• Journal of IKEEE
• /
• v.11 no.1 s.20
• /
• pp.69-76
• /
• 2007

This paper presents the design of LVDS (Low-Voltage-Differential-Signaling) transmitter for Gb/s-per-pin operation. The proposed LVDS transmitter is designed using BiCMOS technology, which can be compatible with CMOS technology. To reduce chip area and enhance the robustness of LVDS transmitter, the MOS switches of transmitter are replaced with lateral bipolar transistor. The common emitter current gain($\beta$) of designed bipolar transistor is 20 and the cell size of LVDS transmitter is $0.01mm^2$. Also the proposed LVDS driver is operated at 1.8V and the maximum data rate is 2.8Gb/s approximately In addition, a novel ESD protection circuit is designed to protect the ESD phenomenon. This structure has low latch-up phenomenon by using turn on/off character of P-channel MOSFET and low triggering voltage by N-channel MOSFET in the SCR structure. The triggering voltage and holding voltage are simulated to 2.2V, 1.1V respectively.

• Journal of the Institute of Electronics and Information Engineers
• /
• v.51 no.10
• /
• pp.64-71
• /
• 2014

Multiplier performs a complex arithmetic operation in various signal processing algorithms such as multimedia and communication system. The multiplier also suffers from its relatively large signal propagation delay, high power dissipation, and large area requirement. This paper presents memristor-CMOS based reconfigurable multiplier reducing area occupation of the multiplier circuitry and increasing compatibility using optimized bit-width for various applications. The performance of the memristor-CMOS based reconfigurable multiplier are estimated with memristor SPICE model and 180 nm CMOS process under 1.8 V supply voltage. The circuit shows performance improvement of 61% for area, 38% for delay and 28% for power consumption respectively compared with the conventional reconfigurable multipliers. It also has an advantage for area reduction of 22% against a twin-precision multiplier.

• The Journal of Korea Institute of Information, Electronics, and Communication Technology
• /
• v.13 no.1
• /
• pp.8-16
• /
• 2020

In this paper, a single-bit 2nd-order delta-sigma modulator with the architecture of cascaded-of-integrator feedforward (CIFF) is proposed for column-parallel analog-to-digital converter (ADC) array used in a low noise CMOS image sensor. The proposed modulator implements two switched capacitor integrators and a single-bit comparator within only 10-㎛ column-pitch for column-parallel ADC array. Also, peripheral circuits for driving all column modulators include a non-overlapping clock generator and a bias circuit. The proposed delta-sigma modulator has been implemented in a 110-nm CMOS process. It achieves 88.1-dB signal-to-noise-and-distortion ratio (SNDR), 88.6-dB spurious-free dynamic range (SFDR), and 14.3-bit effective-number-of-bits (ENOB) with an oversampling ratio (OSR) of 418 for 12-kHz bandwidth. The area and power consumption of the delta-sigma modulator are 970×10 ㎛2 and 248 ㎼, respectively.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
• /
• 2010.05a
• /
• pp.788-791
• /
• 2010

We design 64-bit ROM IP for RFID tag chips using printed CMOS non-volatile memory IP design technology for a printed CMOS process. The proposed 64-bit ROM circuit is using ETRI's $0.8{\mu}m$ CMOS porocess, and is expected to reduce process complexity and cost of RFID tag chips compared to that using a conventional silicon fabrication based on a complex lithography process because the poly layer in a gate terminal is using printing technology of imprint process. And a BL precharge circuit and a BL sense amplifier is not required for the designed cell circuit since it is composed of a transmission gate instead of an NMOS transistor of the conventional ROM circuit. Therefore an output datum is only driven by a DOUT buffer circuit. The Operation current and layout area of the designed ROM of 64 bits with an array of 8 rows and 8 columns using $0.8{\mu}m$ ROM process is $9.86{\mu}A$ and $379.6{\times}418.7{\mu}m^2$.

• Proceedings of the IEEK Conference
• /
• 2008.06a
• /
• pp.421-422
• /
• 2008

In this paper, CMOS RF front-end circuits for an L1/L5 dual-band global positioning system (GPS)/Galileo receiver are designed in $0.13\;{\mu}m$ CMOS technology. The RF front-end circuits are composed of an RF single-to-differential low noise amplifier, an RF polyphase filter, two down-conversion mixers, two transimpedance amplifiers, a IF polyphase filter, four de-coupling capacitors. The CMOS RF front-end circuits provide gains of 43 dB and 44 dB, noise figures of 4 dB and 3 dB and consume 3.6 mW and 4.8 mW from 1.2 V supply voltage for L1 and L5, respectively.

• Journal of the Korean Institute of Telematics and Electronics
• /
• v.27 no.3
• /
• pp.137-144
• /
• 1990

We describe how single layer perceptrons and new nonsymmetry feedback type neural networks can be implemented by VLSI CMOS technology. The network described provides a flexible tool for evaluation of boolean expressions and arithmetic equations. About 50 CMOS VLSI chips with an architecture based on two neural networks have been designed and me being fabricated by 2-micrometer double metal design rules. These chips have been developed to study the potential of neural network models for the use in character recognition and for a neural compute.

• Journal of Sensor Science and Technology
• /
• v.23 no.2
• /
• pp.73-81
• /
• 2014

Silicon PIN diode radiation sensors and CMOS readout circuits were designed and fabricated in this study. The PIN diodes were fabricated using a 380-${\mu}m$-thick 4-inch n+ Si (111) wafer containing a $2-k{\Omega}{\cdot}cm$ n- thin epitaxial layer. CMOS readout circuits employed the driving and signal processes in a radiation sensor were mixed with digital logic and analog input circuits. The primary functions of readout circuits are amplification of sensor signals and the generation of the alarm signals when radiation events occur. The radiation sensors and CMOS readout circuits were fabricated in the Institute of Semiconductor Fusion Technology (ISFT) semiconductor fabrication facilities located in Kyungpook National University. The performance of the readout circuit combined with the Si PIN diode sensor was demonstrated.

• JSTS:Journal of Semiconductor Technology and Science
• /
• v.2 no.1
• /
• pp.19-29
• /
• 2002

A simple and analytical design approach for input power matched CMOS RF LNA circuits and their scaling for lower power consumption, is introduced. In spite of the simplicity of our expressions, it gives excellent agreement with numerical simulation results using commercial CAD tools for several circuit examples performed at 2.4GHz using $0.18\mu\textrm{m}$ CMOS technology. These simple and analytical results are extremely useful in that they can provide enough insights not only for designing any CMOS LNA circuits, but also for characterizing and diagnosing them whether being prototyped or manufactured.

• Journal of Korea Society of Industrial Information Systems
• /
• v.18 no.1
• /
• pp.19-24
• /
• 2013

As CMOS technology is scaled down more aggressively, the reliability mechanism (or aging effect) caused by the diffusion of metal atoms along the conductor in the direction of the electron flow, also called electromigration (EM), has become a major reliability concern. With the present of EM, it is difficult to control the current flows of the MOSFET device and interconnect. In addition, nanoscale CMOS circuits suffer from increased gate leakage current and power consumption. In this paper, the EM effects on current of the nanoscale CMOS circuits are analyzed. Finally, this paper introduces an on-chip current measurement method providing lifetime electromigration management which are designed using 45-nm CMOS predictive technology model.

• JSTS:Journal of Semiconductor Technology and Science
• /
• v.7 no.1
• /
• pp.11-19
• /
• 2007

This paper presents two novel compensation circuits for leakage current and power supply noise (PSN) in phase locked loop (PLL) using a nanometer CMOS technology. The leakage compensation circuit reduces the leakage current of the charge pump circuit which becomes more serious problem due to the thin gate oxide and small threshold voltage in nanometer CMOS technology and the PSN compensation circuit decreases the effect of power supply variation on the output frequency of VCO. The PLL design is based on a 32nm predictive CMOS technology and uses a 0.9V power supply voltage. The simulation results show that the proposed PLL achieves a 88% jitter reduction at 440MHz output frequency compared to the PLL without leakage compensator and its output frequency drift is little to 20% power supply voltage variations. The PLL has an output frequency range of $40M{\sim}725MHz$ with a multiplication range of 11023, and the RMS and peak-to-peak jitter are 5ps and 42.7ps, respectively.