• Journal of the Institute of Electronics Engineers of Korea SD
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• v.46 no.10
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• pp.79-85
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• 2009

The design of a 3.2 Gb/s serial link receiver in $0.18{\mu}m$ CMOS process is presented. The major factors limiting the performance of high-speed links are transmission channel bandwidth, timing uncertainty. The design uses a multi-level signaling(4-PAM) to overcome these problems. Moreover, to increase data bit-rate and lower BER, we designed this circuit by using a current mode amplifier, Current-mode Logic(CML) sampling latches. The 4-PAM receiver achieves 3.2 Gb/s and BER is less than $1.0\;{\times}\;10^{-12}$. The $0.5\;{\times}\;0.6\;mm^2$ chip consumes 49 mA at 3.2 Gb/s from a 1.8-V supply.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.47 no.3
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• pp.51-57
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• 2010

A dual-mode direct conversion receiver is developed in $0.13\;{\mu}m$ RF CMOS process for IEEE 802.11n based wireless LAN and IEEE 802.16e based mobile WiMAX application. The RF receiver covers the frequency band between 2.3 and 2.7 GHz. Three-step gain control is realized in LNA by using current steering technique. Current bleeding technique is applied to the down-conversion mixer in order to lower the flicker noise. A frequency divide-by-2 circuit is included in the receiver for LO I/Q differential signal generation. The receiver consumes 56 mA at 1.4 V supply voltage including all LO buffers. Measured results show a power gain of 32 dB, a noise figure of 4.8 dB, a output $P_{1dB}$ of +6 dBm over the entire band.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.21 no.9
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• pp.1045-1049
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• 2010

In this paper, we proposed an ultra-low power low noise amplifier(LNA) using a TSMC 0.18 ${\mu}m$ RF CMOS process. To satisfy the low power consumption with high gain, a current-reused technique is utilized. In addition, a low bias voltage in the subthreshold region is utilized to achieve ultra low power characteristic. The designed LNA has the voltage gain of 13.8 dB and noise figure(NF) of 3.4 dB at 2.4 GHz. The total power consumption of the designed LNA is only 0.63 mW from 0.9 V supply voltage and chip occupies $1.1\;mm{\times}0.8\;mm$ area.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2013.05a
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• pp.349-351
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• 2013

This research paper presents a low-power programmable gain amplifier (PGA) to facilitate signal processing of the detection of defects in steel plates. This circuit is able to adjust a gain in the range of 6 to 60dB in 7 steps using different signal types for various defects from hall sensors. The gain of PGA is designed by operating on-resistors of switches and passive components. The proposed PGA ($0.18{\mu}m$ CMOS process with 1.8 supply voltage) showed excellent gain error of less than -0.2dB, and low power consumption of 0.47mW.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.18 no.2 s.117
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• pp.213-218
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• 2007

In this paper, we propose the design and fabrication on high frequency CMOS VCO for DS-UWB(Direct-Sequence Ultra-WideBand) applications using 0.18 ${\mu}m$ process. The complementary cross-coupled LC oscillator architecture which is composed of PMOS, NMOS symmetrically, is designed for improving the phase noise characteristic. The resistor is used instead of current source that reduce the 1/f noise of current source. The high-speed buffer is needed for measuring the output characteristic of VCO using spectrum analyzer, therefore the high-speed inverter buffer is designed with VCO. A fabricated core VCO size is $340{\mu}m{\times}535{\mu}m$. The VCO is tunable between 7.09 and 7.52 GHz and has a phase noise lower than -107 dBc/Hz at 1-MHz offset over entire tuning range. The measured harmonic suppression is 32 dB. The VCO core circuit draws 2.0 mA from a 1.8 V supply.

• The Journal of Korean Institute of Communications and Information Sciences
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• v.38B no.6
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• pp.427-434
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• 2013

In this paper, the design and layout of a 2.5 Gbps arrayed VCSEL driver for optical transceiver having arrayed multi-channel of integrating module is confirmed. In this paper, a 4 channel 2.5 Gbps VCSEL (vertical cavity surface emitting laser) driver array with automatic optical power control is implemented using $0.18{\mu}m$ CMOS process technology that drives a $1550{\mu}m$ high speed VCSEL used in optical transceiver. To enhance the bandwidth of the optical transmitter, active feedback amplifier with negative capacitance compensation is exploited. We report a distinct improvement in bandwidth, voltage gain and operation stability at 2.5Gbps data rate in comparison with existing topology. The 4-CH chip consumes only 140 mW of DC power at a single 1.8V supply under the maximum modulation and bias currents, and occupies the die area of $850{\mu}m{\times}1,690{\mu}m$ excluding bonding pads.

• Journal of the Institute of Electronics and Information Engineers
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• v.50 no.11
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• pp.64-69
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• 2013

In this paper, a high-speed CMOS Image Sensor (CIS) based on a 10-bit two-step single-slope A/D converter is proposed. The A/D converter is composed of both a 5-bit coarse ADC and a 6-bit fine ADC, and the conversion speed is 10 times faster than that of the single-slope A/D converter. In order to have a small noise characteristics, further, a Digital Correlated Double Sampling(D-CDS) is also discussed. The proposed A/D converter has been fabricated with 0.13um 1-poly 4-metal CIS process, and it has a QVGA($320{\times}240$) resolution. The fabricated chip size is $5mm{\times}3mm$, and the power consumption is about 35mW at 3.3V supply voltage. The measured conversion speed is 10us, and the frame rate is 220 frames/s.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.23 no.11
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• pp.1297-1306
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• 2012

This work presents a 77 GHz radar transmitter for the automotive radar system. An integrated 13 GHz frequency synthesizer fabricated using 130 nm RF CMOS process drives a commercial W-band compound semiconductor monolithic multifunction amplifier(MPA), which includes a frequency multiplier by six to generate 77 GHz transmitting signal. The 13 GHz frequency synthesizer includes a high efficiency injection buffer of 4 dBm output power to drive the MPA. The output power of 77 GHz radar transmitter is higher than 13.99 dBm and the magnitude of the reference spur relative to the carrier is -36.45 dBc. The phase noise is -81 dBc/Hz at 1 MHz offset frequency from the carrier.

• Journal of electromagnetic engineering and science
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• v.14 no.4
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• pp.393-398
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• 2014

A highly efficient dual-mode linear CMOS stacked-FET power amplifier (PA) is implemented for 3G UMTS and 4G LTE handset applications. High efficiency is achieved at a backed-off output power ($P_{out}$) below 12 dBm by employing an active-bypass amplifier, which consumes very low quiescent current and has high load-impedance. The output paths between high- and low-power modes of the PA are effectively isolated by using a bypass switch, thus no RF performance degradation occurs at high-power mode operation. The fabricated 900 MHz CMOS PA using a silicon-on-insulator (SOI) CMOS process operates with an idle current of 5.5 mA and shows power-added efficiency (PAE) of 20.5%/43.5% at $P_{out}$ = 12.4 / 28.2 dBm while maintaining an adjacent channel leakage ratio (ACLR) better than -39 dBc, using the 3GPP uplink W-CDMA signal. The PA also exhibits PAE of 35.1% and $ACLR_{E-UTRA}$ of -33 dBc at $P_{out}$ = 26.5 dBm, using the 20 MHz bandwidth 16-QAM LTE signal.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.27 no.12
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• pp.1069-1074
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• 2016

This paper presents a V-band two-stage power amplifier integrated circuit using TSMC 65 nm CMOS process. The simple input, output, and inter-stage matching networks based on passive components are integrated. By compensating for power gain characteristics using a pre-distortion technique, the linearity of the power amplifier was improved. The implemented two-stage power amplifier showed a power gain of 10.4 dB, a saturated output power of 9.7 dBm, and an efficiency of 20.8 % with a supply voltage of 1 V at the frequency band of 58.8 GHz.