• Journal of the Institute of Electronics Engineers of Korea SD
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• v.39 no.10
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• pp.1-8
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• 2002

C- V method is a means to determine the effective channel length for miniaturized MOSFET's. This method achieves L$_{eff}$ by extracting a unique channel length independent extrinsic overlap length($\Delta$L) at a critical gate bias point. In this paper, we conducted an experiment on two different C-V methods. L$_{eff}$ extracted from experiment is compared with L$_{eff}$ simulated from a two-dimensional (2-D) device simulator, and the accuracy of C-V method for L$_{eff}$ extraction is analyzed.

• Journal of the Korean Institute of Telematics and Electronics T
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• v.35T no.1
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• pp.48-58
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• 1998

For the purpose of designing novel capacitance pressure sensor, several effects on sensitivity such as parasitic capacitance effects, temperature/thermal drift and leakage current have to be eleiminated. This paper proposed the experimental studies on frequency compensation method by electronic circuit technique, C-V converting method with switched capacitor and C-F converting method with schmitt trigger circuit. The third interface circuit by frequency compensation method is composed to eliminate the drift and leakage component by comparision sensing frequency with reference frequency. The signal transmission is realized by digital signal to minimize the influence of noise and high resolution is obtained by means of increasing the number of digital bits. In the fabricated high performance C-V interface, the offset voltage was not appeared, and in case of voltage source, 4.0V, feed back capacitance, 10㎊, the pressure, 0~10 ㎪, the sensitivity of C-V converter is 28 ㎷/㎪.V, the temperature drift characteristic, 0.051 %F.S./$^{\circ}C$ and C-F converter shows -6.6 Hz/pa, 0.078 %F.S./$^{\circ}C$ respectively, relatively good ones.

• The Transactions of The Korean Institute of Electrical Engineers
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• v.56 no.7
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• pp.1255-1260
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• 2007

[ $TiO_2-V_2O_5$ ] sol was prepared using sol-gel method. Sol changed to gel with hydrolysis and polymerization. DTA properties of gel powder had endothermic reaction due to evaporation of propanol about $80^{\circ}C$, had exothermic reaction due to combustion of propanol about $230^{\circ}C$ and had exothermic reaction due to combustion of alkyl group about $350^{\circ}C$. Crystalline properties of gel powder retained amorphous phase at $50^{\circ}C$, retained anatase phase from $400^{\circ}C\;to\;600^{\circ}C$ and had all rutile phase over $700^{\circ}C$ at 0.01mole $V_2O_5$ additive. The capacitance of thin films increased with increasing heat treatment temperature and thin films had best properties at $700^{\circ}C$. The capacitance of thin films increased a lot with decreasing measurement frequency.

• Journal of Sensor Science and Technology
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• v.9 no.3
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• pp.196-202
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• 2000

In this paper, we proposed the new bridge combination detection method for three dimensional piezoresistive silicon accelerometer, and the accelerometer with SOI structures was fabricated by bulk micromachining technology for using higher temperature than $200^{\circ}C$. The sensitivities of fabricated accelerometer for X, Y and Z-axis acceleration were about 8mV/V G, 8mV/V G and 40mV/V G. The nonlinearity of the output voltage was 1.6%FS and cross-axis sensitivity was within 4.6%. We confirmed that the three bridges detection method is very simple and the output characteristics of this accelerometer were similar to arithmetic circuit method accelerometer. The temperature characteristics of SOI structure accelerometer showed high operating temperature and good stability. And the temperature coefficient of offset voltage and sensitivity were $1033ppm^{\circ}C^{-1}$ and $1145ppm^{\circ}C$ respectively.

• The Transactions of the Korean Institute of Electrical Engineers C
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• v.51 no.11
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• pp.541-545
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• 2002

This paper proposes the new narrow erase method to erase wall charges formed in an AC plasma display panel (PDP) cell. In the proposed method, pulse timing of switch at the sustain period is adjusted for inducing, a weak discharge. Then, after the narrow erase, the voltage of the X electrode is set to differ from that of the Y electrode. For the proposed method, the measured maximum address voltage margin was 38.3V at Y_Rest voltage of 100V and sustain voltage of 180${\sim}$185V. However, for the conventional method, in which the X and Y electrodes are set to be of equal voltage after the narrow erase, the measured maximum address voltage margin was 31.3V at Y_Rest voltage of 150V and sustain voltage of 180V. This result shows that the measured maximum voltage margin for the proposed method is about 7V(22%) higher than that for the conventional method.

• Journal of KIISE
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• v.42 no.2
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• pp.213-219
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• 2015

Simulation is used these days to verify the hypothesis or the new technology. In particular, National Defense Modeling & Simulation (M&S) is used to predict wartime situation and conduct the military training. National Defense M&S can be divided into three parts, live simulation, virtual simulation, and constructive simulation. Live simulation is based on the real environment, which allows more realistic sumulation; however, it has decreased budget efficiency, but reduced depictions of reality. In contrast, virtual and constructive simulations which are based on the virtual environment, have increased budget efficiency, but reduced depictions of reality. Thus, if the three parts of the M&S are combined to make the L-V-C combined environment, the disadvantages of each simulation can be complemented to increases the quality of the simulation. In this paper, a method of interworking heterogeneous simulation middeware for L-V-C combined environment is proposed, and the test results of interworking between Data Distribution Service (DDS) and High Level Architecture (HLA) are shown.

• Journal of radiological science and technology
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• v.21 no.1
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• pp.59-64
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• 1998

[ $CaSO_4$ ] thermoluminescent phosphors was made by sintring the $CaSO_4$ after doping the transition elements Tm, Pd, Dy, V, Mo, Zr. The maximum Peaks are found in the measured $CaSO_4$(Tm, Pd, Dy, V, Mo, Zr) TL glow curve at $130^{\circ}C,\;110^{\circ}C,\;140^{\circ}C,\;100^{\circ}C$, and $120^{\circ}C$ when the heating rate is $5^{\circ}C/sec$. The activation energy of the main peak has been estimated by the peak shape method. The estimated activation energies are 1.02eV, 1.32eV, 1.12eV, 0.80eV, and 1.17eV, respectively. The thermoluminescence process in $CaSO_4$(Tm, Pd, Dy, V, Mo, Zr)are found to the 2nd order when the main peak of the glow curve is analyzed by peak shape method. The dose responses of $CaSO_4$(Tm, Pd, Dy, V, Mo, Zr) phosphors are linear within $4{\times}10^{-4}{\sim}1Gy$ of X-rays.

• Transactions on Electrical and Electronic Materials
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• v.3 no.2
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• pp.10-15
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• 2002

In this paper, the electrical characteristics of fabricated p+-n junction diode are demonstrated and interpreted with different theoretical calculations. Dopants distribution by boron ion implantation on silicon wafer were simulated with TRIM-code and ICECaEM simulator. In order to make electrical activation of implanted carriers, thermal annealing treatments are carried out by RTP method for 1min. at $1000^{circ}C$ under inert $N_2$ gas condition. In this case, profiles of dopants distribution before and after heat treatments in the substrate are observed from computer simulations. In the I-V characteristics of fabricated diodes, an analytical description method of a new triangular junction model is demonstrated and the results with calculated triangular junction are compared with measured data and theoretical calculated results of abrupt junction. Forward voltage drop with new triangular junction model is lower than the case of abrupt junction model. In the C-V characteristics of diode, the calculated data are compared with the measured data. Another I-V characteristics of diodes are measured after proton implantation in electrical isolation method instead of conventional etching method. From the measured data, the turn-on characteristics after proton implantation is more improved than before proton implantation. Also the C-V characteristics of diode are compared with the measured data before proton implantation. From the results of measured data, reasonable deviations are showed. But the C-V characteristics of diode after proton implantation are deviated greatly from the calculated data because of leakage currents in defect regions and layer shift of depletion by proton implantation.

• Journal of Sericultural and Entomological Science
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• v.25 no.1
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• pp.44-50
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• 1983

The study was carried out to suggest on opinion of the standardization of size deviation in the existing raw silk testing method. 1. The present grade A of size deviation stipulates 4.61 to 5.80 of standard deviation for 50 to 69 denier of mean value, however, the 5.80 standard deviation with the mean values of 50 and 69 denier belong to different distribution. 2. It is reasonable that the variation coefficients of grade 2A should be lower than that of grade A. However, the present testing method shows larger variation in grade 2A than in grade A. This is illustrated 9.00 for 69 denier in grade 2A and 8.41 for 70 denier in grade A. 3. The size deviation value compares the quality of raw silk with different mean value. Therefore, the standard deviation is recommended to be replaced by the C.V. value in determining the grade of silk. 4. The C.V. have a tendency to increase with lower grades below 6A for the size deviation below 33 denier with some inconsistencies. The figures should be adjusted so that the C.V. inconsistencies size deviation below 33 denier will be corrected. 5. The standard deviation increases with size under the same grade for the size deviations above 33 denier, however, the C.V. does not vary greatly with size deviation. 6. To rectify the above-mentioned inconsistencies the C.V. conversion and curvilinear regresion correction is recommended to improve the present silk testing method 7. The table of size deviation standard are as follows: Suggested standard of size deviation, unit: C.V. Value

• Proceedings of the KIEE Conference
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• 2007.11c
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• pp.138-140
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• 2007

$TiO_2-V_2O_5$ sol was fabricated using sol-gel method and $TiO_2-V_2O_5$ thin films were fabricated using dip-coating method. $V_2O_5$ sol was added 0.01mo1e, 0.03mo1e, 0.05mo1e into $TiO_2$ sol. Viscosity of sol increased fast from about 1,000 minutes and sol began gelation from about 10,000 minutes. As a results of crystalline properties, $V_2O_5$ peaks were not found despite of $V_2O_5$ addition. Endothermic reaction occurred due to evaporation of solvent and dissociation of OH at $80^{\circ}C$. Exothermic reaction occurred due to combustion and oxidation of solvent at $230^{\circ}C$, occurred to combustion and oxidation of alkyl group at $350^{\circ}C$. Thickness of thin films increased $0.1{\sim}0.25{\mu}m$ every a dipping.