• 전자공학회논문지C
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• 제34C권2호
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• pp.1-11
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• 1997

We developed a base station modulator ASIC for CDMA digital cellular system. In CDMA digital cellular system, the modulation is performed by convolutional encoding and QPSK with spread spectrum. The function blocks of base station modulator are CRC, convolutional encoder, interleaver pseudo-moise scrambler, power control bit puncturing, walsh cover, QPSK, gain controller, combiner and multiplexer. Each function block was designed by the logic synthesis of VHDL codes. The VHDL code was described at register transfer level and the size of code is about 8,000 lines. The circuit simulation and logic simulation were performed by COMPASS tools. The chip (ES-C2212B CMB) contains 25,205 gates and 3 Kbit SRAM, and its chip size is 5.25 mm * 5,45 mm in 0.8 mm CMOS cell-based design technology. It is packaged in 68 pin PLCC and the power dissipation at 10MHz is 300 mW at 5V. The ASIC has been fully tested and successfully working on the CDMA base station system.

• 센서학회지
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• 제15권2호
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• pp.112-119
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• 2006

Resolution of an image sensor is very significant parameter to improve. It is hard to improve the resolution of the CMOS vision chip for edge detection based on a biological retina using a resistive network because the vision chip contains additional circuits such as a resistive network and some processing circuits comparing with general image sensors such as CMOS image sensor (CIS). In this paper, we proved the problem of low resolution by separating photo-sensing and signal processing circuits. This type of vision chips occurs a problem of low operation speed because the signal processing circuits should be commonly used in a row of the photo-sensors. The low speed problem of operation was proved by using a reset decoder. A vision chip for edge detection with $128{\times}128$ pixel array has been designed and fabricated by using $0.35{\mu}m$ 2-poly 4-metal CMOS technology. The fabricated chip was integrated with optical lens as a camera system and investigated with real image. By using this chip, we could achieved sufficient edge images for real application.

• 전자공학회논문지A
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• 제33A권4호
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• pp.136-141
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• 1996

In this paper, a new CMOS on-chip current reference circit for memory, operational amplifiers, comparators, and data converters is proposed. The reference current is almost independent of temeprature and power-supply variations. In the proposed circuit, the current component with a positive temeprature coefficient cancels that with a negative temperature coefficient each other. While conventional curretn and voltage reference circuits require BiCMOS or bipolar process, the presented circuit can be integrated on a single chip with other digiral and analog circits using a standard CMOS process and an extra mask is not needed. The prototype is fabricated employing th esamsung 1.0um p-well double-poly double-metal CMOS process and the chip area is 300um${\times}$135 um. The proposed reference current circuit shows the temperature coefficient of 380 ppm/.deg. C with the temperature changes form 30$^{\circ}C$ to 80$^{\circ}C$, and the output variation of $\pm$ 1.4% with the supply voltage changes from 4.5 V to 5.5 V.

• 대한전자공학회논문지
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• 제22권5호
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• pp.50-56
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• 1985

A common failure mechanism in bulk CMOS integrated circuits is the latch-up of parasitic SCR structure inherent in the bulk CMOS structure. Latch-up triggering and holding charac-teristics have been measured in the test devicrs which include conventional and Schottky-damped CMOS structures with various well depths and n+/p+ spacings. It is demonstrated that Schottky-clamped CMOS is more latch-up immune than conventional bulk CMOS. Finally, the simulation results by circuit simulation program (SPICE) are compared with measured results in order to verify the validity of the latch-up modal composed of nan, pnp transistors and two external resistors.

• Transactions on Electrical and Electronic Materials
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• 제12권5호
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• pp.175-188
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• 2011

As complementary metal-oxide semiconductor (CMOS) continues to scale down deeper into the nanoscale, various device non-idealities cause the I-V characteristics to be substantially different from well-tempered metal-oxide semiconductor field-effect transistors (MOSFETs). The last few years witnessed a dramatic increase in nanotechnology research, especially the nanoelectronics. These technologies vary in their maturity. Carbon nanotubes (CNTs) are at the forefront of these new materials because of the unique mechanical and electronic properties. CNTFET is the most promising technology to extend or complement traditional silicon technology due to three reasons: first, the operation principle and the device structure are similar to CMOS devices and it is possible to reuse the established CMOS design infrastructure. Second, it is also possible to reuse CMOS fabrication process. And the most important reason is that CNTFET has the best experimentally demonstrated device current carrying ability to date. This paper discusses and reviewsthe feasibility of the CNTFET's application at this point of time in integrated circuits design by investigating different types of circuit blocks considering the advantages that the CNTFETs offer.

• 대한전자공학회:학술대회논문집
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• 대한전자공학회 2002년도 하계종합학술대회 논문집(5)
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• pp.247-250
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• 2002

This paper proposes a PWM circuit using CMOS OTAs. The features of the proposed PWM circuit are IC oriented circuits, simple configuration, and bias current controlled output. In order to verily the validity of the proposed circuit, it is simulated by H-SPICE program. Futhermore, the proposed circuit is integrated on chip using 0.35 $\mu\textrm{m}$ CMOS technology.

• 대한전자공학회논문지SD
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• 제38권4호
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• pp.285-291
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• 2001

단열회로를 이용한 8-b×8-b 파이프라인 승산기와 4가지 위상을 가지는 전원클럭을 공급하기 위한 개선 된 구조의 전원클럭 발생기를 설계하였다. 전원클럭 신호선의 전하는 복원되어 에너지 소모를 줄인다. 단열회로는 ECRL 형태를 기본으로 하였으며 0.6㎛ CMOS 공정을 사용하여 설계하였다. 개선된 전원클럭 발생기는 기존회로보다 4∼11% 정도 효율이 높았다. 모의실험결과 제안하는 단열회로 승산기는 CMOS 승산기보다 2.6∼3.5배 정도의 에너지를 감소시켰다.

• JSTS:Journal of Semiconductor Technology and Science
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• 제15권3호
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• pp.381-389
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• 2015

A fully integrated multistandard multiband CMOS mobile TV tuner with small silicon area and low power consumption is proposed for receiving multiple mobile digital TV signals and FM signal. In order to reduce the silicon area of the multistandard multiband receiver, other RF front-end circuits except LNAs are shared and a local oscillator (LO) signal generation architecture with a single VCO for a frequency synthesizer is proposed. To reduce the low frequency noise and the power consumption, a vertical NPN BJT is used in an analog baseband circuits. The RF tuner IC is implemented in a $0.18-{\mu}m$ CMOS technology. The RF tuner IC satisfies all specifications for DVB-H/T, T-DMB, and ISDB-T with a sufficient margin and a successful demonstration has been carried out for DVB-H/T, T-DMB, and ISDB-T with a digital demodulator.

• Journal of Semiconductor Engineering
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• 제1권3호
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• pp.81-87
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• 2020

An instrumentation amplifier (IA) and an analog-to-digital converter (ADC) are essential circuit blocks for accurate and robust sensor readout systems. This paper introduces recent advances in radiation-hardening by design (RHBD) techniques applied for the sensor readout integrated circuits (IC), e.g., the three-op-amp IA and the successive-approximation register (SAR) ADC, operating against total ionizing dose (TID) and singe event effect (SEE) in harsh radiation environments. The radiation-hardened IA utilized TID monitoring and adaptive reference control to compensate for transistor parameter variations due to radiation effects. The radiation-hardened SAR ADC adopts delay-based double-feedback flip-flops to prevent soft errors which flips the data bits. Radiation-hardened IA and ADC were verified through compact model simulation, and fabricated CMOS chips were measured in radiation facilities to confirm their radiation tolerance.

• ETRI Journal
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• 제33권3호
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• pp.393-400
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• 2011

A systematic approach for the design of two-stage class AB CMOS unity-gain buffers is proposed. It is based on the inclusion of a class AB operation to class A Miller amplifier topologies in unity-gain negative feedback by a simple technique that does not modify quiescent currents, supply requirements, noise performance, or static power. Three design examples are fabricated in a 0.5 ${\mu}m$ CMOS process. Measurement results show slew rate improvement factors of approximately 100 for the class AB buffers versus their class A counterparts for the same quiescent power consumption (< 200 ${\mu}W$).