• 대한전기학회논문지:전기물성ㆍ응용부문C
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• 제53권1호
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• pp.1-7
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• 2004

This paper describes the carbonization characteristics of a phenolic resin deteriorated by tracking under the environment of a fire. In the experiment, a liquids droplet of 1[％] NaCl was dripped on the phenolic resin to cause a tracking with 110[V], 220[V] voltages applied. It can be addressed from the experimental results that when an insulator is carbonized by an external fire, its structure is amorphous. If an insulator is carbonized by electrical cause, on the other hand, its structure would be crystalline. In order to observe the surface change of the phenolic resin, the tracking process was analyzed by using SEM. In the case that the materials are carbonized under heat or fire, the exothermic peak appears around 500[$^{\circ}C$]. This is one of the important factors to determine the cause of fires. As a result of DTA, the exothermic peaks of an untreated sample showed at 333.4[$^{\circ}C$], 495.7[$^{\circ}C$] but those of a sample deteriorated by tracking appeared at 430.6[$^{\circ}C$], 457.6[$^{\circ}C$] in a voltage of 110[V], and at 456.2[$^{\circ}C$], 619.7[$^{\circ}C$] in a voltage of 220[V]. It is possible, therefore, to distinguish a virgin sample from carbonized samples(graphite) by the exothermic peak.

• 한국재료학회지
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• 제12권6호
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• pp.464-469
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• 2002

$SrBi_2Nb_2O_9(SBN)$ thin films were grown on Pt/Ti/Si and p-type Si(100) substrates by rf-magnetron co-sputtering method using two ceramic targets, $SrNb_2O_6\; and \;Bi_2O_3$. The structural and electrical characteristics have been investigated to confirm the possibility of the SBN thin films for the applications to destructive and nondestructive read out ferroelectric random access memory(FRAM). For the optimum growth condition X-ray diffraction patterns showed that SBN films had well crystallized Bi-layered perovskite structure after $700^{\circ}C$ heat-treatment in furnace. From this specimen we got remnant polarization $(2P_r)$ of about 6 uC/$\textrm{cm}^2$ and coercive voltage $(V_c)$ of about 1.5 V at an applied voltage of 5 V. The leakage current density was $7.6{\times}10^{-7}$/A/$\textrm{cm}^2$ at an applied voltage of 5V. And for the NDRO-FRAM application, properties of SBN films on Si substrate has been investigated. From transmission electron microscopy (TEM) analysis, we found the furnace treated sample had a native oxide about 2 times thicker than the RTA treated sample and this thick native oxide layer had a bad effect on C-V characteristics of SBN/Si thin film. After $650^{\circ}C$ RTA process, we got the improved memory window of 1.3 V at an applied voltage of 5 V.

• 전기의세계
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• 제29권2호
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• pp.111-117
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• 1980

Contacts formed by vacuum evaporation of As-Te-Si-Ge chalcogenide glass onto Al metal (99.9999%) are studied by measuring paralle capacitance C(V), Cp(w), resistance R(V), Rp(w), and I-V characteristics. The fact that contact metal alloying produced high-resistance region is confirmed from the measurements of parallel capacitance and resistance. From the I-V characteristics in the pre-switcing region, it is found that electronic conduction and sitching occurs in the vicinity of metal-amorphous semiconductor interface. From the experimental obsevations, it is concuded that the current flow in the thin film is space-charge limited current (SCLC) due to the tunneling of electrons through the energy barriers.

• 대한전자공학회논문지SD
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• 제42권6호
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• pp.23-30
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• 2005

본 논문에서는 다양한 에미터 금속 재료를 이용하여 산화된 다공질 폴리실리콘(Oxidized Porous Poly-Silicon) 전계방출 소자를 제조하였으며 에미터 금속의 열처리 효과가 산화된 다공질 폴리실리콘 전계방출소자의 특성에 미치는 영향을 조사하였다. 다양한 에미터 금속 중 구동전극을 가진 Pt/Ti 에미터 전극을 $300^{\circ}C$-1hr 열처리한 경우 전자방출 효율은 $V_{ps}$=12 V에서 최대 $2.98\%$의 효율을 나타내었으며, $350^{\circ}C$-1hr 열처리한 경우 $V_{ps}$=16V에서 $3.37\%$의 가장 높은 효율을 나타내었다. 이는 열처리 공정을 통해 OPPS 전계방출 소자 표면에 다수의 결정립 경계와 무수히 많은 미세한 다공질 간의 흡착성의 개선으로 인한 면 저항 감소에 의한 것을 알 수 있다. OPPS 전계 방출 소자를 디스플레이소자로 적용하기 위해 형광체 발광 특성을 조사해 본 결과, $900^{\circ}C$-50min 산화 후 Pt/Ti(5nm/2nm) 에미터 전극을 사용하여 제조된 OPPS 전계 방출 소자의 경우 15 V에서 3600 cd/$m^2$, 20 V에서 6260 cd/$m^2$의 상대적으로 높은 휘도를 나타내었다. 열처리는 Ti층과 OPPS 간의 흡착성을 개선시키고 에미터 전극에 고른 전계를 가하는 중요한 역할을 한다.

• Current Photovoltaic Research
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• 제4권3호
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• pp.93-97
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• 2016

Light-emitting chromophores have been separated from silica spheres modified the surface with 3-(trimethoxysilyl)propylmethacrylate (TMSPM). The photoluminescence characteristics of the chromophores were investigated with various excitation wavelengths. The TMSPM was attached to the surface of silica spheres at $75^{\circ}C$. Large number of round shaped particles of the TMSPM was on the surface of silica spheres after 3 h reaction. The TMPSM was completely covered on the surface of the spheres after 6 h reaction. The surface modified silica spheres were soaked into acetone and stored for 20 days at ambient condition. The solution color slowly changed from light yellow to deep yellow with the increase of the storing time. The FTIR absorption peaks at 3348, 2869, 2927, 1715, 1453/1377, 1296, and $1120cm^{-1}$ represent C-OH, $R-CH_3$, $R_2-CH_2$, -C=O, C-H, C=C-H, and Si-O-Si absorption, respectively. The FTIR absorption peak at $1715cm^{-1}$ representing the ester -C=O stretching vibration for silica spheres stored for 20 days was increased compared with the spheres without aging. The UV-visible absorption peaks were at 4.51 eV (275 nm) and 3.91 eV (317 nm). There were two luminescence peaks at 2.51 eV (495 nm) and 2.25 eV (550 nm). The emission at 2.51 eV was dominant peak when the excitation energy was higher than 2.58 eV, and emission at 2.25 eV became dominant peak when the excitation energy was lower than 2.58 eV.

• 한국세라믹학회지
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• 제34권12호
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• pp.1275-1281
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• 1997

ZnO varistors containing 5.0 at% Co3O4 and Pr6O11, ranging from 0.1 to 1.0 at%, were sintered at 130$0^{\circ}C$ and 135$0^{\circ}C$. The I-V characteristics and nonlinear coefficients of the specimens were investigated with respect to Pr addition and sintering temperature. In general the specimens sintered at 130$0^{\circ}C$ showed better varistor characteristic than those fired at 135$0^{\circ}C$, which seemed to be related with the liquid phase formation during sintering. The barrier heights obtained from C-V relations, 0.29-1.36 eV, were different from those acquired using resistivity-temperature plots measured at low voltage per grain boundary. Therefore the estimation of potential barrier heights using C-V relations is better suited for the specimens prepared in this study. The carrier densities obtained using C-V relations were ~1018 cm-3.

• 한국전기전자재료학회논문지
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• 제18권10호
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• pp.877-882
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• 2005

In order to fabricate a high breakdown SiC-SBD (Schottky barrier diode), we investigate an effect on metal guard ring (MGR) in breakdown characteristics of the SiC-SBD. The breakdown characteristics of MGR-type SiC-SBD is significantly dependent on both the guard ring metal and the alloying time of guard ring metal. The breakdown characteristics of MGR-type SiC-SBDs are essentially improved as the alloying time of guard ring metal is increased. The SiC-SBD without MGR shows less than 200 V breakdown voltage, while the SiC-SBD with Al MGR shows approximately 700 V breakdown voltage. The improvement in breakdown characteristics is attributed to the field edge termination effect by the MGR, which is similar to an implanted guard ring-type SiC-SBD. There are two breakdown origins in the MGR-type SiC-SBD. One is due to a crystal defects, such as micropipes and stacking faults, in the Epi-layers and the SiC substrate, and occurs at a lower electric field. The other is due to the destruction of guard ring metal, which occurs at a higher electric field. The demolition of guard ring metal is due to the electric field concentration at an edge of Schottky contact metal.

• 자동차안전학회지
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• 제14권3호
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• pp.48-59
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• 2022

A V2X system can be a candidate as a means to increase the stability of autonomous vehicles. In particular, in order to implement a Level 4 or higher autonomous driving system, the application of the V2X system is essential. Wireless communication technologies applicable to the V2X system include WAVE and C-V2X. Currently, the V2X service most used by autonomous driving systems is a service that provides signal phase and timing information and since real-time characteristic is a very important, verification of this service must be done. In this paper, we measured the time delay characteristics for providing signal phase and timing information using WAVE and LTE communication, and proposed a TOD-based signal phase and timing information generation method without using V2X communication system. To analyze the time delay characteristics, RTT (Round Trip Time) was measured as a result of the measurement. Average RTT using WAVE communication was 5.84ms and was 104.15ms with LTE communication. As a result of measuring the error between the signal phase and timing information generated based on TOD and the actual traffic light state, it was measured to be -0.284~3.784sec.

• 한국반도체및디스플레이장비학회:학술대회논문집
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• 한국반도체및디스플레이장비학회 2006년도 추계학술대회 발표 논문집
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• pp.10-13
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• 2006

This paper describes on the fabrication and characteristics of a 3C-SiC (Silicon Carbide) micro pressure sensor for harsh environment applications. The implemented micro pressure sensor used 3C-SiC thin-films heteroepitaxially grown on SOI (Si-on-insulator) structures. This sensor takes advantages of the good mechanical properties of Si as diaphragms fabricated by D-RIE technology and temperature properties of 3C-SiC piezoresistors. The fabricated pressure sensors were tasted at temperature up to $250^{\circ}C$ and indicated a sensitivity of 0.46 mV/V*bar at room temperature and 0.28 mV/V*bar at $250^{\circ}C$. The fabricated 3C-Sic/SOI pressure sensor presents a high-sensitivity and excel lent temperature stability.

• 한국표면공학회지
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• 제39권3호
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• pp.87-92
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• 2006

The characteristic of interface layer and the effect of bias voltage on the microstructure of c-BN films were studied in the microwave plasma hot filament C.V.D process. c-BN films were deposited on a high speed steel(SKH-51) substrate by hot filament CVD technique assisted with a microwave plasma to develop a high performance of resistance coating tool. c-BN films were obtained at a gas pressure of 20 Torr, vias voltage of 300 V and substrate temperature of $800^{\circ}C$ in $B_2H_6-NH_3-H_2$ gas system. It was found that a thin layer of hexagonal boron nitride(h-BN) phase exists at the interface between c-BN layer and substrate.