• Korean Journal of Materials Research
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• v.4 no.4
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• pp.483-490
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• 1994

The effect of vanadium additions on the thermal stability of Al-TI alloy \vas investigated. Al- 8wt.%Ti and Al-8wt.%(Ti+V) alloys wirh different Ti to V atomic ratios of 3 : 1 and 1 : 1 were pre- pared by mechanical alloying. The steady states wwe obtalncd after mechanical alloy~ng for ltihours for all the alloy compositions. The mechanically alloyed powders were consolidaicd by vacuum hot pressing and thermal st.ability was investigated by hardness testing afrcr aging thc specimens at $400^{\circ}C$, $480^{\circ}C$, $550^{\circ}C$ for up to 1000hrs. It was confirmed that addit~on of V- increased the thermal stability of Al-Ti alloy by reducing coarsening rate of $Ai_{3}Ti$ intermetallic compound.

• Biomedical Science Letters
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• v.6 no.3
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• pp.165-170
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• 2000

Vacuolar (H$^{+}$)-ATPase (V-ATPase) is an intracellular protein which consists of multiple subunits. It carries out acidification by pumping protons in the cell. This enzyme has also been found in the synaptic vesicles and may play an important role in the neurotransmission. We cloned cDNA fragments encoding the 16 kDa subunit of V-ATPase from the rat brain by RT-PCR and PCR using total RNA or recombinant phage DNA as templates. They contained the full coding sequences (468 bp) and one nucleotide at 3' region turned out to be different (A to C) when compared to the liver counterpart. However, this polymorphic difference did not cause any significant change in the primary structure of the protein because both GCA and GCC code for alanine. Our study would contribute to the understanding of the function of 16 M)a V-ATPase in the brain and of the mechanisms of neurotransmission.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.04b
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• pp.35-36
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• 2009

In this work, we demonstrate 800V 4H-SiC power DMOSFETs with several structural alterations to obtain a low threshold voltage ($V_{TH}$) and a high figure of merit ($V_B^2/R_{SP,ON}$). To optimize the device performance, we consider four design parameters; (a) the doping concentration ($N_{CSL}$) of current spreading layer (CSL) beneath the p-base region, (b) the thickness of p-base ($t_{BASE}$), (c) the doping concentration ($N_J$) and width ($W_J$) of a JFET region, (d) the doping concentration ($N_{EPI}$) and thickness ($t_{EPI}$) of epi-layer. These parameters are optimized using 2D numerical simulation and the 4H-SiC DMOSFET structure results in a threshold voltage ($V_{TH}$) below ~3.8V, and high figure of merit ($V_B^2/R_{SP,ON}$>${\sim}200MW/cm^2$) for a power MOSFET in $V_B$-800V range.

• YAKHAK HOEJI
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• v.36 no.5
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• pp.496-505
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• 1992

The correlation between GABA receptors($GABA_A$ and $GABA_B$ receptor) and benzodiazepine receptor on the saline infusion-induced micturition reflex contraction was studied in the female rat. To investigate the effect of ${\gamma}-aminobutyric$ acid(GABA) on the micturition reflex, exogenous GABA(10 mg/kg) and GABA transaminase inhibitor(aminooxyacetic acid; AOAA $1\;{\mu}g$) were administered intravenously(i.v.) and intracerebroventriculary(i.c.v.), respectively. In result, both GABA and AOAA inhibited the saline induced micturition reflex contraction. This AOAA induced inhibition of micturition reflex was blocked by both bicuculine. $GABA_A$ receptor antagonist, and Ro 15-1788, benzodiazepine receptor antagonist. Muscimol, $GABA_A$ receptor antagonist($0.1\;{\mu}g$ i.c.v., $3\;{\mu}g$ intrathecal; i.t., 1 mg/kg i.v.) and baclofen, $GABA_A$ receptor agonist($1\;{\mu}g$ i.c.v., $3\;{\mu}g$ i.t., 1 mg/kg i.v.) also inhibited the bladder contraction. Pretreatment of bicuculline($1\;{\mu}g$ i.c.v.), but not of 5-aminovaleric acid(AVA, $1\;{\mu}g$ i.c.v.), $GABA_B$ receptor antagonist blocked the central inhibition of muscimol. These inhibitory effects were reversed by Ro15-1788 but were potentiated by flurazepam, benzodiazepine receptor antagonist. On the other hand, the inhibitory effects of baclofen were not affected by Ro 15-1788. Diazepam and flurazepam also inhibited the micturition reflex contraction when they were administered $3\;{\mu}g$ i.c.v., $10\;{\mu}g$ i.t., $10\;{\mu}M$, $30\;{\mu}M$ transurethrally, respectively. In conclusion, these results suggest that the micturition reflex is mediated by $GABA_A$, $GABA_B$ receptor and benzodiazepine receptor. The bezodiazepines increase the receptor binding of GABA to the $GABA_A$ receptor, so that the benzodiiazepines show the synergistic effect on the inhibition of the micturition reflex contraction, but not to the $GABA_B$ receptor.

• Communications of the Korean Mathematical Society
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• v.15 no.1
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• pp.37-44
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• 2000

In this paper, for a given p-adic quasicharacter $c_{v}$ : $k_{v}$longrightarrow $Q_{p}$ satisfying a special condition, we will explicitly construct an admissible pairing corresponding to $c_{v}$. We define a p-adic height on the arbitrary abelian varieties associated to divisors and $c_{v}$ by using admissible pairings at every nonarchimedean places. We also show that our p-adic height satisfies similar properties of Neron-Tate's canonical p-adic height.t.ght.t.t.

• 한국정보디스플레이학회:학술대회논문집
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• 2008.10a
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• pp.645-647
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• 2008

In this paper, we analyzed interface trap density between pentacene and PVP and SiO2 gate dielectric by using high-low C-V characteristics. The interface trap density was $10^{13}\;cm^{-2}eV^{-1}$.

• Proceedings of the KIEE Conference
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• 2001.07a
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• pp.431-433
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• 2001

현재 우리 나라는 대용량 전력공급의 필요에 의해 765kV 초고압 송전망과 변전설비를 증설하고 있다. 앞으로 765kV 변전소는 우리 나라 전력계통의 중추적 역할을 담당하게 될 것이다. 하지만, 아직까지도 이에 대한 교육은 미진한 상태이다. 따라서 이러한 765kV 변전설비에 대한 전반적인 내용을 교육하기 위하여, 플래시와 자바를 이용한 교육용 OJT 문서를 인터넷상에서 상세하고 보다 편리하게 학습할 수 있도록 개발 하고자 한다. 웹 기반의 765kV 변전설비에 대한 교육용 OJT는 학습자가 능동적으로 대처할 수 있도록 구성되어 진다. 또한 앞으로 점차 증가하게 될 765kV 변전소에 관한 내용을 다루어 봄으로써, 765kV 변전설비에 대한 개괄적인 내용도 알 수 있고, 앞으로의 변전설비 추이에 관한 내용을 짐작할 수 있도록 한다.

• KIEE International Transactions on Electrophysics and Applications
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• v.4C no.3
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• pp.111-116
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• 2004

The Ni/SiC Schottky diode was fabricated with the $\alpha$-SiC thin film grown by the ICP-CVD method on a (111) Si wafer. $\alpha$-SiC film has been grown on a carbonized Si layer in which the Si surface was chemically converted to a very thin SiC layer achieved using an ICP-CVD method at $700^{\circ}C$. To reduce defects between the Si and $\alpha$-SiC, the surface of the Si wafer was slightly carbonized. The film characteristics of $\alpha$-SiC were investigated by employing TEM (Transmission Electron Microscopy) and FT-IR (Fourier Transform Infrared Spectroscopy). Sputterd Ni thin film was used as the anode metal. The boundary status of the Ni/SiC contact was investigated by AES (Auger Electron Spectroscopy) as a function of the annealing temperature. It is shown that the ohmic contact could be acquired beyond a 100$0^{\circ}C$ annealing temperature. The forward voltage drop at 100A/cm was I.0V. The breakdown voltage of the Ni/$\alpha$-SiC Schottky diode was 545 V, which is five times larger than the ideal breakdown voltage of the silicon device. As well, the dependence of barrier height on temperature was observed. The barrier height from C- V characteristics was higher than those from I-V.

• Journal of applied mathematics & informatics
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• v.42 no.3
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• pp.511-520
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• 2024

In this paper, we introduce the concept of split and non-split tree (D, C)- set of a connected graph G and its associated color variable, namely split tree (D, C) number and non-split tree (D, C) number of G. A subset S ⊆ V of vertices in G is said to be a split tree (D, C) set of G if S is a tree (D, C) set and ⟨V - S⟩ is disconnected. The minimum size of the split tree (D, C) set of G is the split tree (D, C) number of G, γ_χST (G) = min{|S| : S is a split tree (D, C) set}. A subset S ⊆ V of vertices of G is said to be a non-split tree (D, C) set of G if S is a tree (D, C) set and ⟨V - S⟩ is connected and non-split tree (D, C) number of G is γ_χST (G) = min{|S| : S is a non-split tree (D, C) set of G}. The split and non-split tree (D, C) number of some standard graphs and its compliments are identified.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.11a
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• pp.275-275
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• 2008

This paper describe the fabrication of a Pd/polycrystalline 3C-SiC schottky diode and its characteristics, in which the polycrystalline 3C-SiC layer and Pd Schottky contact were deposited by using APCVD and sputter, respectively. Crystalline quality, uniformity, and preferred orientations of the Pd thin film were evaluated by SEM and XRD, respectively. Pd/poly 3C-SiC Schottky diodes were fabricated and characterized by I-V and C-V measurements. Its electric current density Js and barrier height voltage were measured as $2\times10^{-3}$ A/$cm^2$ and 0.58 eV, respectively. These devices were operated until about $400^{\circ}C$. Therefore, from these results, Pd/poly 3C-SiC Schottky devices have very high potential for high temperature chemical sensor applications.