한국정보디스플레이학회:학술대회논문집
- 2008.10a
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- Pages.645-647
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- 2008
Analysis of Interface Trap Density between Semiconductor-Gate insulator with C-V characteristics
- Jeong, Seung-Hyeon (Dept. of Electronics engineering, Dong-A University) ;
- Kim, Se-Min (Dept. of Electronics engineering, Dong-A University) ;
- Song, Chung-Kun (Dept. of Electronics engineering, Dong-A University)
- Published : 2008.10.13
Abstract
In this paper, we analyzed interface trap density between pentacene and PVP and SiO2 gate dielectric by using high-low C-V characteristics. The interface trap density was