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http://dx.doi.org/10.5515/KJKIEES.2016.27.12.1069

Design of Two-Stage Fully-Integrated CMOS Power Amplifier for V-Band Applications  

Kim, Hyunjun (School of Information and Communication Engineering, Sungkyunkwan University)
Cho, Sooho (Hanwha Systems Co., Ltd.)
Oh, Sungjae (School of Information and Communication Engineering, Sungkyunkwan University)
Lim, Wonseob (School of Information and Communication Engineering, Sungkyunkwan University)
Kim, Jihoon (Samsung Electronics Co., Ltd.)
Yang, Youngoo (School of Information and Communication Engineering, Sungkyunkwan University)
Publication Information
The Journal of Korean Institute of Electromagnetic Engineering and Science / v.27, no.12, 2016 , pp. 1069-1074 More about this Journal
Abstract
This paper presents a V-band two-stage power amplifier integrated circuit using TSMC 65 nm CMOS process. The simple input, output, and inter-stage matching networks based on passive components are integrated. By compensating for power gain characteristics using a pre-distortion technique, the linearity of the power amplifier was improved. The implemented two-stage power amplifier showed a power gain of 10.4 dB, a saturated output power of 9.7 dBm, and an efficiency of 20.8 % with a supply voltage of 1 V at the frequency band of 58.8 GHz.
Keywords
Power Amplifier Integrated Circuit; CMOS Power Amplifier; V-Band; Mm-Wave; Pre-Distortionl;
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