• Journal of electromagnetic engineering and science
• /
• v.3 no.1
• /
• pp.29-34
• /
• 2003

In this paper, we fabricated an 1.8 ㎓ differential VCO using a commercial 0.5 ${\mu}{\textrm}{m}$ SiGe BiCMOS process technology, The fabricated VCO consumes 16 ㎃ at 3 V supply voltage and has a 1.2 $\times$ 1.6 $mm^2$TEX>chip area. A phase noise measured at 100 KHz offset carrier is -110 ㏈c/Hz and a tuning range is 1795 MHz~1910 MHz when two varactor diodes are biased from 0 V to 3 V.

• Journal of the Institute of Electronics and Information Engineers
• /
• v.51 no.11
• /
• pp.107-113
• /
• 2014

A VCO (Voltage Controlled Oscillator) and a divide-by-4 high speed frequency divider are implemented using 65nm CMOS technology for 60GHz wireless communication system. The mm-wave VCO was designed by NMOS cross-coupled LC type using current source. The architecture of the divide-by-4 high speed frequency divider is differential ILFD (Injection Locking Frequency Divider) with varactor to control frequency range. The frequency divider also uses current sources to get good phase noise characteristics. The measured results show that the VCO has 64.36~67.68GHz tuning range and the frequency divider divides the VCO output by 4 exactly. The high output power of 5.47~5.97dBm from the frequency divider is measured. The phase noise of the VCO including the frequency divider are -77.17dBc/Hz at 1MHz and -110.83dBc/Hz at 10MHz offset frequency. The power consumption including VCO is 38.4mW with 1.2V supply voltage.

• Proceedings of the IEEK Conference
• /
• 2008.06a
• /
• pp.413-414
• /
• 2008

A 2.4 GHz low phase noise fully integrated LC voltage-controlled oscillator (VCO) in $0.18\;{\mu}m$ CMOS technology is presented in this paper. The VCO is optimized based on phase noise reduction. The design of the VCO uses differential varactors which are adopted for symmetry of the circuit, and consider AM-PM conversion due to a cross-coupled pair. The VCO is designed to draw 3 mA from 1.8 V supply voltage. Simulated phase noise is -137.3 dBc/Hz at 3 MHz offset. The tuning range is found to be 300 MHz range from 2.3 GHz to 2.6 GHz.

• The Journal of the Korea institute of electronic communication sciences
• /
• v.6 no.1
• /
• pp.7-12
• /
• 2011

This paper proposes a differential Colpitts-VCO circuit suitable for low phase noise oscillation at the sub-1V supply voltage. Oscillation with low phase noise at the sub-1V supply voltage is facilitated by employing inductors as the current sources of the proposed circuit. One of the two feedback capacitors of the single-ended Colpitts oscillator in the proposed circuit is replaced with the MOS varactor in order to further reduce the resonator loss. Post-layout simulation results using a $0.18{\mu}m$ RF CMOS technology show that the phase noises at the 1MHz offset frequency of the proposed circuit oscillating at the sub-1V supply voltages of 0.6 to 0.9 V are at least 7 dBc/Hz lower than those of the well-known cross-coupled differential VCO.

• Journal of the Institute of Electronics Engineers of Korea SD
• /
• v.49 no.8
• /
• pp.41-46
• /
• 2012

A quadrature voltage controlled oscillator(QVCO) for X-band is presented in this paper. The QVCO has fabricated in Charted $0.13{\mu}m$ CMOS process. The QVCO consists of two cross-coupled differential VCO and two differential buffers. The QVCO is controlled by 4 bit of capacitor bank and control voltage of varactor. To have a linear quality factor of varactors, voltage biases of varactors are difference. The QVCO generates frequency tuning range from 6.591 GHz to 8.012 GHz. The phase noise is -101.04 dBc/Hz at 1MHz Offset when output frequency is 7.150 GHz. The supply voltage is 1.5 V and core current 6.5-8.5 mA.

• 한국정보통신설비학회:학술대회논문집
• /
• 2006.08a
• /
• pp.179-182
• /
• 2006

This paper introduce a different-type voltage-controlled oscillator (VCO) for PLL frequency synthesizer, And also the architecture of a high speed low-power-consumption CMOS dual-modulus frequency divider is presented. It provides a new approach to high speed operation and low power consumption. The proposed circuits simulate in 0.35 um CMOS standard technology.

• Journal of electromagnetic engineering and science
• /
• v.17 no.2
• /
• pp.98-104
• /
• 2017

This work describes the development and comparison of two phase-locked loops (PLLs) based on a 65-nm CMOS technology. The PLLs incorporate two different topologies for the output voltage-controlled oscillator (VCO): LC cross-coupled and differential Colpitts. The measured locking ranges of the LC cross-coupled VCO-based phase-locked loop (PLL1) and the Colpitts VCO-based phase-locked loop (PLL2) are 119.84-122.61 GHz and 126.53-129.29 GHz, respectively. Th e output powers of PLL1 and PLL2 are -8.6 dBm and -10.5 dBm with DC power consumptions of 127.3 mW and 142.8 mW, respectively. Th e measured phase noise of PLL1 is -59.2 at 10 kHz offset and -104.5 at 10 MHz offset, and the phase noise of PLL2 is -60.9 dBc/Hz at 10 kHz offset and -104.4 dBc/Hz at 10 MHz offset. The chip sizes are $1,080{\mu}m{\times}760{\mu}m$ (PLL1) and $1,100{\mu}m{\times}800{\mu}m$ (PLL2), including the probing pads.

• JSTS:Journal of Semiconductor Technology and Science
• /
• v.4 no.2
• /
• pp.83-87
• /
• 2004

Phase noise performance and current consumption of Radio Frequency (RF) Voltage-Controlled Oscillator (VCO) are largely dependent on the Quality (Q) factor of inductor-capacitor (LC) tank. Because the Q-factor of LC tank is determined by on-chip spiral inductor, we designed, analyzed, and modeled on-chip differential inductor to enhance differential Q-factor, reduce current consumption and save silicon area. The simulated inductance is 3.3 nH and Q-factor is 15 at 2 GHz. Self-resonance frequency is as high as 13 GHz. To verify its use to RF applications, we designed 2 GHz differential LC VCO. The measurement result of phase noise is -112 dBc/Hz at an offset frequency of 100 kHz from a 2GHz carrier frequency. Tuning range is about 500 MHz (25%), and current consumption varies from 5mA to 8.4 mA using bias control technique. Implemented in $0.35-{\mu}m$ SiGe BiCMOS technology, the VCO occupies $400\;um{\times}800\;um$ of silicon area.

• ETRI Journal
• /
• v.29 no.4
• /
• pp.421-429
• /
• 2007

This paper presents a direct-conversion CMOS transceiver for fully digital DS-UWB systems. The transceiver includes all of the radio building blocks, such as a T/R switch, a low noise amplifier, an I/Q demodulator, a low pass filter, a variable gain amplifier as a receiver, the same receiver blocks as a transmitter including a phase-locked loop (PLL), and a voltage controlled oscillator (VCO). A single-ended-to-differential converter is implemented in the down-conversion mixer and a differential-to-single-ended converter is implemented in the driver amplifier stage. The chip is fabricated on a 9.0 $mm^2$ die using standard 0.18 ${\mu}m$ CMOS technology and a 64-pin MicroLead Frame package. Experimental results show the total current consumption is 143 mA including the PLL and VCO. The chip has a 3.5 dB receiver gain flatness at the 660 MHz bandwidth. These results indicate that the architecture and circuits are adaptable to the implementation of a wideband, low-power, and high-speed wireless personal area network.

• Proceedings of the IEEK Conference
• /
• 2003.07a
• /
• pp.270-273
• /
• 2003

The design, fabrication, and measured result of a 4.7 GHz differential VCO (Voltage Controlled Oscillator) for a 5.2 GHz WLAN (Wireless Local Area Network) applications is presented. The circuit is designed in a 0.35 mm technology employing three metal layers. The design is based on a fully integrated LC tank using spiral inductors. Measured tuning range is 10% of oscillation frequency with a control voltage from 0 to 3.0 V. Oscillation power of $\square$ 2.3 dBm at 4.63 GHz is measured with 21 mA DC current at 3V supply. The phase noise is $\square$ 104.17 dBc/Hz at 1 MHz offset.