• Journal of the Korean Institute of Telematics and Electronics A
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• v.30A no.12
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• pp.51-59
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• 1993

A 4${\times}10^{19}cm^{3}$ carbon-doped base AlGaAs/GaAs HBY was grown using carbontetracholoride(CCl$_4$) by atmospheric pressure MOCVD. Abruptness of emitter-base junction was characterized by SIMS(secondary ion mass spectorscopy) and the doping concentration of base layer was confirmed by DXRD(double crystal X-ray diffractometry). Mesa-type HBTs were fabricated using wet etching and lift-off technique. The base sheet resistance of R$_{sheet}$=550${\Omega}$/square was measured using TLM(transmission line model) method. The fabricated transistor achieved a collector-base junction breakdown voltage of BV$_{CBO}$=25V and a critical collector current density of J$_{O}$=40kA/cm$^2$ at V$_{CE}$=2V. The 50$\times$100$\mu$$^2$ emitter transistor showed a common emitter DC current gain of h$_{FE}$=30 at a collector current density of JS1CT=5kA/cm$^2$ and a base current ideality factor of ηS1EBT=1.4. The high frequency characterization of 5$\times$50$\mu$m$^2$ emitter transistor was carried out by on-wafer S-parameter measurement at 0.1~18.1GHz. Current gain cutoff frequency of f$_{T}$=27GHz and maximum oscillation frequency of f$_{max}$=16GHz were obtained from the measured Sparameter and device parameters of small-signal lumped-element equivalent network were extracted using Libra software. The fabricated HBT was proved to be useful to high speed and power spplications.

• The Transactions of The Korean Institute of Electrical Engineers
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• v.58 no.9
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• pp.1757-1763
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• 2009

The composites were fabricated by adding 0, 15, 20, 25[vol.%] Zirconium Diboride(hereafter, $ZrB_2$) powders as a second phase to Silicon Carbide(hereafter, SiC) matrix. The physical, mechanical and electrical properties of electroconductive SiC ceramic composites by Spark Plasma Sintering(hereafter, SPS) were examined. Reactions between ${\beta}-SiC$ and $ZrB_2$ were not observed in the XRD analysis. The relative density of mono SiC, SiC+15[vol.%]$ZrB_2$, SiC+20[vol.%]$ZrB_2$ and SiC+25[vol.%]$ZrB_2$ composites are 90.93[%], 74.62[%], 74.99[%] and 72.61[%], respectively. The XRD phase analysis of the electroconductive SiC ceramic composites reveals high of SiC and $ZrB_2$ and low of $ZrO_2$ phase. The lowest flexural strength, 108.79[MPa], shown in SiC+15[vol.%] $ZrB_2$ composite and the highest - 220.15[MPa] - in SiC+20[vol.%] $ZrB_2$composite at room temperature. The trend of the mechanical properties of the electroconductive SiC ceramic composites moves in accord with that of the relative density. The electrical resistivities of mono SiC, SiC+15[vol.%]$ZrB_2$, SiC+20[vol.%]$ZrB_2$ and SiC+25[vol.%]$ZrB_2$ composites are 4.57${\times}10^{-1}$, 2.13${\times}10^{-1}$, 1.53${\times}10^{-1}$ and 6.37${\times}10^{-2}$[${\Omega}$ cm] at room temperature, respectively. The electrical resistivity of mono SiC, SiC+15[vol.%]$ZrB_2$. SiC+20[vol.%]$ZrB_2$ and SiC+25[vol.%]$ZrB_2$ are Negative Temperature Coefficient Resistance(hereafter, NTCR) in temperature ranges from 25[$^{\circ}C$] to 100[$^{\circ}C$]. The declination of V-I characteristics of SiC+20[vol.%]$ZrB_2$ composite is 3.72${\times}10^{-1}$. It is convinced that SiC+20[vol.%]$ZrB_2$ composite by SPS can be applied for heater or electrode above 1000[$^{\circ}C$]

• Journal of Radiation Protection and Research
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• v.37 no.2
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• pp.70-74
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• 2012

Silicon carbide (SiC) is a promising material for neutron detection at harsh environments because of its capability to withstand strong radiation fields and high temperatures. Two PIN-type SiC semiconductor neutron detectors, which can be used for nuclear power plant (NPP) applications, such as in-core reactor neutron flux monitoring and measurement, were designed and fabricated. As a preliminary test, MCNPX simulations were performed to estimate reaction probabilities with respect to neutron energies. In the experiment, I-V curves were measured to confirm the diode characteristic of the detectors, and pulse height spectra were measured for neutron responses by using a $^{252}Cf$ neutron source at KRISS (Korea Research Institute of Standards and Science), and a Tandem accelerator at KIGAM (Korea Institute of Geoscience and Mineral Resources). The neutron counts of the detector were linearly increased as the incident neutron flux got larger.

• Proceedings of the Korean Vacuum Society Conference
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• 2010.02a
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• pp.342-342
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• 2010

We have investigated an Au intercalated monolayer graphene on Ni(111) using angle-resolved photoemission spectroscopy (ARPES), high resolution photoemission spectroscopy (HRPES), and low energy electron diffraction (LEED) at the 3A2 ARUPS beamline in Pohang Accelerator Laboratory. We find the monolayer graphene is well grown on the Ni(111) surface by the adsorption of acetylene. However, the graphene does not show the characteristic $\pi$ band near the Fermi level due to its strong interaction with the underlying substrate. When Au is adsorbed on the surface and then annealed at high temperature, we observe that Au is intercalated underneath the monolayer graphene. The process of the Au intercalation was monitored by HRPES of corresponding Au 4f and C 1s core levels as well as the electronic structure of the $\sigma$, $\pi$ states at $\Gamma$, K points. The $\sigma$, $\pi$ bands of graphene shift towards the Fermi level and the $\pi$ band is clearly observed at K point after the intercalation of full monolayer Au. The full width at half maximum (FWHM) of the C 1s peak narrows to approximately 0.42 eV after intercalation. These results imply that the interaction between the graphene and substrate is considerably weakened after the Au intercalation. We will discuss the graphene is really closer to ideal free standing graphene suggested recently.

• KSCE Journal of Civil and Environmental Engineering Research
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• v.29 no.3D
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• pp.335-345
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• 2009

Generally, density is used as a measure of effectiveness (MOE) of the level of service (LOS) for the basic segment of the roadway facility, but can not express the operational condition of the roadway facility properly because there can be an error in the computed density compared with the density measured in the field. Thus, the purpose of this study is to investigate the real-time traffic characteristic data (traffic flow, speed, occupancy, headway, spacing, etc.) from the detectors installed on the mainline section of urban freeway under the study, analyze the maximum flow rate from the relationship between the real-time traffic characteristics collected, and evaluate the LOS criteria within the basic segment of the urban freeway based on the relationship between the occupancy and the v/c ratio depending on the level of service.

• Proceedings of the KOSOMBE Conference
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• v.1992 no.05
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• pp.203-208
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• 1992

In order to restore the gait function by functional electrical stimulation(FES) in hemiplegic patients, an electrical stimulator and foot sensor were developed on the basis of optimal parameters which resulted from animal experiments. Physical properties of the soleus muscle were quite different from those of themedial gastrocnemius muscle, that is, the former had a characteristic or slow muscle and the letter had a characteristic of fast muscle in rats. Optimal parameters for electrical stimulation were 0.2ms of pulse width and 20Hz of frequency in the soleus muscle and 0.3ms, 40Hz in the medial gastrocnemius muscle. Amplitude modulated electrical stimulator with -15V of maximal output was made and automatic on-off time if the stimulator was 5 seconds. The foot sensor composed of 3 sensors in 3 pressure points of the foot was made in order to control the gai t function by closed loop feedback system. The gait function was improved by using the stimulator and foot sensor in peroneal palsy. These results suggest that the electrical stimulator with closed loop feedback system may restore the gait function in hemiplegic patients.

• Journal of Microbiology
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• v.45 no.3
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• pp.193-198
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• 2007

A marine bacterium was isolated from Mai Po Nature Reserve of Hong Kong and identified as Vibrio cholerae MP-1. It contains a small plasmid designated as pVC of 3.8 kb. Four open reading frames (ORFs) are identified on the plasmid, but none of them shows homology to any known protein. Database search indicated that a 440 bp fragment is 96% identical to a fragment found in a small plasmid of another V. cholerae. Further experiments demonstrated that a 2.3 kb EcoRI fragment containing the complete ORF1, partial ORF4 and their intergenic region could self-replicate. Additional analyses revealed that sequence upstream of ORF1 showed the features characteristic of theta type replicons. Protein encoded by ORF1 has two characteristic motifs existed in most replication initiator proteins (Rep): the leucine zipper (LZ) motif located at the N-terminal region and the alpha helix-turn-alpha helix motif (HTH) located at the C-terminal end. The results suggest that pVC replicates via the theta type mechanism and is likely a novel type of theta replicon.

• Restorative Dentistry and Endodontics
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• v.12 no.1
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• pp.39-49
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• 1986

The purpose of this study was to observe characteristic properties through the polarization curves and SEM images from 4 different types of amalgam obtained by using the potentiostats (Princeton EG & G) & SEM (Jeol/35), and to investigate the degree of corrosion on the oxidation peak of the each phase of amalgam. After each amalgam alloy and Hg was triturated as the direction of the manufacturer by means of the mechanical amalgamator (Shofu Co.), the triturated mass was inserted into the cylindrical metal mold which was 12mm in diameter and 10.0mm in height and was condensed by using routine manner. The specimen was removed from the mold and stored at room temperature for about 24 hours. The standard surface preparation was routinely carried out. Anodic polarization measurement was employed to confirm the corrosion behaviour of the amalgams in a 0.9% saline solution (P.H: 6.8-7.0) at $37^{\circ}C$. The initial rest potential (corrosion potential) was determined after 30 minutes of immersion of specimen in electrolyte, and the potential scan was begun at the point of 100mV cathodic from the corrosion potential. The scan rate was 0.17mV/sec. in the study to observe the degree of corrosion of each phase. SEI and EPMA images on the determined oxidation peaks of each amalgam were observed. The results were as follows: 1. In the four anodic polarization curves, low copper amalgams have three oxidation peaks and high copper amalgams have two oxidation peaks, -270mV, +26mV and +179mV(SEC) in the low copper lathe cut, and -300mV, +39mV and +163mV(SEC) in the low copper spherical. -4mV and +154mV(SEC) in the Dispersalloy, and +17mV and +180mV(SEC) in the Tytin as high copper amalgams. 2. ${\gamma}_2$ phase in the low copper amalgam and ${\eta}$ phase in the high copper amalgam were the most corrodible phases and Ag-Cu eutectic in high copper amalgam was the most slowly corroded phase. 3. Low copper amalgam was more susceptible in corrosion than high copper amalgam.

• JSTS:Journal of Semiconductor Technology and Science
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• v.17 no.2
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• pp.283-287
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• 2017

Recently, Ni-InGaAs has been required for high-performance III-V MOSFETs as a promising self-aligned material for doped source/drain region. As downscaling of device proceeds, reduction of contact resistance ($R_c$) between Ni-InGaAs and n-InGaAs has become a challenge for higher performance of MOSFETs. In this paper, we compared three types of sample, vacuum, 2% $H_2$ and 4% $H_2$ annealing condition in rapid thermal annealing (RTA) step, to verify the reduction of $R_c$ at Ni-InGaAs/n-InGaAs interface. Current-voltage (I-V) characteristic of metal-semiconductor contact indicated the lowest $R_c$ in 4% $H_2$ sample, that is, higher current for 4% $H_2$ sample than other samples. The result of this work could be useful for performance improvement of InGaAs n-MOSFETs.

• Journal of Energy Engineering
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• v.23 no.4
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• pp.88-94
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• 2014

In this paper, Thermal Shock tests were performed varying the composition of the solder and ribbon thickness (A-type:0.2mm/60Sn40Pb, B-type:0.25mm/60Sn40Pb, C-type:0.2 /62Sn36Ag2Pb, D-type:0.25mm/62Sn36Ag2Pb) for evaluating the long-term reliability about Ribbon junction of Silicon solar cells. Thermal Shock test condition was performed during the 600cycles having $-40^{\circ}C{\sim}85^{\circ}C$ temperature range each 15 minutes; One cycle time was 30min. As a result, the initial efficiency of the A-type, B-type, and C, D-type were showed 15.0%, 15.4% and 15.8% respectively. After thermal shock test, the efficiency decreasing-rate of each type were as follow that A-type was 13.8%, B-Type was 15.4%. C-Type and D-Type was 15.3% and 16.2%, respectively. Also, degradation of surface changes and I-V characteristic curves were showed that the series resistance of the A, C-type was increased. Also, current lowering starting point of C-type shown 0.05volt[v] earlier than that of A-type. And B, D-type shown characteristics of composite lowering efficiency such as increase of series resistance, decrease of parallel resistance and cell damage. Therefore Initial solderability and efficiency of specimens using the solder with SnAgPb were superior. But, It has inferior the long-term reliability. The test was confirmed that as the ribbon thickness increases, long-term reliability of solar cell will decrease.