• Proceedings of the IEEK Conference
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• 2000.11d
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• pp.139-142
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• 2000

In this paper, the ADI (Adaptive De-interlacing) algorithm is proposed, which improves visually and subjectively horizontal and vertical edges of the image processed by the ELA(Edge Line-based Average) method. This paper also proposes a VLSI architecture for the proposed algorithm and designed the architecture through the full custom CMOS layout process. The proposed algorithm is verified using C and Matlab and implemented using 0.6$\mu\textrm{m}$ 2-poly 3-metal CMOS standard libraries. For the circuit and logic simulation, Cadence tool is used.

• Journal of information and communication convergence engineering
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• v.10 no.2
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• pp.194-199
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• 2012

This paper proposes a novel scheme of a gray scale fingerprint image for a high-accuracy capacitive sensor chip. The conventional grayscale image scheme uses a digital-to-analog converter (DAC) of a large-scale layout or charge-pump circuit with high power consumption and complexity by a global clock signal. A modified capacitive detection circuit for the charge sharing scheme is proposed, which uses a down literal circuit (DLC) with a floating-gate metal-oxide semiconductor transistor (FGMOS) based on a neuron model. The detection circuit is designed and simulated in a 3.3 V, 0.35 ${\mu}m$ standard CMOS process. Because the proposed circuit does not need a comparator and peripheral circuits, the pixel layout size can be reduced and the image resolution can be improved.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2011.05a
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• pp.692-695
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• 2011

This paper describes the possibility of a low-power, high-resolution fingerprint sensor chip. A modified capacitive detection circuit of charge sharing scheme is proposed, which reduces the static power dissipation and increases the voltage difference between a ridge and valley more than conventional circuit. The detection circuit is designed and simulated in 3.3V, $0.35{\mu}m$ standard CMOS process, 40MHz condition. The result shows about 35% power dissipation reduction and 90% improvement of difference between a ridge and valley sensing voltage. The proposed circuit is more stable and effective than a typical circuit.

• Journal of the Korean Institute of Telematics and Electronics B
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• v.31B no.4
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• pp.55-61
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• 1994

The multiple valued logic(MVL) circuit with ROM type using current mode CMOS is presented in this paper. This circuit is composed of the multiple valued-to-binary(MV/B) decoder and the selection circuit. The MV/B decoder decodes the single input multiple valued signal to N binary signal, and the selection circuits is composed N$\times$N array of the selecion cells with ROM types. The selection cell is realized with the current mirror circuits and the inhibit circuits. The presented circuit is suitable for designing the circuit of MVL functions with independent variables, and reduces the number of selection cells for designing the circuit of symmetric MVL functions as many as {($N^2$-N)/2}+N. This circuit possess features of simplicity. expansibility for array and regularity, modularity for the wire routing. Also, it is suitable for VLSI implementation.

• Proceedings of the IEEK Conference
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• 2000.07a
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• pp.347-350
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• 2000

We present the design of ternary flip-flop which is based on ternary logic so as to process ternary data. These flip-flops are fabricated with ternary voltage mode NOR, NAND, INVERTER gates. These logic gate circuits are designed using CMOS and obtained the characteristics of a lower voltage, a lower power consumption as compared to other gates. These circuits have been simulated with the electrical parameters of a standard 0.25 micron CMOS technology and 2.5 volts supply voltage. The Architecture of proposed ternary flip-flop is highly modular and well suited for VLSI implementation, only using ternary gates.

• Journal of Sensor Science and Technology
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• v.28 no.1
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• pp.17-22
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• 2019

As CMOS technology scales down, reliability is becoming an important concern for VLSI designers. This paper analyzes gate-oxide breakdowns (i.e., the time-dependent dielectric-breakdown (TDDB) aging effect) as a reliability issue for combinational circuits with 45-nm technology. This paper shows simulation results for the noise margin, delay, and power using a single inverter-chain circuit, as well as the International Symposium on Circuits and Systems (ISCAS)'85 benchmark circuits. The delay and power variations in the presence of TDDB are also discussed in the paper. Finally, we propose a novel method to compensate for the logic failure due to dielectric breakdowns: We used a higher supply voltage and a negative ground voltage for the circuit. The proposed method was verified using the ISCAS'85 benchmark circuits.

• ETRI Journal
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• v.8 no.4
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• pp.4-17
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• 1986

통신용 반도체 기술의 특징으로는 소량 다품종, 초고속화, 애널로그 회로의 집적화, 광집적회로화 등을 들 수 있다. 통신 시스팀의 실현에는 소형화, 저소비 전력화, 초고속화 등의 이유로 LSI 또는 VLSI의 적용이 대전제로 되고 있다. 본고에서는 현재 사용되고 있는 신호 처리, 신호 전송, 전달 처리, 정보 처리용의 주요 LSI에 대하여 살펴보는 한편, 통신용 반도체의 요구 조건을 만족시키기 위한 반도체 기술 중에서 설계 기술과 공정 기술에 대한 최근의 기술 동향을 살펴보고자 한다. 즉, LSI산업의 변환기를 가져오고 있는 직접회로 설계 기술인 ASIC과 함께, 집적도의 향상에 따라 애널로그기능과 디지틀기능을 하나의 칩에 형성시킬 수 있는 BiCMOS 공정기술에 대한 기술 동향을 살펴본다.

• Proceedings of the IEEK Conference
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• 2004.06b
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• pp.415-418
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• 2004

This paper describes a VLSI implementation of BLAST detection for MIMO-OFDM systems. To achieve high speed requirement, we propose the fully pipeline architecture for BLAST structure. This design is implemented using $0.18{\mu}m$ CMOS technology. For a 4-transmit and 4-receive antennas system, it takes $7.5{\mu}s$ to calculate nulling vector and detection order from 48 channel matrixes.

• 발명특허
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• v.10 no.5 s.111
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• pp.71-71
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• 1985

반도체, 컴퓨터, 통신기기 분야에서 최첨단 기술제품의 생산 공급을 통해 그동안 국내 전자산업을 선도해 온 금성반도체(대표 : 구자두)는, 지난해 6월 세계 3번째로 반주문형 초대규모 집적회로(VLSI)인 CMOS게이트 어레이를 개발하여 미국 엘에스아이 로직(LISLOGIC)사와 1억 5천만불의 수출계약을 체결함으로써 국내 최초로 주문형 반도체의 수출시대를 연데이어, 4월 10일 여의도 중심부 신한 빌딩 4층에 100여평 규모의 게이트 어레이 디자인 센터를 개관하여 특수한 반도체를 주문하는 고객이 동 제품의 회로 설계과정에 직접참여할 수 있도록 함으로써 수주활동을 본격화 하는 일대 전기를 마련하였다.

• Electrical & Electronic Materials
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• v.12 no.9
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• pp.57-63
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• 1999

SOI 구조의 MOSFET은 제조공정이 상대적으로 간단하며 CMOS 래치 업 현상이 일어나지 않고, soft error에 의한 회로의 오동작 가능성이 매우 낮은 이외에도 낮은 기생 정전용량 및 누설전류 특성을 가지므로 0.1 미크론 이하의 소자를 제작하는데 적합하여 저전압, 초고속 VLSI 설계에 적합한 소자로 각광받고 있다. 본고에서는 새로운 구조의 SOI MOSFET 구조들의 특성과 장, 단점을 검토하고 나아가 BJT(Bipolar Junction Transistor) 및 기타 소자들을 SOI 구조로 제작한 결과에 대해 간단히 검토함으로써 1999년 현재 SOI 기술의 현황을 소개하고자 한다.