• Title/Summary/Keyword: CM Function

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Correction of Fluctuation Pressure by Tube System (튜브시스템에서 변동풍압의 보정)

  • You, Ki-Pyo;Kim, Young-Moon
    • Journal of Korean Association for Spatial Structures
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    • v.2 no.1 s.3
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    • pp.67-73
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    • 2002
  • Measurement of fluctuating pressure by tube system is carefully designed due to the organ-pipe resonance. It is necessary to correct the pressure before analysis. The three method for correction the distortion fluctuation pressure short tube length and the frequency response functions and insert a restrictor in the tube to increase the damping. The first method is useful when the tube length is short. In second method, the distorted signal through the tubing transformed into the frequency domain, dividing by transfer function and inverse fourier transforming back into the time domain gives the required pressure signal. In this paper three types of tubing which have different length of 100cm, 150cm, 200cm were experimented the distorted signal and correct the distortion signal

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CM으로 효율적인 건설안전관리 체계구축 방안에 관한 연구

  • 김영수;안병수;강경식
    • Proceedings of the Safety Management and Science Conference
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    • 2002.05a
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    • pp.23-30
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    • 2002
  • 최근 우리나라의 건설산업은 Project의 규모가 대형화됨에 따라 기계화 시공 신공법 도입등 공정작업이 다양해지고 새로운 방법들이 많이 시도되고 있으며 건설산업도 기획, 설계, 발주, 시공, 유지관리라는 연속적 단계를 통하여 각 단계가 상호 유기적 연관성을 가지므로 건설현장의 근원적 안전성 확보를 위해서 건설 시설물의 Life cycle 전 단계를 걸쳐 안전관리 개념과 기법이 도입되어야 한다. 따라서 본 연구에서는 CM에 의한 단계로 안전성 확보에 주력하고 미국 CMAA의 단계별 기능별(phase, 6Function) 업무내용에서와 같이 Safety Management를 한다. 또한 CM제도 정착에 따른 초기단계를 규정하는 안전관리 법령 재정을 하여 단계적으로 자율적 안전 관리를 유도하여 재해예방을 하도록 해야한다.

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Effective Channel Mobility of AlGaN/GaN-on-Si Recessed-MOS-HFETs

  • Kim, Hyun-Seop;Heo, Seoweon;Cha, Ho-Young
    • JSTS:Journal of Semiconductor Technology and Science
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    • v.16 no.6
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    • pp.867-872
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    • 2016
  • We have investigated the channel mobility of AlGaN/GaN-on-Si recessed-metal-oxide-semiconductor-heterojunction field-effect transistors (recessed-MOS-HFET) with $SiO_2$ gate oxide. Both field-effect mobility and effective mobility for the recessed-MOS channel region were extracted as a function of the effective transverse electric field. The maximum field effect mobility was $380cm^2/V{\cdot}s$ near the threshold voltage. The effective channel mobility at the on-state bias condition was $115cm^2/V{\cdot}s$ at which the effective transverse electric field was 340 kV/cm. The influence of the recessed-MOS region on the overall channel mobility of AlGaN/GaN recessed-MOS-HFETs was also investigated.

SERS Analysis of CMC on Gold-Assembled Micelle

  • Jang, Nak-Han
    • Bulletin of the Korean Chemical Society
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    • v.25 no.9
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    • pp.1392-1396
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    • 2004
  • The micellization of dodecylpyridinum chloride (DPC) assembled on aqueous gold nanoparticles has been studied as a function of concentration using Surface-Enhanced Raman Scattering (SERS). At the low concentration, the strong SERS band of the benzene ring moiety was observed at 1025 $cm^{-1}$, and assigned to “trigonal ring breathing”. According to high concentration of DPC, a new strong band was also appeared at 1012 $cm^{-1}$, which was assigned to “totally symmetry ring breathing”. The difference of two spectra seems to ascribe to the geometry of polar head group, i.e., pyridinium cation. These geometry exist flat-down at low concentration, whereas standing-up or tilted geometry at high concentration. The critical micelle concentration (CMC) was first obtained from the ratio of intensities of the two bands related to the benzene ring moiety by vibrational spectroscopy, and was about 28 mM. After the CMC, the benzene ring moiety in the micelle state was more restricted than in monomer state because there is no more change of intensities at 1012 $cm^{-1}$. In addition, the size of gold-assembled micelle was estimated using light scattering and it was about 328.3 nm.

Influence of Plasma Discharge Power on the Electrical and Optical Properties of Aluminum Doped Zinc Oxide Thin Films

  • Moon, Yeon-Keon;Park, Jong-Wan
    • Korean Journal of Materials Research
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    • v.16 no.6
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    • pp.346-350
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    • 2006
  • Al-doped ZnO (AZO) thin films were grown on type of glass#1737 substrates by DC magnetron sputtering. The structural, electrical and optical properties of the films were investigated as a function of various plasma discharge power. The obtained films were polycrystalline with a hexagonal wurtzite structure and preferentially oriented in the (002) crystallographic direction. The lowest resistivity was $6.0{\times}10^{-4}{\Omega}cm$ with the carrier concentration of $2.69{\times}10^{20}cm^{-3}$ and Hall mobility of 20.43 $cm^2/Vs$. The average transmittance in the visible range was above 90%.

GaN Schottky Barrier Diode Employing a Trench Structure (트렌치 구조를 이용한 GaN 쇼트키 장벽 다이오드)

  • Choi, Young-Hwan;Ha, Min-Woo;Lee, Seung-Chul;Han, Min-Koo
    • Proceedings of the KIEE Conference
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    • 2005.07c
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    • pp.2004-2006
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    • 2005
  • 트렌치 애노드 컨택을 설계하여 순방향 전압강하를 감소시키는 GaN 쇼트키 장벽 다이오드를 제안하였다. 애노드 내부에 트렌치를 설계하여 제안된 소자의 표면 애노드 컨택은 메탈 일 함수(metal work function)가 높은 Pt와 형성되며, 트렌치 애노드 컨택은 메탈 일 함수가 낮은 Au와 형성된다. 제안된 소자의 전기적 특성을 검증하기 위하여 2차원 수치 해석 시뮬레이션을 수행하였고, AlGaN/GaN 혜테로 접합 구조 위에 제작 및 측정하였다. 제안된 소자는 복잡한 공정 추가 없이 제작되며 $100A/cm^2$에서의 순방향 전압 강하는 0.73V로 기존 소자의 1.25V보다 우수한 특성을 보였다. 제안된 소자의 온 저항은 $1.58m{\Omega}cm^2$로 기존 소자의 온 저항 $8.20m{\Omega}cm^2$ 보다 낮은 장점을 가진다.

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Properties of ITO thin films with film thickness at room temperature (막 두께 변화에 따라 실온 제작된 ITO 박막의 특성)

  • Kim, K.H.;Kim, H.W.;Keum, M.J.;Kim, H.K.
    • Proceedings of the KIEE Conference
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    • 2005.07c
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    • pp.1856-1858
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    • 2005
  • In this study, Indium Tin Oxide(ITO) thin films were prepared at $O_2$ gas 0.2 sccm, no heating to substrate and working pressure 1mTorr with varying deposition time. We estimated structural, optical, electrical characteristics of ITO thin films as function of ITO thin films thickness. As a result, XRD peaks increased with increasing the thickness. The ITO thin film was fabricated with resistivity $4.23{\times}10^{-4}[{\Omega}{\cdot}cm]$, carrier mobility $52.9[cm^2/V{\cdot}sec]$, carrier concentration $2.79{\times}10^{20}[cm^{-3}]$. And we also observed that the SEM images of ITO thin films surface.

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Preparation of ITO thin films by FTS(Facing Targets Sputtering) method (FTS법을 이용한 ITO박막의 제작)

  • Kim, G.H.;Keum, M.J.;Kim, H.K.;Son, S.H.;Jang, K.W.;Lee, W.J.;Kim, K.H.
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2004.07a
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    • pp.203-206
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    • 2004
  • In this study the ITO thin films were prepared by using FTS(Facing Targets Sputtering) system. The electric characteristics, transmittance, surface roughness of ITO thin films were investigated as a function of varying input current and working gas pressure at room temperature. As a result, the ITO thin film was fabricated with resistivity $6{\times}10^{-4}[\Omega{\cdot}cm]$, carrier mobility $52.11[cm^2/V{\cdot}sec]$, carrier concentration $1.72{\times}10^{20}[cm^{-3}]$ of ITO thin film at working pressure 1mTorr and input current 0.6A.

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Molecular Dynamics Simulation Studies of Zeolite A. VIII. Structure and Dynamics of Na+ ions in a Non-Rigid Dehydrated Zeolite-A Framework

  • 이송희;최상구
    • Bulletin of the Korean Chemical Society
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    • v.20 no.5
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    • pp.587-591
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    • 1999
  • A molecular dynamics simulation study on the structure and dynamics of Na+ ions in non-rigid dehydrated Na12-A zeolite framework at 298.15 K was conducted using the same method reported in previous studies on rigid and non-rigid Na12-A zeolite frameworks. The agreement between the experimental and calculated results for the zeolite-A framework atoms of structural parameters for non-rigid dehydrated Na12-A zeolite is generally quite good, and for the adsorbed Na+ions the agreement is acceptable. The calculated bond lengths are generally in good agreement with the experimental results and other theoretical data. The calculated IR spectrum by Fourier transform of the total dipole moment autocorrelation function shows two major peaks around 2700 cm-1 and 7000 cm-1. The former appeared in the calculated IR spectra of non-rigid zeolite-A framework only system and the latter remains unexplained except, perhaps, indicating a new formation of a vibrational mode of the framework due to the adsorption of Na+ ions. The peaks above 6200-6800 cm-1 in non-rigid dehydrated Nal2-A zeolite are much larger than those in non-rigid dehydrated H12-A zeolite.

SHARED VALUES AND BOREL EXCEPTIONAL VALUES FOR HIGH ORDER DIFFERENCE OPERATORS

  • Liao, Liangwen;Zhang, Jie
    • Bulletin of the Korean Mathematical Society
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    • v.53 no.1
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    • pp.49-60
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    • 2016
  • In this paper, we investigate the high order difference counterpart of $Br{\ddot{u}}ck^{\prime}s$ conjecture, and we prove one result that for a transcendental entire function f of finite order, which has a Borel exceptional function a whose order is less than one, if ${\Delta}^nf$ and f share one small function d other than a CM, then f must be form of $f(z)=a+ce^{{\beta}z}$, where c and ${\beta}$ are two nonzero constants such that $\frac{d-{\Delta}^na}{d-a}=(e^{\beta}-1)^n$. This result extends Chen's result from the case of ${\sigma}(d)$ < 1 to the general case of ${\sigma}(d)$ < ${\sigma}(f)$.