• JSTS:Journal of Semiconductor Technology and Science
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• 제14권4호
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• pp.484-494
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• 2014

We describe a digitally controlled oscillator (DCO) which compensates the frequency variations for process, voltage, and temperature (PVT) variations with an accuracy of ${\pm}2.6%$ at 2.5 GHz. The DCO includes an 8 phase current-controlled ring oscillator, a digitally controlled current source (DCCS), a process and temperature (PT)-counteracting voltage regulator, and a bias current generator. The DCO operates at a center frequency of 2.5 GHz with a wide tuning range of 2.2 GHz to 3.0 GHz. At 2.8 GHz, the DCO achieves a phase noise of -112 dBc/Hz at 10 MHz offset. When it is implemented in an all-digital phase-locked loop (ADPLL), the ADPLL exhibits an RMS jitter of 8.9 ps and a peak to peak jitter of 77.5 ps. The proposed DCO and ADPLL are fabricated in 65 nm CMOS technology with supply voltages of 2.5 V and 1.0 V, respectively.

• ETRI Journal
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• 제42권5호
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• pp.781-789
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• 2020

In this study, an E-band low-noise amplifier (LNA) monolithic microwave integrated circuit (MMIC) has been designed using silicon-germanium 130-nm bipolar complementary metal-oxide-semiconductor technology to suppress unwanted signal gain outside operating frequencies and improve the signal gain and noise figures at operating frequencies. The proposed impedance-controllable filter has series (R_s) and parallel (R_p) resistors instead of a conventional inductor-capacitor (L-C) filter without any resistor in an interstage matching circuit. Using the impedance-controllable filter instead of the conventional L-C filter, the unwanted high signal gains of the designed E-band LNA at frequencies of 54 GHz to 57 GHz are suppressed by 8 dB to 12 dB from 24 dB to 26 dB to 12 dB to 18 dB. The small-signal gain S₂₁ at the operating frequencies of 70 GHz to 95 GHz are only decreased by 1.4 dB to 2.4 dB from 21.6 dB to 25.4 dB to 19.2 dB to 24.0 dB. The fabricated E-band LNA MMIC with the proposed filter has a measured S₂₁ of 16 dB to 21 dB, input matching (S₁₁) of -14 dB to -5 dB, and output matching (S₂₂) of -19 dB to -4 dB at E-band operating frequencies of 70 GHz to 95 GHz.

• JSTS:Journal of Semiconductor Technology and Science
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• 제11권2호
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• pp.121-129
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• 2011

It is progressing as new advents and remarkable developments of mobile device every year. On the upper line reason, NAND FLASH large density memory demands which can be stored into portable devices have been dramatically increasing. Therefore, the cell size of the NAND Flash memory has been scaled down by merely 50% and has been doubling density each per year. [1] However, side effects have arisen the cell distribution and reliability characteristics related to coupling interference, channel disturbance, floating gate electron retention, write-erase cycling owing to shrinking around 20nm technology. Also, FLASH controller to manage shrink effect leads to speed and current issues. In this paper, It will be introduced to solve cycling, retention and fail bit problems of sub-deep micron shrink such as Virtual negative read used in moving read, randomization. The characteristics of retention, cycling and program performance have 3 K per 1 year and 12.7 MB/s respectively. And device size is 179.32 $mm^2$ (16.79 mm ${\times}$ 10.68 mm) in 3 metal 26 nm CMOS.

• Journal of Electrical Engineering and Technology
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• 제13권1호
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• pp.501-512
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• 2018

Radio frequency identification (RFID) sensor tag provides several advantages including battery-less operation and low cost, which are suitable for long-term monitoring. This paper presents a self-powered RFID temperature sensor tag for online temperature monitoring in substation. The proposed sensor tag is used to measure and process the temperature of high voltage equipments in substation, and then wireless deliver the data. The proposed temperature sensor employs a novel phased-locked loop (PLL)-based architecture and can convert the temperature sensor in frequency domain without a reference clock, which can significantly improve the temperature accuracy. A two-stage rectifier adopts a series of auxiliary floating rectifier to boost its gate voltage for higher power conversion efficiency. The sensor tag chip was fabricated in TSMC $0.18{\mu}m$ 1P6M CMOS process. The measurement results show that the proposed temperature sensor tag achieve a resolution of $0.15^{\circ}C$/LSB and a temperature error of $-0.6/0.7^{\circ}C$ within the range from $-30^{\circ}C$ to $70^{\circ}C$. The proposed sensor tag achieves maximum communication distance of 11.8 m.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2013년도 제45회 하계 정기학술대회 초록집
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• pp.214.2-214.2
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• 2013

Device performance for the 45 and 32 nm node CMOS technology requires the integration of ultralow-k materials. To lower the dielectric constant for PECVD and spin-on materials, partial replacement of the solid network with air (k=1.01) appears to be more intuitive and direct option. This can be achieved introducting of second "labile" phase during depositoin that is removed during a subsequent UV curing and annealing step. Besides, with shrinking line dimensions the resistivity of barrier films cannot meet the International Technology Roadmap for Semiconductors (ITRS) requirements. To solve this issue self-forming diffusion barriers have drawn attention for great potential technique in meeting all ITRS requirments. In this present work, we report a Cu-V alloy as a materials for the self-forming barrier process. And we investigated diffusion barrier properties of self-formed layer on low-k dielectrics with or without UV curing treatment. Cu alloy films were directly deposited onto low-k dielectrics by co-sputtering, followed by annealing at various temperatures. X-ray diffraction revealed Cu (111), Cu (200) and Cu (220) peaks for both of Cu alloys. The self-formed layers were investigated by transmission electron microscopy. In order to compare barrier properties between V-based interlayer on low-k dielectric with UV curing and interlayer on low-k dielectric without UV curing, thermal stability was measured with various heat treatment temperature. X-ray photoelectron spectroscopy analysis showed that chemical compositions of self-formed layer. The compositions of the V based self-formed barriers after annealing were strongly dominated by the O concentration in the dielectric layers.

• 센서학회지
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• 제30권2호
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• pp.114-118
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• 2021

In this study, the sensitivity of an active pixel sensor (APS) was adjusted by employing a gate/body-tied (GBT) p-channel metal-oxide semiconductor field-effect transistor (PMOSFET)-type photodetector with a transfer gate. A GBT PMOSFET-type photodetector can amplify the photocurrent generated by light. Consequently, APSs that incorporate GBT PMOSFET-type photodetectors are more sensitive than those APSs that are based on p-n junctions. In this study, a transfer gate was added to the conventional GBT PMOSFET-type photodetector. Such a photodetector can adjust the sensitivity of the APS by controlling the amount of charge transmitted from the drain to the floating diffusion node according to the voltage of the transfer gate. The results obtained from conducted simulations and measurements corroborate that, the sensitivity of an APS, which incorporates a GBT PMOSFET-type photodetector with a built-in transfer gate, can be adjusted according to the voltage of the transfer gate. Furthermore, the chip was fabricated by employing the standard 0.35 ㎛ complementary metal-oxide semiconductor (CMOS) technology, and the variable sensitivity of the APS was thereby experimentally verified.

• 한국정보전자통신기술학회논문지
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• 제14권6호
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• pp.479-486
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• 2021

본 논문에서는 신호감지회로(Signal Sensing Circuit : SSC)를 추가하여 2개의 루프로 구성된 단일 커패시터 루프필터를 가진 극소형 위상고정루프(Phase Locked Loop : PLL)를 제안하였다. 위상고정루프 크기를 극단적으로 줄이기 위하여 가장 많은 면적을 차지하는 수동소자 루프필터를 극소형 단일 커패시터(2pF)로 설계하였다. 신호감지회로가 포함된 내부 부궤환 루프 출력이 외부 부궤환 루프의 단일 커패시터 루프필터 출력에 부궤환 역할을 하여 제안한 극소형 위상고정루프가 안정적으로 동작하도록 설계하였다. 위상고정루프 출력 신호 변화를 감지하는 신호 감지 회로는 루프필터의 커패시턴스 전하량을 조절하여 위상고정루프 출력 주파수의 초과 위상변이를 줄였다. 제안된 구조는 기존 구조에 비해 1/78 정도의 작은 커패시터를 가짐에도 불구하고 지터 크기는 10% 정도 차이가 난다. 본 논문의 위상고정루프는 1.8V 180nm 공정을 사용하였고, Spice를 통해 안정하게 동작하는 시뮬레이션 결과를 보여주었다.

• 센서학회지
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• 제33권2호
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• pp.112-116
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• 2024

Gas-sensor technology for volatile organic compounds (VOC) biomarker detection offers significant advantages for noninvasive diagnostics, including rapid response time and low operational costs, exhibiting promising potential for disease diagnosis. Colorimetric gas sensors, which enable intuitive analysis of gas concentrations through changes in color, present additional benefits for the development of personal diagnostic kits. However, the traditional method of visually monitoring these sensors can limit quantitative analysis and consistency in detection threshold evaluation, potentially affecting diagnostic accuracy. To address this, we developed a machine vision platform based on metal-organic framework (MOF) for colorimetric gas sensor arrays, designed to accurately detect disease-related VOC biomarkers. This platform integrates a CMOS camera module, gas chamber, and colorimetric MOF sensor jig to quantitatively assess color changes. A specialized machine vision algorithm accurately identifies the color-change Region of Interest (ROI) from the captured images and monitors the color trends. Performance evaluation was conducted through experiments using a platform with four types of low-concentration standard gases. A limit-of-detection (LoD) at 100 ppb level was observed. This approach significantly enhances the potential for non-invasive and accurate disease diagnosis by detecting low-concentration VOC biomarkers and offers a novel diagnostic tool.

• 센서학회지
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• 제28권1호
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• pp.41-46
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• 2019

In order to develop novel thermal imaging materials for microbolometer applications, $[(Ni_{0.3}Mn_{0.7})_{1-x}Cu_x]_3O_4$ ($0.18{\leq}x{\leq}0.26$) thin films were fabricated using metal-organic decomposition. Effects of Cu content on the electrical properties of the annealed films were investigated. Spinel thin films with a thickness of approximately 100 nm were obtained from the $[(Ni_{0.3}Mn_{0.7})_{1-x}Cu_x]_3O_4$ films annealed at $380^{\circ}C$ for five hours. The resistivity (${\rho}$) of the annealed films was analyzed with respect to the small polaron hopping model. Based on the $Mn^{3+}/Mn^{4+}$ ratio values obtained through x-ray photoelectron spectroscopy analysis, the hopping mechanism between $Mn^{3+}$ and $Mn^{4+}$ cations discussed in the proposed study. The effects of $Cu^+$ and $Cu^{2+}$ cations on the hopping mechanism is also discussed. Obtained results indicate that $[(Ni_{0.3}Mn_{0.7})_{1-x}Cu_x]_3O_4$ thin films with low temperature annealing and superior electrical properties (${\rho}{\leq}54.83{\Omega}{\cdot}cm$, temperature coefficient of resistance > -2.62%/K) can be effectively employed in applications involving complementary metal-oxide semiconductor (CMOS) integrated microbolometer devices.

• 한국전자파학회논문지
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• 제23권4호
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• pp.475-483
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• 2012

본 논문은 차세대 재구성 전력증폭기용을 위해서, 새로운 타입의 다중 모드 혼합형 전압 공급기를 제안한다. 이를 위한 핵심 회로인 스위칭 증폭기의 새로운 구조를 제안하였다. 혼합형 전압 공급기의 가장 중요한 성능지표 중의 하나인 효율을 증가시키기 위해 멀티 스위칭 증폭기 구조를 이용하였고, 또한 다중 모드 구현을 위해서 멀티 스위칭 증폭기와 입력 신호 검출단을 이용하였다. 성능 비교를 위해서 기본 구조를 지닌 혼합형 가변전압 공급기도 같이 설계되었으며, 새롭게 제안하는 구조 이외에는 모두 동일하게 설계하여 비교를 용이하도록 하였다. 설계된 혼합형 전압 공급기의 효율을 측정하기 위해 384 kHz/3.84 MHz/5 MHz 대역폭을 가지는 EDGE, WCDMA, LTE 신호를 적용하였다. EDGE를 적용한 효율은 85 %, WCDMA를 적용한 효율은 84 % 그리고 LTE를 적용한 효율은 79 %의 결과를 얻게 되었다. 이는 기본 구조보다 최대 9 %의 성능 향상을 얻었으며, 차세대 재구성 송신기인 다중 대역 및 다중 모드 송신기 구현에 적용 가능함을 입증한다.