• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2010.06a
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• pp.9-9
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• 2010

In this paper, High Brightness LED driver IC using new current sensing circuit is proposed. This LED driver IC can provide a constant current with high current precision over a wide input voltage range. The proposed current-sensing circuit is composed of a cascode current sensor and a current comparator with only one reference voltage. This IC minimizes the voltage stress of the MOSFET from the maximum input voltage and has low power consumption and chip area by using simple-structured comparator and minimum bias current. The LED current ripple of the designed IC is in ${\pm}5%$ and a tolerance of the average LED current is lower than 2.43%. This shows much improved feature than the previous method. Also, protections for input voltage and operating temperature are designed to improve the reliability of the designed IC. Designed LED driver IC uses $1{\mu}m$ X-Fab. BiCMOS process parameters and electrical characteristics and functioning are verified by spectre(Cadence) simulation.

• Proceedings of the IEEK Conference
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• 2002.06b
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• pp.293-296
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• 2002

This paper proposes new driving methods for designing a driver independent of the current property of organic light emitting diodes (OLED) displays. The proposed methods are the Look-Up Table (LUT) and the Pulse Width Modulation (PWM). The LUT is used to handle the amount of the current for driving the OLED display panel and the PWM is applied to represent the gray scale on the OLED display panel. Segment and common drivers were implemented using delay circuits to prevent short-circuit current and a DC-DC converter was designed to supply the drivers with a power source. In particular, tile proposed methods are used for the manufacturing of 1.8" 128$\times$128 dot passive matrix OLED display panel. The designed circuit was fabricated using 0.6w, 2-poly, 3-metal, CMOS process and applied to the Personal Communication System (PCS) phone successfully.ully.

• Proceedings of the IEEK Conference
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• 2003.07b
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• pp.791-794
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• 2003

The increasing computational capability of processors is driving the need for high bandwidth links to communicate and store the information that is processed. Such links are often an important part of multi processor interconnection, processor-to-memory interfaces and Serial-network interfaces. This paper describes a 0.11-${\mu}{\textrm}{m}$ CMOS 4 Gbp s/pin 3-Level transceiver using RSL/(Rambus Signaling Logic) for high bandwidth. This system which uses a high-gain windowed integrating receiver with wide common-mode range which was designed in order to improve SNR when operating with the smaller input overdrive of 3-Level. For multi-gigabit/second application, the data rate is limited by Inter-Symbol Interference (ISI) caused by low pass effects of channel, process-limited on-chip clock frequency, and serial link distance. In order to detect the transmited 4Gbps/pin with 3-Level data sucessfully ,the receiver is designed using 3-stage sense amplifier. The proposed transceiver employes multi-level signaling (3-Level Pulse Amplitude Modulation) using clock multi phase, double data rate and Prbs patten generator. The transceiver shows data rate of 3.2 ~ 4.0 Gbps/pin with a 1GHz internal clock.

• Journal of the Korean Institute of Telematics and Electronics C
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• v.36C no.3
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• pp.35-46
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• 1999

A derotator VLSI which compensates for the frequency and phase errors of a received signal in digital communication systems was developed employing a CORDIC algorithm. The CORDIC circuit directly rotates the input signal according to the phase error information, thus is much simpler than the conventional derotator architecture which consists of a DDFS (Direct Digital Frequency Synthesizer) and a complex multiplier. Since a derotator needs only small phase error accumulation, a fast direction sequence generation method which exploits the linearity of the arctangent function in small angles is utilized in order to enhance the operating speed. The chip was designed and implemented using a $0.6\mu\textrm{m}$ triple metal CMOS process by the full custom layout method. The whole chip size is $6.8\textrm{mm}^2$ and the maximum operating frequency is 25 MHz.

• ETRI Journal
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• v.39 no.3
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• pp.326-335
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• 2017

In the uplink transmission of massive (or large-scale) multi-input multi-output (MIMO) systems, large dimensional signal detection and its hardware design are challenging issues owing to the high computational complexity. In this paper, we propose low-complexity hardware architectures of Richardson iterative method-based massive MIMO detectors. We present two types of massive MIMO detectors, directly mapped (type1) and reformulated (type2) Richardson iterative methods. In the proposed Richardson method (type2), the matrix-by-matrix multiplications are reformulated to matrix-vector multiplications, thus reducing the computational complexity from $O(U^2)$ to O(U). Both massive MIMO detectors are implemented using a 65 nm CMOS process and compared in terms of detection performance under different channel conditions (high-mobility and flat fading channels). The hardware implementation results confirm that the proposed type1 Richardson method-based detector demonstrates up to 50% power savings over the proposed type2 detector under a flat fading channel. The type2 detector indicates a 37% power savings compared to the type1 under a high-mobility channel.

• Journal of the Institute of Electronics and Information Engineers
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• v.53 no.9
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• pp.49-53
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• 2016

A new large-signal model including the voltage-dependent extrinsic gate capacitance for RF channel distribution effect is developed for a high resistivity(HR) silicon-on-insulator(SOI) RF accumulation-mode MOS varactor. The data of voltage-dependent parameters are extracted by using accurate S-parameter optimization, and empirical model equations are constructed by data fitting process. The RF accuracy of this new model is validated by observing excellent agreements between modeled and measured Y11-parameter data in the wide voltage range up to 20 GHz.

• JSTS:Journal of Semiconductor Technology and Science
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• v.15 no.2
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• pp.208-222
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• 2015

For the performance-efficient integration of IPs on an SoC utilizing heterochronous multi-clock domains, we propose a synchronization scheme that causes low latency overhead when data are crossing clock boundaries. The proposed synchronization scheme is composed of a clock predictor and a synchronizer. The clock predictor of a sender clock domain produces a predicted clock that is used in a receiver clock domain to detect possible synchronization failures in advance. When the possible synchronization failures are detected, a synchronizer at the receiver delays data-capture times to avoid the possible synchronization failures. From the simulation of the proposed scheme through SPICE modeling using a Chartered $0.18{\mu}m$ CMOS process, we verified the functionalities and timing behavior of the clock predictor and the synchronizer. The simulation results show that the clock predictor produces a predicted clock before a synchronization failure, and the synchronizer samples data correctly using the predicted clock.

• IEIE Transactions on Smart Processing and Computing
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• v.3 no.6
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• pp.404-409
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• 2014

This paper presents a Spread Spectrum Clock Generator (SSCG) based on Relaxation oscillator using Up/Down Counter. The current is controlled by a counter and the spread spectrum of the Relaxation Oscillator. A Relaxation Oscillator with temperature compensation using the BGR and ADC is presented. The current to determine the frequency of the Relaxation Oscillator can be controlled. The output frequency of the temperature can be compensated by adjusting the current according to the temperature using the code that is the output from the ADC and BGR. EMI Reduction of SSCG is 11 dB, and Spread down frequency is 150 kHz. The current consumption is $600{\mu}A$ from 5V and the operating frequency is from 2.3 MHz to 5.75 MHz. The rate of change of the output frequency with temperature was approximately ${\pm}1%$. The SSCG is fabricated in a 0.35um CMOS process with active area $250um{\times}440um$.

• JSTS:Journal of Semiconductor Technology and Science
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• v.16 no.6
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• pp.793-799
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• 2016

A multi-purpose sensor interface that provides dual-mode operation of fingerprint sensing and physiological signal detection is presented. The dual-mode sensing capability is achieved by utilizing inter-pixel shielding patterns as capacitive amplifier's input electrodes. A prototype readout circuit including a fingerprint panel for feasibility verification was fabricated in a $0.18{\mu}m$ CMOS process. A single-channel readout circuit was implemented and multiplexed to scan two-dimensional fingerprint pixels, where adaptive calibration capability against pixel-capacitance variations was also implemented. Feasibility of the proposed multi-purpose interface was experimentally verified keeping low-power consumption less than 1.9 mW under a 3.3 V supply.

• Proceedings of the Korea Electromagnetic Engineering Society Conference
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• 2003.11a
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• pp.234-238
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• 2003

In this work, we have designed a fully integrated 2.4GHz LC-tuned voltage-controlled oscillator (VCO) with multiple tuning inputs for a $0.25-{\mu}m$ standard CMOS Process. The design of voltage-controlled oscillator is based on an LC-resonator with a spiral inductor of octagonal type and pMOS-varactors. Only two metal layer have been used in the designed inductor. The frequency tuning is achieved by using parallel pMOS transistors as varactors and back-gate tuned pMOS transistors in an active region. Coarse tuning is achieved by using 3-bit pMOS-varactors and fine tuning is performed by using back-gate tuned pMOS transistors in the active region. When 3-bit digital and analog inputs are applied to the designed circuits, voltage-controlled oscillator shows the tuning feature of frequency range between 2.3 GHz and 2.64 GHz. At the power supply voltage of 2.5 V, phase noise is -128dBc/Hz at 3MHz offset from the carrier, Total power dissipation is 7.5 mW.