• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• 제27권5호
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• pp.445-453
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• 2016

This paper presents the implementation and design of the 1T-1R wireless HD video streaming systems over 28 GHz mmWave frequency using 3GPP LTE-TDD standard on NI USRP RIO SDR platform. The baseband of the system uses USRP RIO that are stored in Xilinx Kintex-7 chip to implement LTE-TDD transceiver modem, the signal that are transceived from USRP RIO up or down converts to 28 GHz by using self-designed 28 GHz RF transceiver modules and it is finally communicated HD video data through self-designed $4{\times}8$ sub array antennas. It is that communication method between USRP RIO and Host PC use PCI express ${\times}4$ to minimize delay of data to transmit and receive. The implemented system show high error vector magnitude performance above 25.85 dBc and to transceive HD video in experiment environment anywhere.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• 제21권10호
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• pp.1169-1176
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• 2010

The RF front-end for L1/L2 dual-band Global Positioning System(GPS) receiver is presented in this paper. The RF front-end(down-converter) using low IF architecture consists of a wideband low noise amplifier(LNA), a current mode logic(CML) frequency divider and a I/Q down-conversion mixer with a poly-phase filter for image rejection. The current bleeding technique is used in the LNA and mixer to obtain the high gain and solve the head-room problem. The common drain feedback is adopted for low noise amplifier to achieve the wideband input matching without inductors. The fabricated RF front-end using $0.18{\mu}m$ CMOS process shows a gain of 38 dB for L1 and 41 dB for L2 band. The measured IIP3 is -29 dBm in L1 band and -33 dBm in L2 band, The input return loss is less than -10 dB from 50 MHz to 3 GHz. The measured noise figure(NF) is 3.81 dB for L1 band and 3.71 dB for L2 band. The image rejection ratio is 36.5 dB. The chip size of RF front end is $1.2{\times}1.35mm^2$.

• Transactions of the Korean Society of Mechanical Engineers A
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• 제34권2호
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• pp.245-253
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• 2010

The reliability problems of flip chip packages subjected to temperature change during the packaging process mainly occur due to mismatches in the coefficients of thermal expansion as well as features with time-dependent material properties. Resin molding compounds like glass fiber reinforced epoxy composites used as the dielectric layer in printed circuit boards (PCB) strongly exhibit viscoelastic behavior, which causes their Young's moduli to not only be temperature-dependent but also time-dependent. In this study, the stress relaxation and creep tests were used to characterize the viscoelastic properties of the glass fiber reinforced epoxy composite. Using the viscoelastic properties, finite element analysis (FEA) was employed to simulate thermal loading in the pre-baking process and predict thermal warpage. Furthermore, the effect of viscoelastic features for the major polymeric material on the dielectric layer in the PCB (the glass fiber reinforced epoxy composite) was investigated using FEA.

• Asia-Pacific Journal of Business Venturing and Entrepreneurship
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• 제7권3호
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• pp.17-25
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• 2012

Wire bonding process in making semiconductor needs the most precise control and Critical To Quality(CTQ). Thus, it is regarded to be the most essential step in packaging process. In this process, pure gold wire is used to connect the chip and PCB(substrate or lead frame). However, the price of gold has been skyrocketing continuously for a long period of time and is expected to further increase in the near future. This phenomenon situates us in an unfavorable condition amidst the competitive environment. To avoid this situation, many semiconductor material making companies developed new types of wires: Au.Ag wire is one material followed by many others. This study is aimed to optimize the parameter in wire bonding with the use of 6sigma and QFD(Quality Function Deployment). 6sigma process is a good means to not only solve the problem, but to increase productivity. In order to find the key factor, we focused on VOB(Voice of Business) and VOC(Voice of Customer). The main factors from VOB, VOC are called CTQ. However, there were times when these main factors were far from offering us the correct answer, thus making the situation more difficult to handle. This study shows that QFD aids in deciding which of the accurate factors to undertake. Normally QFD is used in designing and developing products. 6sigma process is held more effective when it used with QFD.

• Proceedings of the Korean Society of Applied Pharmacology
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• 한국응용약물학회 2003년도 Annual Meeting of KSAP : International Symposium on Pharmaceutical and Biomedical Sciences on Obesity
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• pp.98-98
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• 2003

${\beta}$-(1,3)-D-Glucans have been known to exhibit antitumor and antimicrobial activities. The presence of dectin-1,${\alpha}$, ${\beta}$-glucan receptor of dendritic cell, on macrophage has been controvertial. RT-PCR analysis led to the detection of dectin-1${\alpha}$ and ${\beta}$ in murine macrophage Raw264.7 cell line. Among the various organs of mouse, dectin-1${\alpha}$ and ${\beta}$ were detected in the thymus, lung, spleen, stomach and intestine. To analyze gene expression modulated by ${\beta}$-glucan treated murine Raw264.7 macrophage, total mRNA was applied to cDNA microarray to interrogate the expression of 7,000 known genes. cDNA chip analysis showed that ${\beta}$-glucan of P. osteatus increased gene expressions of immunomodulating genes, membrane antigenic proteins, chemokine ligands, complements, cytokines, various kinases, lectin associated genes and oncogenes in Raw 264.7 cell line. When treated with ${\beta}$-glucan of P. osteatus and LPS, induction of gene expression of TNF-${\alpha}$ and IFN-R1 was confirmed by RT-PCR analysis. Induction of TNF-R type II expression was confirmed by FACS analysis. IL-6 expression was abolished by EDTA in ${\beta}$-glucan and LPS treated Raw264.7 cell line, indicating that ${\beta}$-glucan binds to dectin-l in a Ca$\^$＋＋/ -dependent manner. To increase antitumor efficacy of ${\beta}$-glucan, ginsenoside Rh2 (GRh2) was co-treated with ${\beta}$-glucan in vivo and in vitro tests. IC$\sub$50/ values of GRh2 were 20 and 25 $\mu\textrm{g}$/$m\ell$ in SNU-1 and B16 melanoma F10 cell line, respectively. Co-treatment with ${\beta}$-glucan and GRh2 showed synergistic antitumor activity with cisplatin and mitomycin C both in vitro and in vivo. Single or co-treatment with ${\beta}$-glucan and GRh2 increased tumor bearing mouse life span. Co-treatment with ${\beta}$-glucan and GRh2 showed more increased life span with mitomycin C than that with cisplatin. Antitumor activities were 67% and 72 % by co-injection with ${\beta}$-glucan and GRh2 in the absence or presence of mitomycin C, respectively.

• Journal of Life Science
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• 제19권10호
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• pp.1495-1498
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• 2009

Type 2-diabetes is a typical polygenic disease complex, for which several common risk alleles have been identified. Adiponectin, which modulates insulin resistance as well as glucose and lipid metabolism, has recently been associated with type 2-diabetes (T2DM). Therefore, we investigated the genotype for the T45G and G267T polymorphisms in adiponectin genes in the Korean population and compared genotypes of patients with those of a control group. 100 patients (63 male, 37 female), who previously underwent T2DM and 100 controls (36 male, 63 female) participated in this study. There was a strong association between T45G polymorphism in the adiponectin gene and T2DM. The present study shows that adiponectin T45G polymorphism may be associated with the pathogenesis of T2DM. Further studies with a larger population may be needed for the development of diagnostic methods at genetic levels such as DNA chip.

• Journal of the Institute of Electronics and Information Engineers
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• 제50권6호
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• pp.105-113
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• 2013

In this paper a micro solar energy harvesting system with MPPT(Maximum Power Point Tracking) control using a miniature PV(photovoltaic) cell of which the output is less than 0.5V is proposed. The MPPT control is implemented using linear relationship between the open-circuit voltage of a PV cell and its MPP(Maximum Power Point) voltage such that a pilot PV cell can track the MPP of the main PV cell in real time. The proposed circuit is designed in 0.18um CMOS process. The designed chip area is $900um{\times}1370um$ including a load charge pump and pads. Measured results show that the designed system can track the MPP voltage changes with variations of light intensity. The designed circuit with MPPT control delivers MPP voltages to load even though the load is heavy such that it can supply more power when the MPPT control is applied. The proposed circuit does not require any precharged battery resulting in more suitability for miniaturized self-powered systems compared to the existing works.

• Journal of the Institute of Electronics and Information Engineers
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• 제54권5호
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• pp.17-23
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• 2017

Optical current sensors are suitable for operation in high voltage and high current environments such as power plants due to they are not affected by electromagnetic interference and have excellent insulation characteristics. However, as they operate in a harsh environment such as large temperature fluctuation and mechanical vibration, high reliability of the sensor is required. Therefore, many groups have been working on enhancing the reliability. In this work, an integrated optical current sensor incorporating polarization-rotated reflection interferometer is proposed. By integrating various optical components on a single chip, the sensor exhibits enhanced stability as well as the solution for low-cost optical sensors. Using this, we performed the characterization for the actual field application. By using a large power source, the current of 0.3 kA~36 kA was applied to the photosensor and the linear operation characteristics were observed. The error of the sensor was within $0{\pm}.5%$. Even when operating for a long time, the error range of the sensor was kept within $0{\pm}.5%$. In addition, the measurement of the frequency response over the range of 60 Hz to 10 kHz has confirmed that the 3-dB frequency band of the proposed OCT is well over 10 kHz.

• Journal of the Institute of Electronics and Information Engineers
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• 제54권5호
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• pp.24-32
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• 2017

In this paper, a low power 4th order delta-sigma modulator was designed with a high resolution of 12 bits or more for the biological signal processing. Using time-interleaving technique, 4th order delta-sigma modulator was designed with one operational amplifier. So power consumption can be reduced to 1/4 than a conventional structure. To operate stably in the big difference between the two capacitor for kT/C noise and chip size, the variable-stage amplifier was designed. In the first phase and second phase, the operational amplifier is operating in a 2-stage. In the third and fourth phase, the operational amplifier is operating in a 1-stage. This was significantly improved the stability of the modulator because the phase margin exists within 60~90deg. The proposed delta-sigma modulator is designed in a standard $0.18{\mu}m$ CMOS n-well 1 poly 6 Metal technology and dissipates the power of $354{\mu}W$ with supply voltage of 1.8V. The ENOB of 11.8bit and SNDR of 72.8dB at 250Hz input frequency and 256kHz sampling frequency. From measurement results FOM1 is calculated to 49.6pJ/step and FOM2 is calculated to 154.5dB.

• Journal of the Microelectronics and Packaging Society
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• 제13권1호통권38호
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• pp.23-29
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• 2006

Ultrasonic soldering of Si-wafer to FR-4 PCB at ambient temperature was investigated. The UBM of Si-substrate was Cu/ Ni/ Al from top to bottom with thickness of $0.4{\mu}m,\;0.4{\mu}m$, and $0.3{\mu}m$ respectively. The pad on FR-4 PCB comprised of Au/ Ni/ Cu from top to bottom with thickness of $0.05{\mu}m,\;5{\mu}m$, and $18{\mu}m$ respectively. Sn-3.5wt%Ag foil rolled to $100{\mu}m$ was used for solder. The ultrasonic soldering time was varied from 0.5 s to 3.0 s and the ultrasonic power was 1,400 W. The experimental results show that a reliable bond by ultrasonic soldering at ambient temperature was obtained. The shear strength increased with soldering time up to a maximum of 65 N at 2.5 s. The strength decreased to 34 N at 3.0 s because cracks were generated along the intermetallic compound between Si-wafer and Sn-3.5wt%Ag solder. The Intermetallic compound produced by ultrasonic soldering between the Si-wafer and the solder was $(Cu,Ni)_{6}Sn_{5}$.