A Study on the Silicon surface and near-surface contamination by $CHF_3$ /$C_2$ $F_6$ RIE and its removal with thermal treatment and $O_2$ plasma exposure
($CHF_3$ /$C_2$ $F_6$ 반응성이온 건식식각에 의한 실리콘 표면의 오염 및 제거에 관한 연구)
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- Journal of the Korean Institute of Telematics and Electronics A
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- v.30A no.1
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- pp.31-43
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- 1993