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A 1.8 GHz SiGe HBT VCO using 0.5μm BiCMOS Process  

Lee, Ja-Yol (SiGe Device Teams, ETRI)
Lee, Sang-Heung (SiGe Device Teams, ETRI)
Kang, Jin-Young (SiGe Device Teams, ETRI)
Shim, Kyu-Hwan (SiGe Device Teams, ETRI)
Cho, Kyoung-Ik (SiGe Device Teams, ETRI)
Oh, Seung-Hyeub (Dept. of Electronics Enigeering, Chungnam National University)
Publication Information
Journal of electromagnetic engineering and science / v.3, no.1, 2003 , pp. 29-34 More about this Journal
Abstract
In this paper, we fabricated an 1.8 ㎓ differential VCO using a commercial 0.5 ${\mu}{\textrm}{m}$ SiGe BiCMOS process technology, The fabricated VCO consumes 16 ㎃ at 3 V supply voltage and has a 1.2 $\times$ 1.6 $mm^2$TEX>chip area. A phase noise measured at 100 KHz offset carrier is -110 ㏈c/Hz and a tuning range is 1795 MHz~1910 MHz when two varactor diodes are biased from 0 V to 3 V.
Keywords
SiGe; BiCMOS; VCO; Phase Noise; Flicker Noise;
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