• Title/Summary/Keyword: CMOS integrated circuits

Search Result 147, Processing Time 0.03 seconds

Design of Circuit for a Fingerprint Sensor Based on Ridge Resistivity

  • Jung, Seung-Min
    • Journal of information and communication convergence engineering
    • /
    • v.6 no.3
    • /
    • pp.270-274
    • /
    • 2008
  • This paper proposes an advanced signal processing circuit for a fingerprint sensor based on ridge resistivity. A novel fingerprint integrated sensor using ridge resistivity variation resulting from ridges and valleys on the fingertip is presented. The pixel level simple detection circuit converts from a small and variable sensing current to binary voltage out effectively. The sensor circuit blocks were designed and simulated in a standard CMOS 0.35 ${\mu}m$ process.

Design of a Built-In Current Sensor for CMOS IC Testing (CMOS 집적회로의 테스팅을 위한 새로운 내장형 전류감지 회로의 설계)

  • Hong, Seung-Ho;Kim, Jeong-Beom
    • Proceedings of the KIEE Conference
    • /
    • 2003.11b
    • /
    • pp.271-274
    • /
    • 2003
  • This paper presents a Built-in Current Sensor that detect defects in CMOS integrated circuits using the current testing technique. This scheme employs a cross-coupled connected PMOS transistors, it is used as a current comparator. Our proposed scheme is a negligible impart on the performance of the circuit undo. test (CUT). In addition, in the normal mode of the CUT not dissipation extra power, high speed detection time and applicable deep submicron process. The validity and effectiveness are verified through the HSPICE simulation on circuits with defects. The entire area of the test chip is $116{\times}65{\mu}m^2$. The BICS occupies only $41{\times}17{\mu}m^2$ of area in the test chip. The area overhead of a BICS versus the entire chip is about 9.2%. The chip was fabricated with Hynix $0.35{\mu}m$ 2-poly 4-metal N-well CMOS technology.

  • PDF

Design of a Built-In Current Sensor for IDDQ Testing (IDDQ 테스팅을 위한 내장형 전류 감지 회로 설계)

  • Kim, Jeong-Beom;Hong, Sung-Je;Kim, Jong
    • Journal of the Korean Institute of Telematics and Electronics C
    • /
    • v.34C no.8
    • /
    • pp.49-63
    • /
    • 1997
  • This paper presents a current sensor that detects defects in CMOS integrated circuits using the current testing technique. The current sensor is built in a CMOS integrated circuit to test an abnormal current. The proposed circuit has a very small impact on the performance of the circuit under test during the normal mode. In the testing mode, the proposed circuit detects the abnormal current caused by permanent manufacturing defects and determines whether the circuit under test is defect-free or not. The proposed current sensor is simple and requires no external voltage and current sources. Hence, the circuit has less area and performance degradation, and is more efficient than any previous works. The validity and effectiveness are verified through the HSPICE simulation on circuits with defects.

  • PDF

Silicon-based 0.69-inch AMOEL Microdisplay with Integrated Driver Circuits

  • Na, Young-Sun;Kwon, Oh-Kyong
    • Journal of Information Display
    • /
    • v.3 no.3
    • /
    • pp.35-43
    • /
    • 2002
  • Silicon-based 0.69-inch AMOEL microdisplay with integrated driver and timing controller circuits for microdisplay applications has been developed using 0.35 ${\mu}m$ l-poly 4-metal standard CMOS process with 5 V CMOS devices and CMP (Chemical Mechanical Polishing) technology. To reduce the large data programming time consumed in a conventional current programming pixel circuit technique and to achieve uniform display, de-amplifying current mirror pixel circuit and the current-mode data driver circuit with threshold roltage compensation are proposed. The proposed current-mode data driver circuit is inherently immune to the ground-bouncing effect. The Monte-Carlo simulation results show that the proposed current-mode data driver circuit has channel-to-channel non-uniformity of less than ${\pm}$0.6 LSB under ${\pm}$70 mV threshold voltage variaions for both NMOS and PMOS transistors, which gives very good display uniformity.

Potentiostat circuits for amperometric sensor (전류법 기반 센서의 정전압 분극 장치 회로)

  • Lim, Shin-Il
    • Journal of Sensor Science and Technology
    • /
    • v.18 no.1
    • /
    • pp.95-101
    • /
    • 2009
  • A simple and new CMOS potentiostat circuit for amperometric sensor is described. To maintain a constant potential between the reference and working electrodes, only one differential difference amplifier (DDA) is needed in proposed design, while conventional potentiosatat requires at least 2 operational amplifiers and 2 resistors, or more than 3 operational amplifiers and 4 resistors for low voltage CMOS integrated potentiostat. The DDA with rail-to-rail design not only enables the full range operation to supply voltage but also provides simple potentiostat system with small hardwares and low power consumption.

A 1.2-V 0.18-${\mu}m$ Sigma-Delta A/D Converter for 3G wireless Applications

  • Kim, Hyun-Joong;Jung, Tae-Sung;Yoo, Chang-sik
    • Proceedings of the IEEK Conference
    • /
    • 2006.06a
    • /
    • pp.627-628
    • /
    • 2006
  • A low-voltage switched-capacitor $2^{nd}$-order $\Sigma\Delta$ modulator using full feed-forward is introduced. It has two advantages: the unity signal transfer function and reduced signal swings inside the $\Sigma\Delta$ loop. These features greatly relax the DC gain and output swing requirements for Op-Amp in the low-voltage $\Sigma\Delta$ modulator. Implemented by a 0.18-${\mu}m$ CMOS technology, the $\Sigma\Delta$ modulator satisfies performance requirements for WCDMA and CDMA2000 standards.

  • PDF

High performance inkjet printed polymer CMOS integrated circuits

  • Baeg, Kang-Jun;Kim, Dong-Yu;Koo, Jae-Bon;Jung, Soon-Won;You, In-Kyu;Noh, Yong-Young
    • 한국정보디스플레이학회:학술대회논문집
    • /
    • 2009.10a
    • /
    • pp.67-70
    • /
    • 2009
  • Printed electronics are emerging technology to realize various microelectronic devices via a cost-effective method. Here we introduce high performance inkjet printed polymer field-effect transistors and application to complementary integrated circuits with p-type and n-type conjugated polymers. The performance of devices highly depends on the selection of dielectrics, printing condition and device architecture. The device optimization and performances of various integrated circuits, e.g., complementary inverters and ring oscillators will be mainly discussed in this talk.

  • PDF

A High Frequency Op-amp for High Speed Signal Processing (고속신호처리를 위한 고주파용 Op-Amp 설계)

  • 신건순
    • Journal of the Korea Institute of Information and Communication Engineering
    • /
    • v.6 no.1
    • /
    • pp.25-29
    • /
    • 2002
  • There is an increasing interest in high-speed signal processing in modern telecommunication and SC circuit, HDTV, ISDN. There are many methods of high-speed signal processing. This paper describes a design approach for the realization of high-frequency Op-amp in CMOS technology. A limiting factor in Op-amp based analog integrated circuits is the limited useful frequency range. this thesis will develop a CMOS op-amp architecture with improved gainband width product with this technique an op-amp will achieve up to 170MHz (CL=2pF) unity-gain frequency with a 1.2-micron design rule. This CMOS op-amp is particularly suitable for achieving wide and stable closed-loop band widths, such as required in high-frequency SC filters, high-speed analog circuits.

A Low-Voltage High-Performance CMOS Feedforward AGC Circuit for Wideband Wireless Receivers

  • Alegre, Juan Pablo;Calvo, Belen;Celma, Santiago
    • ETRI Journal
    • /
    • v.30 no.5
    • /
    • pp.729-734
    • /
    • 2008
  • Wireless communication systems, such as WLAN or Bluetooth receivers, employ preamble data to estimate the channel characteristics, introducing stringent settling-time constraints. This makes the use of traditional closed-loop feedback automatic gain control (AGC) circuits impractical for these applications. In this paper, a compact feedforward AGC circuit is proposed to obtain a fast-settling response. The AGC has been implemented in a 0.35 ${\mu}m$ standard CMOS technology. Supplied at 1.8 V, it operates with a power consumption of 1.6 mW at frequencies as high as 100 MHz, while its gain ranges from 0 dB to 21 dB in 3 dB steps through a digital word. The settling time of the circuit is below 0.25 ${\mu}s$.

  • PDF

Design of a TRIAC Dimmable LED Driver Chip with a Wide Tuning Range and Two-Stage Uniform Dimming

  • Chang, Changyuan;Li, Zhen;Li, Yuanye;Hong, Chao
    • Journal of Power Electronics
    • /
    • v.18 no.2
    • /
    • pp.640-650
    • /
    • 2018
  • A TRIAC dimmable LED driver with a wide tuning range and a two-stage uniform dimming scheme is proposed in this paper. To solve the restricted dimming range problem caused by the limited conduction ratio of TRIAC dimmers, a conduction ratio compensation technique is introduced, which can increase the output current up to the rated output current when the TRIAC dimmer turns to the maximum conduction ratio. For further optimization, a two-stage uniform dimming diagram with a rapid dimming curve and a slow dimming curve is designed to make the LED driver regulated visually uniform in the whole adjustable range of the TRIAC dimmer. The proposed control chip is fabricated in a TSMC $0.35{\mu}m$ 5V/650V CMOS/LDMOS process, and verified on a 21V/500mA circuit prototype. The test results show that, in the 90V/60Hz~132V/60Hz ac input range, the voltage linear regulation is 2.6%, the power factor is 99.5% and the efficiency is 83%. Moreover, in the dimming mode, the dimming rate is less than 1% when the maximum dimming current is 516mA and the minimum dimming current is only about 5mA.