• Journal of Electrical Engineering and information Science
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• v.2 no.5
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• pp.17-26
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• 1997

Interconnect characterization on a wafer level was performed. Test patterns for single, two-coupled, and triple-coupled lines ere designed by using 0.5$\mu\textrm{m}$ CMOS process. Then interconnect capacitances and resistances were experimentally extracted by using tow port network measurements, Particularly to eliminate parasitic effects, the Y-parameter de-embedding was performed with specially designed de-embedding patterns. Also, for the purpose of comparisons, capacitance matrices were calculated by using the existing CAD model and field-solver-based commercial simulator, METAL and MEDICI. This work experimentally verifies that existing CAD models or parameter extraction may have large deviation from real values. The signal transient simulation with the experimental data and other methodologies such as field-solver-based simulation and existing model was performed. as expected, the significantly affect on the signal delay and crosstalk. The signal delay due to interconnects dominates the sub-micron-based a gate delay (e.g., inverter). Particularly, coupling capacitance deviation is so large (about more than 45% in the worst case) that signal integrity cannot e guaranteed with the existing methodologies. The characterization methodologies of this paper can be very usefully employed for the signal integrity verification or he electrical design rule establishments of IC interconnects in the industry.

• Vacuum Magazine
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• v.3 no.3
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• pp.15-18
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• 2016

In future wearable electronic systems, 3-dimensional (3D) devices have attracted much attention due to their high density integration and low-power functionality. Among 3D devices, gate-all-around (GAA) nanowire transistor provides superior gate controllability, resulting in suppressing short channel effect and other drawbacks in 2D metal-oxide-semiconductor field-effect transistor (MOSFET). Silicon nanowires (SiNWs) are the most promising building block for GAA structure device due to their compatibility with the current Si-based ultra large scale integration (ULSI) technology. Moreover, the theoretical limit for subthreshold swing (SS) of MOSFET is 60 mV/dec at room temperature, which causes the increase in Ioff current. To overcome theoretical limit for the SS, it is crucial that research into new types of device concepts should be performed. In our present studies, we have experimentally demonstrated feedback FET (FBFET) and tunnel FET (TFET) with sub-60 mV/dec based on SiNWs. Also, we fabricated SiNW based complementary TFET (c-TFET) and SiNW complementary metal-oxide-semiconductor (CMOS) inverter. Our research demonstrates the promising potential of SiNW electronic devices for future wearable electronic systems.

• Journal of IKEEE
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• v.11 no.4
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• pp.129-136
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• 2007

In this paper, a simple but effective Dataline Redundancy Circuit (DRC) is proposed for a dual-port 1T-SRAM embedded in Display ICs. The DRC designed in the dual-port $320{\times}120{\times}18$-bit 1T-SRAM is verified in a 0.18-um CMOS 1T-SRAM process. In the DRC, because its control logic circuit can be implemented by a simple Shift Logic Circuit (SLC) with only an inverter and a NAND that is much simpler than the conventional, it can be placed in a pitch as narrow as a bit line pair. Moreover, an improved version of the SLC is also proposed to reduce its worst-case delay from 12.3ns to 5.9ns by 52%. By doing so, the timing overhead of the DRC can be hidden under the row cycle time because switching of the datalines can be done between the times of the word line setup and the sense amplifier setup. The area overhead of the DRC is estimated about 7.6% in this paper.

• Journal of the Institute of Electronics Engineers of Korea SC
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• v.44 no.1
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• pp.74-84
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• 2007

This paper presents a new dual-loop Delay Locked Loop(DLL) to expand the delay lock range of a conventional DLL. The proposed dual-loop DLL contains a Coarse_loop and a Fine_loop, and its operation utilizes one of the loops selected by comparing the initial time-difference among the reference clock and 2 internal clocks. The 2 internal clock signals are taken, respectively, at the midpoint and endpoint of a VCDL and thus are $180^{\circ}$ separated in phase. When the proposed DLL is out of the conventional lock range, the Coarse_loop is selected to push the DLL in the conventional lock range and then the Fine_loop is used to complete the locking process. Therefore, the proposed DLL is always stably locked in unless it is harmonically false-locked. Since the VCDL employed in the proposed DLL needs two control voltages to adjust the delay time, it uses TG-based inverters, instead of conventional, multi-stacked, current-starved inverters, to compose the delay line. The new VCDL provides a wider delay range than a conventional VCDL In overall, the proposed DLL demonstrates a more than 2 times wider lock range than a conventional DLL. The proposed DLL circuits have been designed, simulated and proved using 0.18um, 1.8V TSMC CMOS library and its operation frequency range is 100MHz${\sim}$1GHz. Finally, the maximum phase error of the DLL locked in at 1GHz is less than 11.2ps showing a high resolution and the simulated power consumption is 11.5mW.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.19 no.1
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• pp.149-155
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• 2015

This paper proposes 5-MS/s 10-bit digital-to-analog converter(DAC) with the improved linearity. The proposed DAC consists of a 10-bit R-2R-based DAC, an output buffer using a differential voltage amplifier with rail-to-rail input range, and a band-gap reference circuit for the bias voltage. The linearity of the 10-bit R-2R DAC is improved as the resistor of 2R is implemented by including the turn-on resistance of an inverter for a switch. The output voltage range of the DAC is determined to be $2/3{\times}VDD$ from an rail-to-rail output voltage range of the R-2R DAC using a differential voltage amplifier in the output buffer. The proposed DAC is implemented using a 1-poly 8-metal 130nm CMOS process with 1.2-V supply. The measured dynamic performance of the implemented DAC are the ENOB of 9.4 bit, SNDR of 58 dB, and SFDR of 63 dBc. The measured DNL and INL are less than +/-0.35 LSB. The area and power consumption of DAC are $642.9{\times}366.6{\mu}m^2$ and 2.95 mW, respectively.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.31 no.3
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• pp.129-134
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• 2018

Herein, we report the manufacture of high-performance, ambipolar organic field-effect transistors (OFETs) and complementary-like electronic circuitry based on a blended, polymeric, semiconducting film. Relatively high and well-balanced electron and hole mobilities were achieved by incorporating a small amount of ionic additives. The equivalent P-channel and N-channel properties of the ambipolar OFETs enabled the manufacture of complementary-like inverter circuits with a near-ideal switching point, high gain, and good noise margins, via a simple blanket spin-coating process with no additional patterning of each active P-type and N-type semiconductor layer.

• JSTS:Journal of Semiconductor Technology and Science
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• v.16 no.1
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• pp.91-105
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• 2016

Carbon Nanotube Field-Effect Transistors (CNTFETs) have been studied as candidates for post Si CMOS owing to the better electrostatic control and high mobility. To enhance the immunity against short - channel effects (SCEs), the novel channel and gate engineered architectures have been proposed to improve CNTFETs performance. This work presents a comprehensive study of the influence of channel and gate engineering on the CNTFET switching, high frequency and circuit level performance of carbon nanotube field-effect transistors (CNTFETs). At device level, the effects of channel and gate engineering on the switching and high frequency characteristics for CNTFET have been theoretically investigated by using a quantum kinetic model. This model is based on two-dimensional non-equilibrium Green's functions (NEGF) solved self - consistently with Poisson's equations. It is revealed that hetero - material - gate and lightly doped drain and source CNTFET (HMG - LDDS - CNTFET) structure can significantly reduce leakage current, enhance control ability of the gate on channel, improve the switching speed, and is more suitable for use in low power, high frequency circuits. At circuit level, using the HSPICE with look - up table(LUT) based Verilog - A models, the impact of the channel and gate engineering on basic digital circuits (inverter, static random access memory cell) have been investigated systematically. The performance parameters of circuits have been calculated and the optimum metal gate workfunction combinations of ${\Phi}_{M1}/{\Phi}_{M2}$ have been concluded in terms of power consumption, average delay, stability, energy consumption and power - delay product (PDP). In addition, we discuss and compare the CNTFET-based circuit designs of various logic gates, including ternary and binary logic. Simulation results indicate that LDDS - HMG - CNTFET circuits with ternary logic gate design have significantly better performance in comparison with other structures.