1 |
Y. Nakajima, A. Kojima and N. Koshida, 'A solid-state light-emitting device based on excitation of ballistic electrons generated in nanocrystalline porous poly-silicon films,' Jpn J. Appl. Phys, Vol. 41, pp. 2707-2709, 2002
DOI
|
2 |
M. Okuda, S. Matsutani, A. Asai, A. Yamano, K. Hatanaka, T. Hara, and T. Nakagiri, 'Electron Trajectory Analysis of Surface Conduction Electron Emitter Displays (SEDs),' SID Symposium Digest 29, p. 185, California, USA, 1998
DOI
|
3 |
Kusunoki. T., and Suzuki. M., 'Increasing emission current from MIM cathodes by using an Ir-Pt-Au multilayer top electrode,' Electron Devices, IEEE Transactions on,. 47 , pp. 1667-1672, 2000
DOI
ScienceOn
|
4 |
Seong-Chan Bae, Sang-Kug Han, and Sie-Young Choi,'Oxide-thickness effects on the field-emission characteristics of an oxidized porous poly-silicon field emitter,' Journal of the Korean Physical Society, Vol. 43, pp. 1053-1055, December 2003
|
5 |
S. K. Han, S. I. Kwon, S. C. Bae, and S. Y. Choi, 'Effects of the thermal annealing on the field emission characteristics of an oxidized porous poly-silicon field emitter,' IDW'04, pp. 1233-1236, Niigata, Japan, 2004
|
6 |
C. A. Spindt, I. Brodie, L. Humphrey, and E. R. Westerberg, 'Physical properties of thin-film field emission cathodes with molybdenum cones,' J. Appl. Phys, Vol. 47, pp. 5248-5263, 1976
DOI
ScienceOn
|
7 |
T. Komoda, Y. Honda, T. Hatai, Y. Watabe, T. Ichiha ra, K Aizawa, Y. Kondo, and N. Koshida, 'Fabrication of Ballistic Electron Surface-Emitting Display on Glass Substrate,' SID'01, Technical Digest, p. 428, 2000
|
8 |
N. Negishi, T. Chuman, S. Iwasaki, T. Yoshikawa, H. Ito, and K. gasawara, 'High Efficiency Electron-Emission in Pt/SiOx/Si/Al Structure,' J. Appl. Phys., Vol. 36, p. 939, 1997
DOI
ScienceOn
|
9 |
S. Uemura, T. Nagasato, J. Yotani, T. H. Kurachi, and H. Yamada, 'Large Size FED with Carbon Nanotube Emitter,'SID'02 Digest, p. 1132, Sanjose, USA, 2002
DOI
|