JSTS:Journal of Semiconductor Technology and Science

  • 제17권2호
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  • Pages.283-287
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  • 2017
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  • 1598-1657(pISSN)
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  • 2233-4866(eISSN)
대한전자공학회 (The Institute of Electronics and Information Engineers)
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Contact Resistance Reduction between Ni-InGaAs and n-InGaAs via Rapid Thermal Annealing in Hydrogen Atmosphere

  • Lee, Jeongchan (Division of Electronics, Radio Science & Engineering, and Information Communications Engineering, Chungnam National University) ;
  • Li, Meng (Division of Electronics, Radio Science & Engineering, and Information Communications Engineering, Chungnam National University) ;
  • Kim, Jeyoung (Division of Electronics, Radio Science & Engineering, and Information Communications Engineering, Chungnam National University) ;
  • Shin, Geonho (Division of Electronics, Radio Science & Engineering, and Information Communications Engineering, Chungnam National University) ;
  • Lee, Ga-won (Department of Electronics Engineering, Chungnam National University) ;
  • Oh, Jungwoo (School of Integrated Technology, Yonsei University) ;
  • Lee, Hi-Deok (Department of Electronics Engineering, Chungnam National University)
  • 투고 : 2016.08.25
  • 심사 : 2017.01.04
  • 발행 : 2017.04.30
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초록

Recently, Ni-InGaAs has been required for high-performance III-V MOSFETs as a promising self-aligned material for doped source/drain region. As downscaling of device proceeds, reduction of contact resistance ($R_c$) between Ni-InGaAs and n-InGaAs has become a challenge for higher performance of MOSFETs. In this paper, we compared three types of sample, vacuum, 2% $H_2$ and 4% $H_2$ annealing condition in rapid thermal annealing (RTA) step, to verify the reduction of $R_c$ at Ni-InGaAs/n-InGaAs interface. Current-voltage (I-V) characteristic of metal-semiconductor contact indicated the lowest $R_c$ in 4% $H_2$ sample, that is, higher current for 4% $H_2$ sample than other samples. The result of this work could be useful for performance improvement of InGaAs n-MOSFETs.

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참고문헌

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