operations of the MTJ cell can be emulated by adopting data latch and switch blocks. The behavior of the circuit is confirmed by HSPICE simulations in a 0.35-${\mu}{\textrm}{m}$ CMOS process. We expect the macro model can be utilized to develope the core architecture and the peripheral circuitry. It can also be used for the characterization and the direction of the real MTJ cells.

• 한국정보통신설비학회:학술대회논문집
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• 한국정보통신설비학회 2006년도 하계학술대회
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• pp.205-207
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• 2006

In this paper, we present a design procedure of high linearity LNA using CMOS technology. To enhance the low linearity of the inherent CMOS transistor, we adopt the modified derivate superposition with adding external capacitor. The simulation of the designed LNA shows $IIP_3$ of +12-dBm, power gain of 13.8-dB, noise figure of 1.75-dB over the 900 MHz UHF RFID frequencies. The circuit draws the current of 4.2 mA from 1.8-V supply voltage.

• 대한전기학회논문지:전기물성ㆍ응용부문C
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• 제48권5호
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• pp.339-343
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• 1999

This paper reports the characteristics of poly-Si TFT unitary CMOS circuits fabricated with various techniques, in order to investigate the optimum process conditions. The active films were deposited by PECVD and LPCVD using $SiH_4\; and\; Si_2H_6$ as source gas, and annealed by SPC and ELA methods. The impurity doping of the oource and drain electrodes was performed by ion implantation and ion shower. In order to investigate the AC characteristics of the poly-Si TFTs processed with various methods, we have examined the current driving characteristics of the polt-Si TFT and the frequency characteristics of 23-stage CMOS ring oscillators. Ithas been observed that the circuits fabricated using $Si_2H_6$ with low-temperature process of ELA exhibit high switching speed and current driving performances, thus suitable for real application of large area electronics.